Recursive partition and amalgamation with the exponential family: Theory and applications

The theory of tree-growing (RECPAM approach) is developed for outcome variables which are distributed as the canonical exponential family. The general RECPAM approach (consisting of three steps: recursive partition, pruning and amalgamation), is reviewed. This is seen as constructing a partition with maximal information content about a parameter to be predicted, followed by simplification by the elimination of ‘negligible’ information. The measure of information is defined for an exponential family outcome as a deviance difference, and appropriate modifications of pruning and amalgamation rules are discussed. It is further shown how the proposed approach makes it possible to develop tree-growing for situations usually treated by generalized linear models (GLIM). In particular, Poisson and logistic regression can be tree-structured. Moreover, censored survival data can be treated, as in GLIM, by observing a formal equivalence of the likelihood under random censoring and an appropriate Poisson model. Three examples are given of application to Poisson, binary and censored survival data.     

关于(?)-拟微分核的连续性

Supposa that f(x) is a quasidifferentiable function, defined on S(?)R~n where S is an open set, with a -equivalent bounded quasidifferential subfam ily. Lenma I     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

980 nm激发下Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的上转换发光特性

通过固相反应法制备了Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的样品,并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现,在可见光范围内有3个强的发光带,一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带,分别对应于Er3+离子的以下辐射跃迁:4F9/2→4I15/2、4S3/2→4I15/2、2H11/2→4I15/2.其中又以Er3+离子的4F9/2→4I15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析,发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测,发现ZrO2主要以立方相为主,并且计算得到了这种立方结构的晶格常数.Al2O3固溶于ZrO2中,Al3+嵌入ZrO2后产生氧空位,导致ZrO2晶体的对称性降低,这种结构变化更有利于提高上转换效率,即上转换发光强度增强.     

The number of limit cycles of cubic Hamiltonian system with perturbation

In this paper, by using qualitative analysis, we investigate the number of limit cycles of perturbed cubic Hamiltonian system with perturbation in the form of (2n+2m) or (2n+2m+1)th degree polynomials . We show that the perturbed systems has at most (n+m) limit cycles, and has at most n limit cycles if m=1. If m=1, n=1 and m=1, n=2, the general conditions for the number of existing limit cycles and the stability of the limit cycles will be established, respectively. Such conditions depend on the coefficients of the perturbed terms. In order to illustrate our results, two numerical examples on the location and stability of the limit cycles are given.     

CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.     

同步辐射讲座 第二讲 同步辐射X射线荧光及其在植物微量元素分析中的应用

比较了同步辐射（SR）X射线荧光（XRF），电子和质子激发的X射线谱，介绍了XRF谱的采集方法及数据处理方法（主要是能谱方法），智能方法的无标样（基本参数法）定量分析原理，以及近期在植物微量元素分析中得到的结果。     

基于LabVIEW的高温超导材料特性测试实验

高温超导体临界特性的测量是近代物理实验中最为经典的实验之一,本文通过使用GM制冷机,利用Lab-VIEW虚拟仪器软件和高性能采集卡,改进了传统的测量高温超导材料临界特性的实验装置.本测试系统不仅可以测量高温超导体在不同温度下的临界电流,还可以测量其失超传播特性.该实验对于学生了解超导体特性和培养严谨的科学作风十分有益.     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

V3+:YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V:YAG晶体,晶体的不同部位呈现两种不同的颜色:浅绿色和黄褐色.通过对比分析不同颜色V:YAG晶体的室温吸收光谱,推断出石墨发热体高温下扩散出来的C可以起到还原作用,提高晶体中V3+tetra离子的浓度,同时诱导了F心的形成.在1300℃下,对不同颜色的V:YAG晶体进行真空退火处理,发现处于八面体格位中的V3+离子在热激发作用下与近邻的四面体格位Al3+离子存在置换反应,由此产生一定浓度的四面体格位V3+离子.同时,F心在退火过程中被完全消除,释放出来的自由电子被高价态的V离子俘获,可以进一步提高晶体中四面体格位V3+离子的浓度.