丙交酯-乙交酯共聚中的酯交换及共聚物结构和性质研究

以辛酸亚锡为催化剂 ,通过本体开环聚合合成了不同摩尔比的DL 丙交酯 乙交酯 (DL LA GA)共聚物 (PDL LGA) .1 H和1 3C NMR以及DSC结果表明 ,共聚物中GA结构单元的含量略高于按GA投料比计算的结果 ,聚合过程中存在二级酯交换反应 .当聚合温度为 16 0℃时 , GG 序列的平均长度 (lGG)随GA摩尔投料比增大而增长 ,而 LL 序列的平均长度 (lLL)则相反 .研究发现 ,随着GA摩尔投料比降低 , LL 单元的二级酯交换系数 (TⅡ[GLG])下降 ,至GA摩尔投料比达到为 5 0 %时最小 ,而后却逐渐增大 .L LA与GA在同样的条件下聚合 ,TⅡ[GLG]和lGG 都比DL LA与GA聚合的大 .聚合温度升高 ,TⅡ[GLG]增大 ,意味着二级酯交换反应加剧 ,但DL LA GA摩尔投料比较高 (75 2 5 )的共聚物的lGG 值有所下降 ,lLL值变化不大 ,而DL LA GA摩尔投料比较低 (5 0 5 0 )的共聚物的lGG值则变化不大 ,lLL值有所下降 ,说明聚合反应还受共聚单体的投料比和其它因素影响 .升高聚合温度比在较低温度下延长反应时间更有效改变共聚物的链结构 .在一定温度下聚合 ,共聚产物的Tg 随GA摩尔投料比增大而有规律降低和在氯仿中的溶解性下降 ;而DL LA GA摩尔投料比一定时 ,聚合温度对共聚物的Tg 的影响较为复杂 ,这与聚合温度对共聚物的链结构影响较大有关 .     

聚丙烯/石墨导电纳米复合材料的制备与性能

用溶液插层及其与熔体混合相结合的母料熔体混合 (MMM)方法制备了聚丙烯 (PP) 马来酸酐接枝聚丙烯 (gPP) 膨胀石墨 (EG) (gPP EG =3 2wt)导电纳米复合材料 ,其室温逾渗阀值 (c)分别为 6wt%和 8wt % ,明显低于直接熔体混合制得复合材料和PP EG对照材料的c=11wt%和 12wt% .增加gPP含量 (Cg)能提高复合材料的电导率 (σ) ,例如对于MMM法制备的复合材料 ,固定PP gPP =1 1wt时 ,c 降为 7wt% ;保持EG含量 =9wt%时 ,σ在Cg>30wt %后跃升 7个数量级以上 .通过TEM、SEM和OM观察 ,从制备方法、EG和gPP含量影响复合材料形态和微结构的角度 ,分析说明了出现上述差异和现象的原因 .     

稀土类尖晶石SnY2O4的软化学合成与表征

尖晶石化合物主要是以化学式AB_2O_4表示的化合物(A和B分别代表二价和三价的金属阳离子)。随A,B离子的改变,化合物的电和磁性也随之改变。因此,可以通过改变A或B来得到我们所希望的材料。稀土元素具有f电子,使得它有着丰富的光     

锂盐-锍镍试金-等离子质谱法测定黑色页岩中铂族元素

建立锍镍试金-等离子质谱法测定黑色页岩中铂族元素(PGEs)的方法。在不减少称样量的前提下,结合黑色页岩成分特点,调整试金配料,利用硝酸钾的氧化性,解决形成锍扣难的问题;利用四硼酸锂的助融性,使盐酸溶解锍扣后黑色沉淀量大幅度降低,用等离子质谱法测定黑色页岩中铂族元素。PGEs的线性相关系数均不小于0.9995。Pt,Pd,Rh,Ir,Ru的检出限分别为0.30,0.36,0.032,0.028,0.041 ng/g。用该方法测定实际样品,测定值与参考值一致,测定结果的相对标准偏差为1.2%~10.6%(n=10)。该方法满足地质矿产实验室测试质量管理规范(DZ/T 0130-2006)的要求,可用于黑色页岩中铂族元素的测定。     

