Optical image asymmetric cryptosystem using fingerprint based on iterative fraction Fourier transform

A novel asymmetric cryptosystem for optical image is proposed using fingerprint based on iterative fractional Fourier transform. To enhance the security, a hyperchaotic phase generated by a 4D Lorenz system is considered as the public key in the proposed encryption system, while the private key is emerged by the retrieved phase and fingerprint. In the encryption process, the secret information is hid into the hyperchaotic phase. Subsequently, the private key can be obtained by a reversible operation. To decrypt the original image, the ciphertext and private key are imported into the input plane of fractional Fourier system. This system is also applicable for information authentication because the fingerprint is used both in encryption and decryption approach. Some numerical simulations have been done to test the validity and capability of the encryption system.     

硅探测器的数字化脉冲形状甄别

介绍了利用硅探测器的脉冲形状甄别进行粒子鉴别的原理。详细叙述了基于数字化方法的脉冲形状甄别的实现。采样频率和位数是数字化方法的两个重要参数。对于硅探测器信号,采用100 MS/s,12 bit的Digitizer可以满足脉冲形状甄别法对时间分辨的要求。同时对该方法粒子鉴别的特征和能量阈值做了简要的分析和对比。粒子背面入射硅探测器的所得的阈值低于正面入射的情况。例如对于氖周围的同位素,背面入射情况的阈值约为100 MeV,为正面入射情况下鉴别阈值的二分之一,相当与ΔE-E方法中ΔE探测器厚度约为60 μm情况下的阈值。最后定性讨论了硅探测器的电阻率不均匀性和沟道效应对粒子鉴别性能的影响。In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail.     

一种用于电光开关的高速、高压电脉冲的产生

介绍了一种用于电光开关驱动源的高压超快电脉冲产生技术;电路采用级联的雪崩晶体管串和微波传输线结构,输出阻抗50Ω;在50Ω负载情况下,获得脉冲下降时间为1ns、幅度达到5kV、峰值电压为6.4 kV、幅度和半宽度稳定性优于2％、触发晃动为±15ps、触发延时为30 ns,脉冲峰值电流为128 A的高压高速大电流脉冲.     

Observation of ZnO nanoparticles outside pores of nano Zn4O(C8H4O4)3 metal-organic framework

It was recognized that ZnO can be formed during synthesizing nano Zn₄O(C₈H₄O₄)₃ metal-organic framework (nano MOF-5). Furthermore, it is generally accepted that the ZnO is dispersed inside the pores of MOF-5. However, herein, the measurements of X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) showed that the crystal particle sizes of ZnO in MOF-5 are in the range of 5-18 nm, which are larger than the pore size of MOF-5 (1.3 nm). This clearly demonstrates that those ZnO nanoparticles are located outside the pores of MOF-5.     

Storage and retrieval of ultraslow optical solitons in coherent atomic system

We investigate the propagation of intense probe pulses in a lifetime broadened Λ-type three-level atomic system with a configuration of electromagnetically induced transparency. We find that ultraslow optical solitons formed by a balance between dispersion and nonlinearity can be stored and retrieved in the system by switching off and on a control field. Such pulses are robust during storage and retrieval, and hence may have potential applications in optical and quantum information processing.     

生长温度对In0.53Ga0.47As/InP的LPMOCVD生长影响

利用LPMOCVD技术在InP衬底生长了InxGa1-xAs材料，获得表面平整．光亮的In0.53Ga0.47As外延层。研究了生长温度对InxGa1-xAs外延层组分、表面形貌、结晶质量、电学性质的影响。随着生长温度的升高，为了保证铟在固相中组分不变，必须增加三甲基铟在气相中的比例。在生长温度较高时，外延层表面粗糙。生长温度在630℃与650℃之间，X射线双晶衍射曲线半高宽最窄，高于或低于这个温度区间，半高宽变宽。迁移率随着生长温度的升高而增加,在630℃为最大值，然后随着生长湿度的升高反而降低。生长温度降低使载流子浓度增大，在生长温度大于630℃时载流子浓度变化较小。     

装置极化效率对极化中子成像质量的影响及修正分析

极化中子照相技术通过分析极化中子束的自旋相移对样品磁场进行成像, 自旋极化/分析装置是照相系统的主要组成部分. 引入中子自旋极化/分析装置的极化效率参数, 从中子极化矢量与磁场相互作用机理出发, 重新推导探测中子强度与磁场分布的定量关系, 利用谱仪模拟软件VITESS, 选取bender型超镜极化器和 ³He 自旋过滤器作为极化/分析装置, 对量化修正式进行验证, 并综合装置极化效率、单色器能量分辨精度和bender型极化器的几何结构等参数, 初步分析极化中子照相技术的磁场定量检测能力, 相关结果可为极化中子照相的实验数据处理技术研究及装置设计提供参考. 关键词： 极化效率 中子照相 磁场成像     

联合梯度预测与导引滤波的图像运动模糊复原

针对由相机与所摄景物之间发生相对位置移动所导致的图像运动模糊,提出了一种鲁棒的基于单幅运动模糊图像的盲反卷积算法。该方法首先通过预测图像中的较强边缘信息,实现用简单、易于求解的优化问题在傅里叶域中快速、准确地估计出点扩散函数。然后利用得到的点扩散函数,使用基于梯度约束的非盲反卷积算法复原清晰图像,同时采用一种新的边缘保持滤波器-导引滤波来消除噪声并抑制振铃效应。实验结果表明：本文的算法能够快速地从单幅运动模糊图像复原出具有清晰边缘和纹理的高质量图像,并且运算时间不超过20 s。     

苯基荧光酮-十六烷基三甲基溴化铵分光光度法测定芦荟中痕量锗

在混合掩蔽剂盐酸羟胺和抗坏血酸混合液存在下,锗与苯基荧光酮和十六烷基三甲基溴化铵生成三元橙红色络合物。锗浓度在1.0-1.5μg/25mL范围内符合比耳定律。此法用于测定芦荟中的痕量锗,获得较为满意的结果。     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。