二级轻气炮发射过程中前冲气体的初步研究

 在二级轻气炮发射过程中,靶室内的残存气体和绕行到弹丸前方的推进气体都有可能对实验结果造成影响。利用石英传感器测量并得到了二级轻气炮高速弹丸发射时前冲气体的压力信号,并计算得到了相应的压力。实验结果表明：二级轻气炮发射时确实存在前冲气体现象,但其压力幅值较小,约为10^-2 GPa量级,不会对高压物理实验的结果造成明显的影响。     

康普顿背散射技术对贮存环电子束诊断及其应用 II贮存环电子束的极化度测量

简单介绍以激光 电子康普顿背散射原理为基础建立的康普顿背散射极化仪,采用它能实时、非破坏性地监测电子束的极化.该项工作可作为上海激光电子γ源(SLEGS)低能γ束应用研究的内容之一.     

溶胶-凝胶生物活性玻璃在SBF中反应的形貌特征

利用溶胶 凝胶生物活性玻璃粉末二次烧结工艺 ,制备了CaO P2 O5 SiO2 系统溶胶 凝胶生物玻璃 ,并以其为原料制备了用于骨修复及骨组织工程支架的块状多孔生物活性材料 .并应用体外实验 (invitro)方法和XRD、SEM、FTIR技术研究了此烧结材料的显微形貌、晶相、和生物活性 .结果表明 ,经 80 0℃烧结 5min后 ,材料有硅磷酸钙 (Ca5(PO4 ) 2 SiO4 ,5CPS)析出 ,在模拟体液 (SBF)中浸泡 ,随着时间的增长 ,玻璃表面最初形成的无定形钙磷化合物矿化成碳酸羟基磷灰石 (HCA)纳米团簇 ,并逐渐相互融合形成HCA覆盖层 ;且HCA只在烧结体的玻璃相 (SG相 )表面生成 ,在 5CPS微晶相表面未发现HCA .     

ClONO2异构化反应和分解反应的理论研究

用B3LYP/6 31+G(d)和MP2 (Full) /6 31+G(d)优化ClONO2 及其分解反应和异构化反应的过渡态和产物的分子结构 .在B3LYP/6 31+G(d)水平上计算了相关分子的振动频率 .ClONO2 的几何结构、振动频率和红外强度与实验测量值符合得很好 .找到了未曾报道的立体异构体 .对这一立体异构体进行了高级别理论方法CCSD(T) /6 311G(d)和QCISD(T) /6 311G(d)的几何结构优化和振动频率计算 ,表明它是一个稳定的立体异构体 .在所研究的几种反应中 ,ClONO2 分解为NO2 +ClO是最容易进行的反应 .而ClONO2 异构为立体异构体的反应是最难进行的反应 .其所需克服的过渡态的能垒为 4 81.5 2kJ/mol,而反应吸收能量为 2 99.85kJ/mol.次难进行的是ClONO2 经TS1到反应中间体M1,再经TS12而分解为ClNO +O2 的反应 .这个反应通道所需克服过渡态的能垒为 4 2 1.5 5kJ/mol,反应吸收能量为 15 7.98kJ/mol.从以上分析可知 ,和ClO +NO2 反应生成ClONO2 比较 ,ClONO2 具有较好的稳定性 .     

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive－photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive－nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive－photovoltaic crystals when the external bias field is absent.     

Magnetic properties of mixed Ising system with random field

A spin-1/2 and spin-3/2 mixed Ising system in a random field is studied by the use of effective-field theory with correlations. The phase diagrams and thermal behaviours of magnetizations are investigated numerically for the honeycomb lattice (z=3) and square lattice (z=4) respectively. The tricritical behaviours for both honeycomb and square lattices, as well as the reentrant behaviour for the square lattice are found.     

脉冲爆震发动机性能分析

本文发展了一种新的脉冲爆震发动机性能分析模型,考虑了流体阻力和油珠直径对爆震波速度、压力及脉冲爆震发动机比冲的影响。性能分析模型计算结果与试验结果比较表明,当进行了两相流和流体阻力影响修正后,两者较好。     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.     

Transient saturation absorption spectroscopy excited near the band gap at high excitation carrier density in GaAs

Transient saturation absorption spectroscopy in GaAs thin films was investigated using femtosecond pump and supercontinuum probe technique at excitation densities higher than 1×10^{19}cm^{-3}. The Coulomb enhancement factor of the electron－hole plasma results in a spectrum hole at the pump wavelength. Two distinct transmission peaks at two sides of the pump wavelength are observed, arising from the bleaching of transitions from the heavy- and light-hole bands to the conduction band. The dynamic process of the transient saturation absorption is fitted using a bi-exponential function. The fast decay process is dominated by the carrier-phonon scattering and the slow process may be attributed to the electron－hole recombination.