首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2226篇
  免费   4篇
  国内免费   7篇
化学   835篇
晶体学   21篇
力学   156篇
数学   266篇
物理学   959篇
  2017年   12篇
  2016年   18篇
  2015年   16篇
  2014年   20篇
  2013年   88篇
  2012年   44篇
  2011年   62篇
  2010年   41篇
  2009年   54篇
  2008年   63篇
  2007年   74篇
  2006年   58篇
  2005年   65篇
  2004年   76篇
  2003年   74篇
  2002年   85篇
  2001年   56篇
  2000年   63篇
  1999年   53篇
  1998年   41篇
  1997年   39篇
  1996年   35篇
  1995年   35篇
  1994年   31篇
  1993年   33篇
  1992年   29篇
  1991年   29篇
  1990年   36篇
  1989年   32篇
  1988年   29篇
  1987年   53篇
  1986年   37篇
  1985年   48篇
  1984年   45篇
  1983年   35篇
  1982年   45篇
  1981年   39篇
  1980年   36篇
  1979年   36篇
  1978年   29篇
  1977年   30篇
  1976年   25篇
  1975年   22篇
  1974年   18篇
  1973年   30篇
  1972年   14篇
  1937年   10篇
  1934年   10篇
  1933年   10篇
  1932年   9篇
排序方式: 共有2237条查询结果,搜索用时 15 毫秒
991.
992.
993.
994.
995.
New limits on double beta processes in 92Mo have been obtained using a 400 cm3 HPGe detector and an external source of high-purity natural molybdenum. At confidence level CL= 90% they are 1.9 · 1020 y for the (0v + 2v)β+EC transition to the ground state, 8.9 · 1020 y and 8.1 · 1020 y for the (0v + 2v)ECEC transitions to first excited 2 1 + and 0 1 + states in 92Zr, correspondingly.  相似文献   
996.
We prove that for a class of infinite dimensional Hamiltonian systems certain homoclinic connections to the origin cease to exist when the non-linearities have `super-critical' growth. The proof is based on a variational principle and a Poho\v{z}aev type identity.

  相似文献   

997.
The correlation between structure/microstructure and thermomechanical properties has been investigated by the Thermally Stimulated Creep (TSC) technique in a high performance thermostable thermoset matrix composite. The high resolving power of this technique allows us to analyse the retardation mode. The kinetics of molecular movements liberated at the glass transition has been investigated by the technique of fractional loading: the analysis of each elementary process gives the real compliance and the retardation time as a function of temperature. The values of the activation parameters show the existence of a compensation phenomenon which characterizes the microstructure. It also gives access to the loss compliance of the composite material as a function of temperature and frequency. The predictive calculation of loss compliance has been validated by the results obtained by dynamic mechanical analysis (DMA).  相似文献   
998.
Raman scattering (RS) in amorphous films of In1−xSex with 0.67±x?0.38 has been studied in backscattering geometry with the use of a microscope. Recorded RS spectra are revealing a mixed vibrational density-of-states and molecular character. The spectra spread from the Rayleigh line up to 200-250 cm−1. The bands superimposed on the continua are related to zone center modes of the relevant crystal counterpart, Se-Se or In-In vibrations. The RS spectra suggest the structure of the In1−xSex alloys to be the continuous random network built up of In centered tetrahedral clusters with In and Se atoms at the corners. The structure of the Se-rich alloys is similar to 4-2 networks with dominant InSe4/2 clusters and two-fold coordination of Se bridging atoms. That of the In-rich alloys is expected to resemble 4-3 network with rather strong involvement of In atoms at corner of the In-centered tetrahedral clusters and Se atoms being linked to three In ones.  相似文献   
999.
Thin Al2O3 layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO2 and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N2 annealed thick Al2O3 layers were characterized by secondary ion mass spectrometry (SIMS), elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). We show a perturbed region (≈5 nm thick) at the Al2O3/Si interface by XPS and Auger electron spectrometry (AES). Post-deposition annealings induced important interface oxidation, Si atoms injection and SiO2/Al2O3 mixture whereas the initial interface was abrupt. Silicon oxidation before Al2O3 growth highly limits interfacial oxidation and improves interfacial quality. We proposed that OH groups may play a key role to explain silicon oxidation during post-deposition annealings in inert ambience with low oxygen contamination levels.  相似文献   
1000.
The Coulomb excitation measurements for the230Th nucleus with32S,84Kr and142Nd projectiles are presented. The use of different projectiles allowed us to get information in the ground-state band and side bands. The energy spectrum of the ground-state band and of the lowest negative-parity band have been investigated up to the spin valueI=24+ andI=19?(21), respectively. Five side bands (K π=0+, 2 1 + , 2 2 + , 1?, 2?) were observed also. The branching ratios for a large number of transitions in the spin regionI≦10 for π=+1 andI≦9 for π=? 1 are analysed. The full set of experimental data contains information on the mixing of the adiabatic states and on the nuclear response to the electromagnetic field ofγ-radiation. It is shown that the experimental data may be explained taking into account the coupling of the ground-β- and twoγ-bands and also of theK π=0?, 1? and 2? negative-parity bands. An enhancement of the transitions from theγ-to theβ-band in respect to the transitions from theγ to the ground band and from theβ- to the ground band is reported. The mixing of the negative-parity bands is found to be typical for the alignment of the octupole-vibrational angular momentum. The strong spin dependence of the intrinsic matrix elements of the electric-dipole operator follows from the branching ratios of inter- and intra-band transitions from theK π=0? states.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号