Interpretation of resonance cars and shpolskii spectra with calculated molecular geometries,vibrational frequencies and relative intensities: Chrysene in it's lowest excited singlet and triplet state

Coherent anti-Stokes Raman scattering (CARS) spectra of excited molecules as well as Shpolskii spectra provide information about geometry changes between ground and excited states. Vibrational frequencies and relative intensities from recently obtained CARS spectra of the chrysene S₁ and T₁ state and earlier observed Shpolskii spectra are interpreted in terms of molecular geometry and force-field changes by means of quantum-chemical consistent force field (QCFF) and Franck-Condon factor calculations. The comparison of observed and calculated relative intensities indicates a coupling between the S₁ and S₂ state enhancing some of the vibrational radiative singlet transitions both in absorption and fluorescence spectra whereas within the phosphorescence spectra proportionality to calculated Franck-Condon factors is obeyed. The T₁ state is the more loosely bound state and its geometry change is different from that of the S₁ state. The resonance CARS transitions in the S₁ state are assigned to totally symmetric vibrations getting their intensity by a coupling scheme analogous to the A term of the resonance Raman effect: the relative intensity of a transition is shown to be proportional to the Franck-Condon factor to the higher excited state and to the squared vibrational frequency. Using this relation this state can be identified by means of its finger-print-like intensity pattern.     

Muonic X-ray intensities in SF6 and in H2+SF6

With a high pressure gas target muonic F and S X-ray intensities in SF₆ and H₂+SF₆ have been measured. It was found that the distribution of muons between sulphur and fluorine is not at all equal to the ratio of the atomic numbers Z.     

The influence of coherence effects on measurements of saturable absorption with broadband radiation

For a gaussian broadband radiation field (multimode laser without phase-correlation) the bleaching behaviour of a homogeneously broadened two level system is investigated in dependence on the spectral width (δυ) of the field. Taking into consideration the coherent mode-interaction, originating from the nonstationary reaction of population inversion on the fluctuations of the radiation field, a decrease of the bleaching effect results as soon as the spectral width δυ becomes larger than ⊥₁ = 1/T₁ with T₁ the longitudinal relaxation time of the molecular transition concerned. Neglecting this effect in the analysis of broadband bleaching measurements can result in the unjustified assumption of an inhomogeneous broadening of the spectral band under consideration, which has consequences on the magnitude of the molecular absorption cross-section derived from these measurements.     

Contactless gating,surface charging and illumination effects in a buried Al<Subscript>0.24</Subscript>Ga<Subscript>0.76</Subscript>As/GaAs quantum well structure

The conductivity of an Al_0.24Ga_0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density . Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ₀ ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.     

Scaling and universality of integer quantum Hall plateau-to-plateau transitions

We have investigated the integer quantum Hall plateau-to-plateau transition in two-dimensional electrons confined to AlxGa(1-x)As-Al0.33Ga0.67As heterostructures over a broad range of Al concentration x. For x between 0.65% and 1.6%, where the dominant contribution to disorder is from the short-range alloy potential fluctuations, we observe a perfect power-law scaling in the temperature range from 30 mK to 1 K with a critical exponent kappa = 0.42 +/- 0.01.     

Long-distance diffusion of excitons in double quantum well structures

In this Letter we report on lateral diffusion measurements of excitons at low temperature in double quantum wells of various widths. The structure is designed so that excitons live up to 30 micros and diffuse up to 500 microm. Particular attention is given to establishing that the transport occurs by exciton motion. The deduced exciton diffusion coefficients have a very strong well width dependence, and obey the same power law as the diffusion coefficient for electrons.     

Strongly enhanced hole-phonon coupling in the metallic state of the dilute two-dimensional hole gas

We have studied the temperature dependent phonon emission rate P(T) of a strongly interacting (r(s) > or =22) dilute 2D GaAs hole system using a standard carrier heating technique. In the still poorly understood metallic state, we observe that P(T) changes from P(T) approximately T5 to P(T) approximately T7 above 100 mK, indicating a crossover from screened piezoelectric (PZ) coupling to screened deformation potential (DP) coupling for hole-phonon scattering. Quantitative comparison with theory shows that the long range PZ coupling between holes and phonons has the expected magnitude; however, in the metallic state, the short range DP coupling between holes and phonons is almost 20 times stronger than expected from theory. The density dependence of P(T) shows that it is easier to cool low-density 2D holes in GaAs than higher density 2D hole systems.     

Organic homojunction diodes with a high built-in potential: interpretation of the current-voltage characteristics by a generalized Einstein relation

We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials.     

Imaging transport resonances in the quantum Hall effect

We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a dc bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island in the IS. These islands enable resonant tunneling across the IS, enhancing its conductance by more than 4 orders of magnitude. The images provide a quantitative measure of disorder and suggest resonant tunneling as the primary mechanism for transport across ISs.