Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport

Surface morphology of high-mobility heterostructures is examined and correlated with dc transport. All samples examined show evidence of lines in the [11-0] direction with roughness ranging from small-amplitude features to severe anisotropic ridges. Transport in these samples is consistent with that in samples having artificially induced 1D charge modulations. The native surface properties reflect a prevalent, anisotropic disorder affecting 2D electron conduction. Importantly, the native lines are orthogonal to the stripes theoretically proposed to explain high Landau level transport anisotropies.     

Reorientation of anisotropy in a square well quantum hall sample

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are isotropic in perpendicular magnetic field but become strongly anisotropic at nu = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, B(ip) approximately 2.5 T, with the easy-current direction parallel to B(ip) but rotates by 90 degrees at B(ip) approximately 10 T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.     

Graphene growth on h-BN by molecular beam epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.     

Über die allgemeinen Integrale von partiellen Differentialgleichungen erster Ordnung mit einer unbekannten Funktion und von Systemen solcher Gleichungen,die Integrale im Sinne von S. Lie zulassen

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