阵列幅相误差条件下的目标方位估计

本文研究了一种改进的MUSIC法，可在一定阵列幅相误差条件下对多目标实现高分辨方位估计，有效地改善了原算法的参数估计性能，具有稳健性高、适用范围广以及工程实现简单等特点，通过大量的计算机仿真和水池实验表明，该方法具有较好的多目标分辨能力和方位估计精度，工程应用前景良好。     

BEPC中电子云导致的束团横向尺寸增长研究

多束团正电子储存环中可能发生电子云不稳定性. 由于电子云导致的束团横向尺寸增长已经成为提高对撞机对撞亮度的主要限制因素之一. 介绍了在BEPC储存环中, 利用条纹相机直接测量由于电子云导致的束团横向尺寸增长结果, 并与模拟计算进行了比较.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

原子核电荷半径的新公式

结合原子核的电荷半径的实验数据,详细分析了描述原子核电荷半径的经验公式,表明电荷半径的Z^1/3律优于A^1/3律.更细致的考察发现,对于远离β稳定线的核素,电荷半径具有近似线性的同位旋相关性.由此得到的同位旋相关的Z^1/3公式更适合描述原子核的电荷半径.     

关于消失平均振动的一个注记

本文得到了极大算子的几个不等式,并从这些结果推广了函数f∈L_(loc)~1(R,dx)属于VMO(R,dx)的一个必要条件。     

吸积盘的X射线辐射对周围星际物质的离化研究

利用辐射流体力学程序对三倍频纳秒激光与靶物质相互作用进行了模拟研究，得到了可以产生黑体辐射谱分布的激光等离子体X射线辐射靶的最佳厚度；数值模拟研究了黑体谱分布的X射线辐射场对等离子体系统平均离化度分布的影响，它有助于深入理解天体物理中吸积盘对它周围星际物质的离化影响. 关键词： 辐射流体力学 激光等离子体 X射线辐射 吸积盘 离化     

硅中铜与电子辐照缺陷的相互作用

本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物.     

Relativistic Electromagnetic Solitary Wave in a Cylindrical Magnetized Plasma

In the presence of an applied static and uniform magnetic field, a cylindrical Kadomtsev-Petviashivili equation is derived for a relativistic electromagnetic solitary wave propagating in collisionless plasma consisting electrons, positrons, and ions in the case of weak relativistic limit. This equation is solved in a stationary frame to obtain explicit expression for the velocity, amplitude and width of solitons. The amplitude of the solitary wave has a maximum value at a critical αc of the ratio of the ion equilibrium density to the electron one, and it increases as the applied magnetic field becomes larger.     

关于微分熵的一类强偏差定理

利用关于乘积分布密度的相对熵和相对熵率的概念,建立了相依连续型随机变量序列关于参考微分熵的一类强偏差定理,证明中给出了将Laplace变换应用于微分熵强偏差定理的研究的一种途径．