重离子治癌的磁扫描照射野形成法

在论述重离子治癌照射的基本思想及其特点的基础上,着重对磁扫描照射野形成的两种技术路线——点扫描和栅扫描的优缺点进行了分析阐述.初步给出了 HIRFL上的重离子治癌终端磁扫描相关参数. The basic principle and characteristic of irradiation in heavy ion radiotherapy are introduced. Based on the basic principle and characteristic of irradiation in heavy ion radiotherapy, two magnetic scan methods for creating uniform irradiation field--the spot scan and the raster scan, are compared briefly. The parameter requests to the magnetic scanning system of the heavy ion radiotherapy facility planned in IMP(Institute of Modern Physics) are presented.     

北京谱仪Ⅱ带电径迹测量误差矩阵的修正

研究了北京谱仪(BES)Ⅱ带电径迹测量误差矩阵的修正,使运动学拟合TELESIS方法在BESⅡ物理数据分析中得到应用.1)在BESⅡ数据重建程序中,加入了适当的MDC重建单丝分辨率(250μm)和Q修正.2)在TELESIS程序中,放入了BESⅡ有效物质量对BESⅡ误差矩阵进行多次库仑散射和dE/dX能损效应的修正.3)在此基础上,通过J/ψ→μ⁺μ^－的数据样本分析,完成了BESⅡ24×10⁶J/ψ事例RUN-by-RUN的误差矩阵刻度,同时对BESⅡMC数据也作了相应的刻度.经上述误差矩阵修正后,BESⅡ的TELESIS可以较好地满足BESⅡ数据分析工作的要求.     

Statistical Properties of a Ring Laser with Injected Signal and Backscattering

The Statistical Properties of a homogeneously broadened ring laser with an injected signal are investigated and the normalized two-mode intensity auto-and cross-correlation functions are calculated by a full saturation laser theory with backscattering.The theoretical predictions are in good agreement with the experimental measurements.Further inverstigation reveals that the backscattering can reduce the fluctuations in the system while the full saturation effect plays a major role when the laser is operated above threshold.It is also quite important to notice that the injected signal can drive the weak mode from incoherent light to coherent light.     

The Stability of Icosahedral Cluster and the Range of Interaction Potential

The relation between the stability of icosahedral clusters and the range of interaction potential is discussed.We found that the stability of icosahedral clusters nay decrease with decreasing range of interaction potential. A simple formula about the critical number of icosahedral clusters and the range of interaction potential (M1/3c = A1 A2r2eff)was proposed. The calculation of the stability of icosahedral fullerence molecular clusters shows that our idea is right.``     

Theoretical kinetic study on the decomposition of 1,5‐diaminotetrazole

1,5‐Daminotetrazole (DAT) is of much interest because of the practical significance and the diversity of characteristics. The study on the decomposition pathway and the kinetics of DAT has been performed based on the quantum chemistry theory. The minimum energy path (MEP) calculation has shown that NH₂N₃ and NH₂CN are the initially detected products of DAT. And the structures of reactant, products and transition state were optimized with MP2 methods using 6‐311G** basis sets, and the energies were refined using CCSD(T)/6‐311G** levels of theory. The calculated rate constants were obtained using the conventional transition‐state theory (TST) and the canonical variational transition‐state theory (CVT) methods. The calculation results indicated that the energy barrier of decomposition reaction is 47.98 kcal mol^?1 and the variational effect is small. In addition, the rate constants and the Arrhenius experience formula of DAT decomposition have been obtained between 200 and 2500 K temperature regions. The fitted three‐parameter expressions calculated using the TST and CVT methods are (TST) and (CVT). This work may provide the theoretical support for further experimental synthesis and testing. Copyright © 2015 John Wiley & Sons, Ltd.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善

在铜(Cu)和非晶铟镓锌氧化物(a-IGZO)之间插入30 nm厚的钼(Mo)接触层, 制备了具有Cu-Mo源漏电极的a-IGZO薄膜晶体管(TFT). Mo接触层不仅能够抑制Cu与a-IGZO有源层之间的扩散, 而且提高了Cu电极与玻璃基底以及栅极绝缘层的结合强度. 制备的Cu-Mo结构TFT与纯Cu 结构TFT相比, 具有较高的迁移率(～9.26 cm²·V^-1·s^-1)、更短的电流传输长度(～0.2 μm)、更低的接触电阻(～1072 Ω)和有效接触电阻率(～1×10^-4Ω·cm²), 能够满足TFT 阵列高导互联的要求.     

偏振对飞秒激光辐照LiF晶体的影响

飞秒激光聚焦到LiF晶体内部, 晶体的加工形貌随偏振改变. 实验表明, 偏振方向平行于<110> 晶向时, 加工起点到表面的距离是<100>偏振下的1.08 倍; 而<110>偏振下加工终点到表面的距离是<100> 偏振下的1.01 倍. 为了解释加工形貌的偏振依赖, 建立了逆韧致辐射、雪崩电离和无辐射跃迁的模型, 首先, 价带电子通过强场电离和雪崩电离, 从激光中吸收能量跃迁到导带, 该过程用电子密度演化方程和傍轴非线性薛定谔方程描述, 求解方程得到导带电子密度; 其次, 导带电子通过无辐射跃迁过程释放能量给晶格, 由能量守恒计算出晶格温度沿激光传播方向的分布; 最后, 晶格温度超过熔点以上的区域被加工. 模拟结果显示, <110>偏振下加工起点到表面的距离是<100> 偏振下的1.03倍, 而<110>偏振下加工终点到表面的距离是<100>偏振下的0.981 倍, 与实验结果基本一致. 虽然Z扫描技术测量的非线性折射率随偏振方向变化, 但是非线性折射率的变化趋势与实验结果相反. 模拟和实验证明逆韧致辐射导致加工形貌随偏振变化.