三层单负材料结构中电磁波模分析

本文分析了由负介电常数材料和负磁导率材料交替排列组成的一维三层结构中的电磁波模式,包括传播模及波导模.传播模对应于入射的行波模,着重研究了发生共振隧穿时场分布和透射谱随入射角度的变化关系,发现改变结构参数时共振隧穿频率会劈裂成两个,且这两个隧穿模的频率间距随着中间层厚度的减小而逐渐加大.波导模是指在结构两边的半无限真空中以倏逝场形式存在的电磁模式,分析了它的存在条件即色散关系,发现这种模在材料的交界面处会出现较强的局域场. 关键词： 单负材料 共振隧穿 传播模 波导模     

磁石的傅里叶变换红外光谱指纹图谱研究

对不同产地和批次的13个生磁石样品的红外光谱法进行分析,建立磁石的红外光谱指纹图谱,并将炮制品和生品进行分析比较.发现所有生磁石样品指纹图谱的相似度均大于0.97;磁石炮制后相似度和相关系数均降低.傅里叶变换红外光谱指纹图谱可用于商品磁石的分析与品质评价.     

强光电离团簇并行数值模拟

 为研究强激光电离氢原子团簇,在理论上采用1维氢原子团簇的经典粒子动力学模型,结合粒子对(PP)算法及粒子模拟（PIC）方法,采用自行搭建的9节点并行集群系统,利用消息传递接口（MPI)与OpenMP混合编程模型进行了并行数值模拟计算,获得了较为理想的计算加速比。并且引入了弛豫时间参数,有效地处理了粒子间的碰撞过程,在极大简化计算量的同时,保留了物理本质。所得模拟结果与已有的实验结果符合较好,表明该并行计算模型是稳定、可行的。     

透明陶瓷透光性能的影响因素

 研究了影响激光透明陶瓷透光性能的主要因素,讨论了陶瓷内部气孔和杂质颗粒等散射粒子、晶界结构中晶界折射率与晶粒折射率的差异以及晶界表面粗糙度等因素对陶瓷透光性能的影响,并定量分析了激光陶瓷透过率随气孔尺寸、气孔率、晶粒相对晶界折射率以及晶界表面粗糙度的变化关系。结果表明： 陶瓷的透过率随着气孔率的减小而增大,但透过率随气孔尺寸的增大而呈现出周期性振荡,且当气孔尺寸与入射光波长可比拟时,陶瓷的透过率会明显降低;在晶界结构中,晶界的折射率与晶粒的折射率相差越小,陶瓷的透过率就越高;晶界表面粗糙度越大,透过率越低。然而,晶界折射率不同于晶粒折射率,这使得其陶瓷透过率降低的程度比对晶界表面粗糙度的影响明显得多。在陶瓷制备过程中,需要重点排除尺寸与入射波长可比拟的气孔, 以抑制晶界结构中第二相的产生。     

合肥光源托歇克效应损失电子的探测

 束流寿命是衡量储存环性能的重要参数,直接影响着光源的正常运行。对于合肥光源（HLS）,托歇克（Touschek）寿命是影响束流寿命的重要因素。为了研究Touschek寿命,需要探测由于Touschek效应所损失的电子。介绍了束流寿命的概念,说明了Touschek效应的原理和机制,利用蒙特卡罗软件EGSnrc模拟计算了丢失电子与真空壁的相互作用,通过塑料闪烁体探测器和光电倍增管获得了由于Touschek效应丢失的电子所产生的信号,然后将信号经过放大甄别和符合处理后,用计数器测量了计数率。结果表明：由于Touschek效应而成对丢失的电子的确存在,且电子损失率随流强的降低而减小。这为下一步储存环的能量标定工作做好了前期准备。     

Optical parametric chirped pulse amplification based on photonic crystal fibre

A compact two-stage optical parametric chirped pulse amplifier based on photonic crystal fibre is demonstrated.A 1064-nm soliton pulse is obtained in a home-made photonic crystal fibre (PCF) with femtosecond pulse pumping and then amplified to 2 mJ in an Nd:YAG regenerative amplifier.After the amplified pulses pass through the LBO crystal,the 532-nm double-frequency light with an energy of 0.8 mJ and a duration of over 100 ps at 10-Hz repetition rate is generated as a pump source in the following two-stage optical parametric amplification (OPA).The 850-nm chirped signal light gain from the stretcher is 1.5×10 4 in the first-stage OPA while it is 120 in the second-stage OPA.The total signal gain of optical parametric chirped pulse amplification (OPCPA) can reach 1.8×10 6.     

接枝聚合物对小分子的选择性吸附研究

文章应用密度泛函理论研究接枝于壁面的方阱链对二元小分子混合物的选择性吸附特性. 系统的Helmholtz剩余自由能泛函被表示为硬球排斥和方阱吸引两部分贡献之和,分别由硬球链流体状态方程和变阱宽方阱链流体状态方程的简单加权密度近似来进行计算. 用此理论方法,分别考察了接枝聚合物的结构性质,以及不同温度下接枝分子层对二元方阱流体的选择性吸附性能. 结果表明:分子刷厚度随接枝密度线性增长而随温度非线性增加,并且在高温下趋于饱和;在较低温度下,接枝聚合物刷能表现出很好的选择性吸附能力,当聚合物刷被加热到高于饱和温度时,该能力将大幅度地减弱. 关键词： 密度泛函理论 接枝聚合物 选择性吸附 方阱链     

分数阶系统有限时间稳定性理论及分数阶超混沌Lorenz系统有限时间同步

研究了分数阶系统有限时间稳定性理论及分数阶混沌系统的同步问题.根据分数阶微分性质及分数阶系统稳定性理论,建立了分数阶系统有限时间稳定性理论并进行了证明.根据该理论设计控制器实现了分数阶超混沌Lorenz系统有限时间同步并运用数值仿真进行了验证. 关键词： 分数阶 超混沌Lorenz系统 稳定 有限时间同步     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.     

Femtosecond electron pulse compression by using the time focusing technique in ultrafast electron diffraction

We present a new model of an electron gun for generating subrelativistic femtosecond (fs) electron pulses. The basic idea is to utilize a dc acceleration stage combined with a time focusing region, the time focusing electrode generates an electron energy chirp for bunching at the target. Without considering the space charge effects, simulations of the electron gun were carried out under the conditions of different dc voltages and various slopes of the voltage added on the time focusing electrode. Tracing and simulating large numbers of photoelectrons through Monte-Carlo and finite difference methods, the electron pulses with 1 ps can be compressed to 55 fs, which will allow significant advances in the field of ultrafast diagnosis.