镧掺杂水滑石材料的热分解过程研究

采用共沉淀法制备了系列La掺杂改性的含Cu类水滑石,高温焙烧得到其衍生混合氧化物材料,并用XRD,TG-DSC,FT-IR等对材料进行表征.结果表明,前驱物XRD图谱呈典型的水滑石衍射特征且颗粒结晶良好;经800℃焙烧后,掺杂La2O3含量为5.1%的样品仅有Mg1-xFexO晶相出现,说明La的掺杂提高了材料的高温稳定性,混合氧化物中的Cu离子呈高分散状态.     

35Cr25Ni12奥氏体耐热钢中碳化物的电子显微分析

应用扫描电镜（SEM）和透射电镜（TEM）研究了长期使用前后的35Cr25Ni12奥氏体耐热钢中的碳化物演变行为；该钢固溶时效后的组织由初晶奥氏体及M23C6共晶碳化物组成，奥氏体基体中析出了二次M23C6，二次碳化物总是与基体保持立方－立方取向关系；长期使用（3、5年）后，奥氏体中析出的二次碳化物量明显增加，部分M23C6已转变为M6C，M6C与奥氏体基体以及二次碳化物M23C6保持[001]M6C//[221]A//[221]M23C6孪晶取向关系。     

分光光度法测定环境水样中的汞

研究了氯磺酚偶氮硫代若丹宁 ( HSCT)与汞的显色反应 ,在醋酸介质中 ,HSCT与汞反应生成 2∶ 1稳定络合物 ,λmax=5 4 5 nm,ε=5 .66× 10 4 L· mol-1· cm-1。汞含量在 0— 2 .5μg/ m L范围内符合比耳定律 ,本方法可用于水样中痕量汞含量的测定     

Effect of Ultrashort Pulsed Laser and X-Ray Irradiation on Au+ -Doped Glass

Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles.     

基于全息聚焦机理空间光孤子的相互作用势函数

利用变分法讨论了反向传输的基于全息聚焦机理空间光孤子的相互作用,导出了相干和非相 干相互作用的势函数.当孤子间的相对相位不随传输距离变化或相对相位对传输距离的偏导 数与孤子间距无关时,相干和非相干相互作用势函数都与孤子间的相对相位无关,出现孤子间 反常相互作用,这正好是近期文献的结果. 关键词： 空间光孤子 相互作用 变分原理     

Accurate Gain Flattening Filters Manufactured by Optical Compensation Monitoring Method

GFFs with less than 0.4 dB peak-to-peak error functions are routinely fabricated using commercially available coating machines by utilizing the natural error compensation mechanism of wavelength variable turning point optical monitoring method.     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Vanishing Shear Viscosity Limit in the Magnetohydrodynamic Equations

We study an initial boundary value problem for the equations of plane magnetohydrodynamic compressible flows, and prove that as the shear viscosity goes to zero, global weak solutions converge to a solution of the original equations with zero shear viscosity. As a by-product, this paper improves the related results obtained by Frid and Shelukhin for the case when the magnetic effect is neglected. Supported by NSFC (Grant No. 10301014, 10225105) and the National Basic Research Program (Grant No. 2005CB321700) of China.     

CRYSTAL AND MOLECULAR STRUCTURE OF A NOVEL Au Ag SUPRACLUSTER COMPOUND [Au_13Ag_12(μ-Br)_4(μ_3-Br)_2(Ph_3P)_10-

<正> [Au13Ag12(μ-Br)1(μ3-Br)2 (Ph3P)10Br2] Br, monoclinic. space group C2/m, a = 36. 496(17). b=16. 878(7), c-=19. 772(9) A , β=99. 87(5)°, V=11998. 9 A3.Z=2. The final R(Rw) is 0. 097(0. 109) for 3779 reflections with I>3σ(I). The structure can he considered as two icosahedral cluster units (AurAg6) sharing one vertex and linked hy six bromine atoms. The Au - Au, Au - Ag. and Ag-Ag distances fall in the ranges of 2. 69-2. 96. 2. 84-3. 02. and 2. 92-3. 26 A, respectively.