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951.
952.
利用直流磁控溅射技术在玻璃衬底上沉积了TiO2薄膜,并对其进行了Co离子注入,最后在真空中500 ℃退火50 min,得到系列薄膜样品. 利用剥离-分散方法制备了薄膜的透射电镜样品,并用扫描电镜(SEM)、X射线能量散射谱(EDX)和高分辨透射电镜(HRTEM)对样品做了近似原位观察,研究了薄膜样品中不同Co离子注入深度的成分分布和显微结构. 结果表明,薄膜呈锐钛矿结构,Co元素主要分布在薄膜表层,Co离子的注入使TiO2薄膜的晶粒被部分破坏,并形成CoO,而5
关键词:
2薄膜')" href="#">Co注入TiO2薄膜
电镜原位观察
室温铁磁性 相似文献
953.
Lyapunov exponent calculation of a two-degree-of-freedom vibro-impact system with symmetrical rigid stops 下载免费PDF全文
A two-degree-of-freedom vibro-impact system having symmetrical rigid stops and subjected to periodic excitation is investigated in this paper. By introducing local maps between different stages of motion in the whole impact process, the Poincar'e map of the system is constructed. Using the Poincar'e map and the Gram-Schmidt orthonormalization, a method of calculating the spectrum of Lyapunov exponents of the above vibro-impact system is presented. Then the phase portraits of periodic and chaotic attractors for the system and the corresponding convergence diagrams of the spectrum of Lyapunov exponents are given out through the numerical simulations. To further identify the validity of the aforementioned computation method, the bifurcation diagram of the system with respect to the bifurcation parameter and the corresponding largest Lyapunov exponents are shown. 相似文献
954.
Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations 下载免费PDF全文
By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions. 相似文献
955.
Electrospun cerium nitrate/polymer composite fibres: synthesis, characterization and fibre-division model 下载免费PDF全文
Cerium (Ⅲ) nitrate/poly(vinylpyrrolidone) (Ce(NO3)3/PVP) composite fibres have been prepared by electrospinning. After calcining the composite fibres in air at 500℃,CeO2 nanowires were obtained. The characterizations of the as-spun composite fibres and resultant nanowires have been carried out by a scanning electron microscope (SEM),an infrared spectrometer,an x-ray diffractometer and a fluorescence spectrophotometer. Interestingly,some unusual ribbon-like or twin fibres were observed besides the common fibres with circular or elliptic cross sections. We developed a fibre-division model resulting from Coulomb repulsion and solvent vaporization to interpret the formation of the ribbons or twin fibres,which has been confirmed by the SEM studies. Our results also indicate that the formation of the ribbons or twin fibres is less dependent on operation voltage and work distance. 相似文献
956.
Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study 下载免费PDF全文
The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene. 相似文献
957.
Semiconductor optical amplifier used as regenerator for degraded differential phase-shift keying signals 下载免费PDF全文
Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication systems.This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals.The key regeneration mechanism is theoretically analysed.The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Gbit/s differential phase-shift keying 1080-km transmission systems.The results show that regeneration effects are very well.Bit error rate is less than 10 12 with the regenerator. 相似文献
958.
We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile. 相似文献
959.
960.
平行排列液晶器件的波前调制特性 总被引:1,自引:17,他引:1
设计了一种新型的平行排列液晶相位调制器(LC PM),可在纯相位的模式下进行相位调制,研究了液晶相位调制器的光学特性,理论上给予了分析.对畸变波前进行了调制,在1 cm2的校正面积上,调制后的准确度PV(peak to valley)值接近λ/15(λ=0.6328 μm),RMS(Root Means Square)可达到λ/100,斯特列尔比SR (Strehl Ratio)达到0.989.改变了传统的扭曲向列液晶器件难于进行纯相位调制和得到高准确度调制的缺点,达到了理想的效果. 相似文献