Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

A realistic coronary artery phantom for particle image velocimetry

Myocardial infarction results from the rupture of an atherosclerotic plaque, which occurs in response to both mechanical stress and inflammatory processes. In order experimentally observe flow into atherosclerotic coronary artery morphologies, a novel technique for molding realistic compliant phantom featuring injection-molded inclusions and multiple layers has been developed. This transparent phantom allows for particle image velocimetry (PIV) flow analysis and can supply experimental data to validate computational fluid dynamics algorithms and hypothesis.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Nonequilibrium dynamics of quantum spin glass in an AC magnetic field

The ageing effect is studied analytically in a disordered quantum system interacting with its surroundings and subjected to an external ac magnetic field. Energy dissipation is due to the interaction of the system with a set of independent harmonic oscillators, imitating a quantum thermal bath. Dynamic equations for the autocorrelation function and linear-response function are derived using the method of closed-path integrals. The effect of an external field is studied on the correlation function and response in the spin-glass and paramagnetic phases. Both functions are found to depend on the spin interaction strength.     

Effect of γ radiation from <Superscript>60</Superscript>Co on the formation of metal contacts to GaAs (Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As) structures

The properties of nonrectifying AuGe/GaAs (Al_0.4Ga_0.6As) contacts exposed to heat treatment, ⁶⁰Co γ radiation, and γ radiation combined with the application of an electrical bias are studied. A correlation between the type of interfacial interaction in the contacts and their resistance is found. Results obtained are explained in terms of a diffusion model with a movable boundary of the metal layer.     

New method for calculating the potential energy of deformed nuclei within the liquid-drop model

The method that we previously developed for going over from double volume integrals to double surface integrals in calculating the Coulomb energy of nuclei that have a sharp surface is generalized to the case of nuclei where the range of nuclear forces is finite and where the nuclear surface is diffuse. New formulas for calculating the Coulomb and the nuclear energy of deformed nuclei are obtained within this approach. For a spherically symmetric nucleus, in which case there is an analytic solution to the problem in question, the results are compared with those that are quoted in the literature, and it is shown that the respective results coincide identically. A differential formulation of the method developed previously by Krappe, Nix, and Sierk for going over from double volume integrals to double surface integrals is proposed here on the basis of the present approach.     

Theoretical analysis of the formation of a layered ice structure at the surface of a plate placed in a flow of a supercooled water aerosol

The motion of the front of crystallization and the growth of a film at the surface of a plate are analyzed in the case of a laminar and in the case of a turbulent flow mode. Conditions are determined under which there occurs a transition from a matt inhomogeneous structure to a transparent homogeneous structure of ice. It is shown that, for a film to be steadily preserved at the plate surface, the film thickness must be larger than a critical equilibrium-thickness value h _b.c, in which case a transparent homogeneous structure of ice is formed. Otherwise, the film at the plate surface is unstable and disappears in the course of time. The icing of aircrafts is the most important application of the results obtained in this study.     

TSL and EPR studies of SrBPO5 doped with CeO2and co-doped with CeO2 and Sm2O3

Thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) investigations were carried out on gamma irradiated SrBPO₅ samples doped with CeO₂ and co-doped with CeO₂ and Sm₂O₃. On gamma-irradiation at room temperature, BO₃ ^2–, O₂ ^– and O^– radicals were produced. It was seen that the O^– radical ion disappeared in the sample annealed at 500 K. It is proposed that the recombination between trapped electrons and O^– radical ions results in transfer of recombination energy to the impurity centre Ce³⁺ resulting in TSL glow peak at 485 K. In the case of co-doped samples energy transfer occurs between Ce³⁺ to Sm³⁺ resulting in increase in the intensity of glow peak at 485 K.The authors are grateful to Dr. V. K. Manchanda, Head, Radiochemistry Division, BARC for his keen interest and encouragement during the course of this work.