侧链含氨基的PLGA-(PEGA-SP)_n共聚物的合成与表征

以聚乙二醇(PEG)和N -苄氧羰基 -L- 天冬氨酸酐为原料,通过溶液缩聚法制备了聚(聚乙二醇 -co -L -天冬氨酸)交替预聚物(PEG- ASP) n;进一步以辛酸亚锡为催化剂、(PEG- ASP) n 为共引发剂引发D ,L- LA和GA开环共聚合成了带有侧氨基功能基团的PLGA (PEG- ASP) n 共聚物.用GPC、FT -IR、1 H -NMR、DSC等研究了共聚物的结构和性能.结果表明,共聚物表现为典型的无定形聚合物;(PEG- ASP) n 的含量对共聚物的性能有显著影响,随(PEG- ASP) n 含量增加,共聚物的亲水性增强,玻璃化转变温度(Tg)下降;以Pd(5wt% ) C为催化剂,采用催化加氢方法可完全脱除共聚物侧氨基上的保护基团;脱除侧氨基上的保护基团后,共聚物的分子量和Tg 值均略有增大,亲水性有所提高.     

The improved performance in the ternary bulk heterojunction solar cells

The ternary blend films have been fabricated via adding 4,4’-N,N’-dicarbazole-biphenyl(CBP,a hole transport material widely used in organic light emitting diodes) into the poly(3-hexylthiophene):[6,6]-phenyl C 61-butyric acid methyl ester(P3HT:PCBM).Despite the wide bandgap(3.1 eV) of the CBP,the solar cell utilizing the optimized P3HT:PCBM:CBP blend film showed an increase of 16% in power conversion efficiency and 25% in short-circuit current than the compared standard P3HT:PCBM blend film.This is attributed to the fact that the addition of the CBP could enhance the aggregation of the P3HT chains and thereby reduce the hole-electron recombination at the interface of P3HT and PCBM.We provide a simple,effective way to improve the performance of P3HT based bulk heterojunction solar cells.     

Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

The current slump of different recipes of SiN~ passivated AIGaN/GaN high electron mobility transistors （HEMTs） is investigated. The dc and pulsed current-voltage curves of AIGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNs passivated devices. We analyze the pulsed IDS -- VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases （VGso, VDSO） of （0, 0）, （-6, 0）, （-6, 15） and （0, 15）V. The possible mechanisms are the traps in SiNxpassivation capturing the electrons and the surface states at the SiNx/AIGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.     

Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14cm^2/Vs and near the zero threshold voltage. The results demonstrate that using a proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.     

二硫化钼量子点/还原氧化石墨烯复合材料的制备及其光催化降解有机染料、四环素和Cr（VI）

以钼酸钠、L-半胱氨酸和氧化石墨烯为原料,采用一锅溶剂热还原法制备了二硫化钼量子点/还原氧化石墨烯（MoS₂ QDs/rGO）复合材料,分别以罗丹明B、亚甲基蓝、四环素和Cr（VI）为目标污染物,研究了复合材料的可见光响应光催化降解性能。结果显示,MoS₂ QDs/rGO对两种染料和Cr（VI）的光催化降解率均可达97%以上,对四环素的光催化降解率为69%;循环使用10次,对目标染料的降解率均保持在90%以上。说明MoS₂ QDs/rGO具有良好的催化活性和稳定性。在降解体系中分别加入异丙醇、对苯醌和乙二胺四乙酸二钠捕获剂,结果显示,超氧自由基（?O₂^-）是MoS₂ QDs/rGO光催化反应的主要活性物种。     

Design and test of frequency tuner for a CAEP high power THz free-electron laser

Peking University is developing a 1.3 GHz superconducting accelerating section highpower THz freeelectron laser for the China Academy of Engineering Physics(CAEP). A compact fast/slow tuner has been developed by the Institute of High Energy Physics(IHEP) for the accelerating section to control Lorentz detuning, compensate for beam loading effect, microphonics and liquid helium pressure fluctuations. The tuner design, warm test and cold test of the first prototype are presented, which has a guiding significance for the manufacture of the formal tuner and cryomodule assembly.