Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces

We report on the observation of new phenomena that arise under Cs adsorption on n-GaN(0001) and n-InGaN(0001) surfaces. First, an extremely highly quantum efficient photoemission has been found by excitation with visible light in the transparency region of GaN and InGaN. The photoemission is revealed to appear due to the formation of an electron accumulation layer in the vicinity of the surfaces. Second, a large variety of band bending and potential wells are provided by the Cs coverages. The accumulated charge density at the n-InGaN surface is much stronger than that at the n-GaN surface. Third, a new effect is revealed, namely, the appearance of an oscillation structure in the spectral dependences of the threshold photoemission. A model concept is proposed for photocurrent oscillations that takes into account the formation of an accumulation layer and the multiple-beam interference in parallel-sided GaN or InGaN samples.     

An STM study of the localized atomic reaction of 1,2- and 1,4-dibromobenzene at Si(1 1 1)-7 × 7

A comparative study is reported of the thermal reaction of 1,2- and 1,4-dibromobenzene (1,2- and 1,4-diBrPh) on Si(1 1 1)-7 × 7, investigated by STM. Some results are given for the intermediate case of 1,3-diBrPh. The STM images gave evidence of a different pattern of reaction to yield pairs of Br-Si for 1,2-, 1,3- and 1,4-diBrPh. The ratio of pairs of Br-Si to single bromination events was 1:2 for 1,2-diBrPh and 1:3 for 1,4-diBrPh. In many cases organic residue from the bromination reaction, R-Si, was evident in the STM image. The products R-Si and Br-Si were found to be bound to adjacent Si, for both 1,2- and 1,4-diBrPh. The mean Br?Br pair separation at the surface depended on the parent molecule, being 7.6 Å for 1,2-diBrPh, 10.3 Å for 1,3-diBrPh, and 11.3 Å for 1,4-diBrPh. These separations are, in each case, about 4 Å greater than the separation of the Br-atoms in the intact parent molecule, which increases systematically down the series. There was a marked decrease in the percentage of R-Si accompanying the Br-Si in going down the series, decreasing from 70% for 1,2- to 20% for 1,4-diBrPh; this was interpreted as being due to a decrease in the percentage of `benzene-mediated' reaction dynamics, in which the benzene ring was bound to the surface. At moderately increased surface temperature (45 °C) the reaction of 1,2- and also 1,4-diBrPh no longer resulted in R-Si formation, suggesting that the dynamics had altered from benzene-mediated to `bromine-mediated'.     

On the accuracy of classical, semiclassical and quantum methods in collision line broadening calculations: Comparative analysis for C2H2-Ar, He systems

Accuracies of classical, semiclassical and quantum methods are comprehensively examined in calculations of impact line widths of C₂H₂ molecules perturbed by Ar and He. The field of comparative study covers both infrared absorption and Raman scattering lines of acetylene having rotational quantum number J=0-30 at temperatures 173 and 296 K. Calculations have been made by fully classical method and by three basic least approximate semiclassical methods, namely, Neilsen-Gordon (NG) method, peaking approximation (PA) and Smith-Giraud-Cooper (SGC) method. Most accurate ab initio potential energy surfaces (PES) of Yang et al. (1996) [21] and Mozsynski et al. (1995) [22] have been applied to model C₂H₂-Ar and C₂H₂-He interactions. The comparison has been made also with available experimental data and with the results of rigorous fully quantum-mechanical calculations within close coupling and coupled states approaches in identical conditions. Semiclassical methods are proved to be not so much accurate as it is generally believed since all they gave in the cases considered seriously underestimated results. The fundamental issue of the adequacy of simplified trajectories in collision broadening calculations is finally reasonably solved. In cases of C₂H₂-Ar and C₂H₂-He systems the use of the “exact” isotropic trajectories (i.e. driven only by the isotropic part of PES) is the main reason of failing of NG, PA and SGC methods. Thus the neglecting of back-influence of the RT exchange on the classical path is a principal defect of semiclassical methods. Finally, the application of simplified trajectories is recognized as inadequate and risky in broadening calculations for molecules having relatively small rotational constants when accurate ab initio PES are applied.     

Hidden symmetries of integrable conformal mechanical systems

We split the generic conformal mechanical system into a “radial” and an “angular” part, where the latter is defined as the Hamiltonian system on the orbit of the conformal group, with the Casimir function in the role of the Hamiltonian. We reduce the analysis of the constants of motion of the full system to the study of certain differential equations on this orbit. For integrable mechanical systems, the conformal invariance renders them superintegrable, yielding an additional series of conserved quantities originally found by Wojciechowski in the rational Calogero model. Finally, we show that, starting from any N=4 supersymmetric “angular” Hamiltonian system one may construct a new system with full N=4 superconformal D(1,2;α) symmetry.     

Raman amplification with reduced polarization impairments in the fibre with tailored spin profile

By using two-section fibre where the first section has no spin and the second one is periodically spun, we demonstrate reduced polarization dependent gain and polarization mode dispersion (0.3 dB and 0.0072 ps·km^−1/2 correspondently) in a distributed fibre Raman amplifier.     

Galerkin Approximations for the Linear Parabolic Equation with the Third Boundary Condition

We solve a linear parabolic equation in ^d , d 1, with the third nonhomogeneous boundary condition using the finite element method for discretization in space, and the -method for discretization in time. The convergence of both, the semidiscrete approximations and the fully discretized ones, is analysed. The proofs are based on a generalization of the idea of the elliptic projection. The rate of convergence is derived also for variable time step-sizes.     

Multifunctional Sulfur-Hyperdoped Silicon Nanoparticles with Engineered Mid-Infrared Sulfur-Impurity and Free-Carrier Absorption

Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈10¹⁵ cm⁻³), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response.     

Complex area correlation theorem for statistical pulses in coherent linear absorbers

We derive a complex area correlation theorem describing global second-order statistical properties of pulses propagating in coherent linear absorbers. We also illustrate temporal evolution of a generic partially coherent pulse in a coherent linear absorber by discussing the behavior of its temporal intensity profile and degree of coherence.