Photodegradation mechanisms of acyclovir in water and the toxicity of photoproducts

Journal of Radioanalytical and Nuclear Chemistry - In the present work the final products of coumarin radiation chemical transformation are investigated by chromatography. During radiolysis of...     

Optical fiber acoustic sensing multiplexing system based on TDM/SFDM

We propose a system of time-division multiplexing(TDM) and spatial frequency-division multiplexing(SFDM). Extrinsic Fabry–Perot interferometric sensors are applied to detect weak acoustic signals. The broadband source is employed, the light from it is modulated by a pulse signal sequence and is efficiently amplified by semiconductor optical amplifiers. Experimental results show that the equivalent noise pressure spectrum level is-97.2 d B re 1 rad/√Hz below 1250 Hz, and the cross talk between two sensors in one TDM channel is-32.7 d B with a cavity length difference of 60 μm. The number of sensors in this multiplexing system can theoretically reach 160.     

TBOR-shaped electro-optic modulator with dual output based on double-layer graphene

We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At $\lambda =1550\text{ nm}$, when the switching states are based on the chemical potential, ${\mu }_{\mathrm{c}}=0.38\text{ eV}$ and ${\mu }_{\mathrm{c}}=0.4\text{ eV}$, the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology.