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941.
942.
The action of illumination on the conducting and dielectric properties of lead magnoniobate was investigated. The photostimulated currents were examined and the spectral dependence of photoconductivity in the region of diffuse phase transition was obtained. It was found that the illumination affects the dielectric properties and that its action is memorized at temperatures below room temperature. The role of defect states in the formation of relaxor properties is discussed on the basis of the obtained data.  相似文献   
943.
The article provides a refinement for the volume-corrected Laplace-Metropolis estimator of the marginal likelihood of DiCiccioet al. The correction volume of probability α in DiCiccioet al. is fixed and suggested to take the value α=0.05. In this article α is selected based on an asymptotic analysis to minimize the mean square relative error (MSRE). This optimal choice of α is shown to be invariant under linear transformations. The invariance property leads to easy implementation for multivariate problems. An implementation procedure is provided for practical use. A simulation study and a real data example are presented.  相似文献   
944.
We report an experimental study on the relationship between the optical activity of Ge-oxygen deficient centers and dynamic properties and conformational heterogeneity of vitreous matrix in silica. We focus our attention on the absorption band at ∼5.2 eV (B) and on the two related emissions at ∼4.2 eV (αE) and at ∼3.1 eV (β). From the temperature dependence of B band we estimate a mean energy value of 26 meV for local vibrational modes coupled to the electronic transition, suggesting that the chromophore and its surrounding have access to low frequency dynamics. From the thermal behavior of the two emissions we distinguish the two competitive relaxation processes from the first singlet excited state S1: the radiative one, giving rise the αE band, and the thermally activated intersystem-crossing process between S1 and the triplet state T1, originating the β band. The intersystem-crossing rate increases on increasing the temperature, determining an opposite thermal behavior of the intensity of the two emissions. However, this temperature dependence cannot be rationalized by a simple Arrhenius law and the αE decay kinetics at high temperatures do not follow a single exponential law, suggesting a complex landscape of configurational energies of the process.  相似文献   
945.
Mechanics of Composite Materials - A three-dimensional ply-level modeling of multiple matrix cracking near an open hole in a quasi-isotropic composite laminate was performed. A mesh-independent...  相似文献   
946.
A method for calculating the potential energy of a dinuclear system evolving along the charge-asymmetry coordinate is analyzed. It is shown that the shape of the potential is determined primarily by the dependence of the proton separation energy on the mass and the charge number of nuclei that form the dinuclear system and by the concerted effect of the Coulomb fields of these nuclei on the single-particle motion of constituent nucleons.  相似文献   
947.
ABA block copolymers of methyl methacrylate and methylphenylsilane were synthesized with a methodology based on atom transfer radical polymerization (ATRP). The reaction of samples of α,ω‐dihalopoly(methylphenylsilane) with 2‐hydroxyethyl‐2‐methyl‐2‐bromoproprionate gave suitable macroinitiators for the ATRP of methyl methacrylate. The latter procedure was carried out at 95 °C in a xylene solution with CuBr and 2,2‐bipyridine as the initiating system. The rate of the polymerization was first‐order with respect to monomer conversion. The block copolymers were characterized with 1H NMR and 13C NMR spectroscopy and size exclusion chromatography, and differential scanning calorimetry was used to obtain preliminary evidence of phase separation in the copolymer products. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 30–40, 2003  相似文献   
948.
949.
The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO2 has been investigated. Silicon precipitation in implanted samples takes place in a time scale of few minutes at 1100°C. For longer annealing at the same temperature, the PL intensity of the Si nanocrystals increases and eventually reaches saturation, while it correlates inversely with the amount of Si dangling bonds at the Si–SiO2 interface (Pb centers), as measured by electron spin resonance. This combined behavior is independent on the silica matrix properties, implantation profiles and annealing atmosphere and duration. The observation that the light emission enhancement is directly related to the annealing of Pb centers is confirmed by treatment in forming gas. This mild hydrogenation at much lower temperature (450°C) leads to a complete passivation of the Pb defects, increasing at the same time the PL yield and the lifetime.  相似文献   
950.
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