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11.
This paper reports on the first measurement of the yield and energy distributions of sodium atoms in electron-stimulated desorption at T = 160 K from sodium layers adsorbed on tungsten with a gold film atop. The Na atom yield has a resonant pattern with an appearance threshold of 30 eV, which can be attributed to exciton excitation in the Na 2p level. The Na yield is associated with the formation of a semiconducting Na x Au y film at T ∼ 300 K and sodium and gold coverages in excess of one monolayer. Sodium atoms are desorbed through Auger neutralization of Na2+ ions in their reverse motion toward the surface and is limited by the resonant ionization of Na atoms as they pass through the adsorbed layer of Na+ ions. The energy distributions of Na atoms are bell shaped with a maximum at about 0.56 eV.  相似文献   
12.
Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si+ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na+ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f 7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X 0 and, hence, to an increase in the yield of Na+ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na+ yield in electron-stimulated desorption.  相似文献   
13.
Subthreshold photoemission from copper nanoclusters formed on the SiO2 surface has been observed under irradiation of the surface by photons in the 3.1–6.5-eV energy range. The average size of copper nanoclusters on the silicon oxide surface is 250–500 nm. Besides the conventional photoemission from the filled Shockley surface state (SS), strong photoemission has been recorded at incident photon energies of 0.5 eV below the work function of the copper surface. This emission is assumed to be generated in direct electron transitions from the SS state to the unfilled electron surface states formed by the Coulomb image potential, followed by escape from these states into vacuum.  相似文献   
14.
The paper considers particularities in applying Lagrangian variables in problems of hypersonic flow past bodies. It is pointed out that, in problems with intense shock waves, it is advisable to introduce Lagrangian variables as the values of parameters that characterize a particle not on surface t = t 0 (t 0 = const) but on surface t = σ, where σ is the time instant at which the particle meets the surface of discontinuity. Considering examples of two-dimensional flow past two-dimensional and axisymmetric bodies moving with high time-dependent velocity, we show that the passage to Lagrangian variables enables us to obtain a system of equations describing the gas flow behind the front of an intense shock wave, which is suitable for the application of the thin-shock-layer flow method. A solution is constructed in the form of series in powers of a small parameter which characterizes the ratio of the gas densities at the front of the leading shock wave. We remark that all nonlinear effects of the problem are concentrated in the equation to determine the law of motion of a particle in zero-order approximation. The cases in which this equation can be integrated are pointed out. For the remaining unknowns, the solution is taken in quadratures. We study the rearrangement of the gas flow in the shock layer when the motion of the body is changed. The flow rearrangement zone is distinguished. Also, a condition to determine the life time of that region (the time of establishment of the new flow regime) is obtained. In a specific case of passing from a steady motion of a wedge to a uniformly accelerated motion, the time of establishment of the uniformly accelerated motion is determined from a quadratic equation.  相似文献   
15.
The yield and energy distributions of sodium atoms upon electron-stimulated desorption from sodium layers adsorbed on tungsten coated with a gold film are investigated for the first time as functions of the thickness of the gold film, the concentration of deposited sodium, and the surface temperature. It is found that the energy distributions exhibit two peaks, namely, a narrow peak with a maximum at about 0.15 eV, whose intensity continuously increases with increasing temperature, and a broad peak with a maximum at about 0.35 eV, whose intensity either decreases or remains constant with increasing temperature. It is shown that both peaks arise as a result of the same excitation, which gives rise to different channels of electron-stimulated desorption of sodium atoms. Possible mechanisms of electron-stimulated desorption and the kinetics of destruction of the surface coating are discussed.  相似文献   
16.
17.
The dependences of the Auger signal and adsorbate desorption flux on the anneal time and rate constants of the near-surface reactions and diffusion into the bulk have been obtained from the theory of heat conductivity. It is shown that the decay of the Auger signal with time t is a linear function of only under surface-limited diffusion of adatoms into the bulk, exactly what was observed in the annealing of Si/Ta. It is shown also that the initial adatom distribution in the bulk obtained during heating the adlayers of different thickness to the anneal temperature practically does not affect the dependence of the measured signals on time, while becoming manifest in their dependence on the anneal temperature. The relation between the dissolution time of an adlayer during heating and its thickness has been found. Fiz. Tverd. Tela (St. Petersburg) 41, 1712–1719 (September 1999)  相似文献   
18.
The yield of samarium (Sm) atoms under electron stimulated desorption from Sm layers adsorbed on the surface of oxidized tungsten was studied as a function of incident electron energy, surface coverage by samarium, degree of tungsten oxidation, and substrate temperature. The measurements were conducted by the time-of-flight technique with a surface ionization detector in the substrate temperature interval from 140 to 600 K. The yield vs. incident electron energy function has a resonance character. Overlapping resonance peaks of Sm atoms are observed at electron energies of 34 and 46 eV, which may be related to excitation of the Sm 5p and 5s levels. The Sm yield is a complex function of samarium coverage and substrate temperature. Sm atom peaks occur only in the Sm coverage range from 0 to 0.2 monolayers (ML), in which the yield passes through a maximum. The shape of the yield temperature dependence is a function of Sm coverage. For low Sm cover-ages (<0.07 ML), the yield decreases slowly with the temperature increasing to 270 K, after which it drops to zero at temperatures above 360 K. At higher coverages, the Sm yield passes through a maximum with increasing temperature and additional peaks appear at electron energies of 42, 54, and 84 eV, which can be assigned to excitation of the tungsten 5p and 5s levels. These peaks are most likely associated with desorption of SmO molecules, whose yield reaches a maximum at an Sm coverage of about 1 ML.  相似文献   
19.
Growth kinetics of graphene and graphite layers on the surface of carbon-saturated rhenium has been investigated. The experimental data agree well with the results of the mathematical analysis of diffusion processes in the metal bulk with the participation of carbon atoms and the subsequent precipitation of carbon on the surface. It has been established that graphene layers of rigorously specified thickness in the range of 1–50 layers can be grown on metal in the temperature range of 1300–1500 K.  相似文献   
20.
This paper reports on a study of the electron-stimulated desorption of negative oxygen ions from the O/Ru surface, which represents an additional factor responsible for the destruction of the protective oxide layer of the mirrors used in ultraviolet lithography. The cross section of degradation of the O/Ru layer due to the electron-stimulated desorption of the O+ and O ions and the O atoms has been found to be 1.6 × 10−19 cm2. A comparison of the dependences of the electron-stimulated desorption yield of O+ and O ions on the incident electron energy E with the ionization cross section of the adsorbate core level σ O2s (E) has revealed that the ionization of the O 2s level is the main channel of the electron-stimulated desorption of O ions.  相似文献   
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