Synthesis of poly(arylene disulfide)-vermiculite nanocomposites via in situ ring-opening reaction of cyclic oligomers

An exfoliated poly(4,4^′-oxybis(benzene)disulfide) (POBDS)/vermiculite (VMT) nanocomposite was prepared by using cyclo(4,4^′-oxybis(benzene)disulfide) (COBDS) oligomers and cetyltrimethyl ammonium bromide exchanged VMT. The POBDS/VMT nanocomposites were fabricated in two steps. First, the COBDS oligomers were used to swell and exfoliate organo VMT to afford COBDS-VMT nanocomposite precursor. Subsequently, the exfoliated POBDS-VMT nanocomposite can be made via in situ and instant melt ring-opening polymerization of the COBDS-VMT nanocomposite precursor. High molecular weight POBDS polymer can be formed in a few minutes. The nano scale dispersion of VMT layers within POBDS polymer was confirmed by both the X-ray diffraction patterns and TEM examinations. This methodology provides a potential approach to synthesize high performance polymer nanocomposite.     

A comparison of a theoretical model for quasi-statically and dynamically induced environmental vibration from trains with measurements

This paper presents comparisons between a theoretical ground vibration model and measured data at three sites. The model, which is briefly outlined here, encompasses both the quasi-static and dynamic mechanisms of excitation. The vertical dynamics of a number of vehicles travelling at a constant speed on an infinite track are coupled to a semi-analytical model for a three-dimensional layered ground. This model is also used to demonstrate the roles of the two components of vibration at different frequencies and for train speeds below and above the lowest ground wave speed. It is found that, in most practical cases, the dynamic component gives rise to the higher level of vibration.     

The structure of multi-electrode-pair pulse laser and discharge pulse time selection

Applying multi-electrode-pair pulse TEA CO₂ laser to one optical resonance cavity will have several advantages over traditional method, including higher gain, shorter pulse discharge time interval, and in particular, continuous adjustable time interval of multi-pulse laser output can be achieved without high vacuum condition. To improve laser's working stabilization, we proposed new approaches to optimize laser structure design and discharge pulse time interval selection.     

Active control and a simple estimation method for the onset of Rayleigh-Bénard convection in temperature-dependent-viscosity liquids

Active feedback control for the onset of Rayleigh-Bénard Convection in temperature-dependent-viscosity liquids is investigated. In this paper, three major problems are addressed: (1) The results of Tang-Bau control are improved by considering the effects of temperature-dependent viscosity; (2) A more efficient two-plate control strategy is presented. A phenomenon of coalescence of the unstable modes is observed as the controller gain is large enough; (3) A simple way to estimate the critical Rayleigh number under the effects of temperature-dependent viscosity is described. Numerical results show that the effects of temperature-dependent viscosity on the critical Rayleigh number should be taken into account in some cases and the onset of Rayleigh-Bénard convection can be effectively delayed or advanced by the active feedback control strategies studied here.     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Imprinting by hot embossing in polymer substrates using a template of silica glass surface-structured by the ablation of LIBWE method

Laser-induced backside wet etching (LIBWE) of silica glass plates was performed to fabricate an imprinting template for hot embossing in polymer substrates such as polystyrene and silicone resin. Well-defined inverse surface-micropatterns of gratings and grid arrays on the substrates were produced by the hot embossing using a surface-structured silica glass as the template. These results indicate that the LIBWE method allows us to generate robust glass molding tools that exhibit the inverse shapes of the intended microstructures. PACS 52.38.Mf; 68.47.Mn; 81.05.Kf; 81.05.Lg; 83.50.Uv     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.     

Effect of transverse object position on the reconstructed image of an aperture-limited in-line hologram

It is experimentally demonstrated that the image resolution from an in-line Fraunhofer hologram degrades appreciably when the centre of the diffraction pattern from a 5-bar resolution target is located asymmetrically in the hologram aperture. This effect is confirmed and analysed using calculated and experimentally measured images from holograms of a one-dimensional wire. Increasing asymmetry results in an increasing error in the measured linewidth, and a reduction of image resolution. A simple model based on average fringe contrast is used to predict this decrease in resolution with transverse object position.     

First observation of yrast band in odd-odd162Lu

High spin states of the odd-odd¹⁶²Lu nucleus have been studied via¹⁴⁷Sm(¹⁹F,4nγ)¹⁶²Lu reaction at 95 MeV beam energy. Level scheme for yrast band based onπ[h_11/2 v[i_13/2] quasiparticle configuration was established up to I ^π = (23^?) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in¹⁶²Lu is larger than that in the¹⁶⁰Tm nucleus.     

用拓扑指数S_i研究碳氢化合物的沸点(Ⅲ)

定义了拓扑指数Ｓｉ（ｉ＝１，２，３，４），并选取包含双、三键、环及苯环的碳氢化合物为研究对象，计算了这些化合物的拓扑指数Ｓｉ，同时用Ｓｉ相关了它们的沸点．结果较文献值有所改善．并从Ｓｉ中筛选出了Ｓ