原位脱羧制备的配合物(HP2W18O62)(C6H6NO2)5·2H2O: 结构、光谱及电化学性能

采用水热法将钨酸钠和浓磷酸与有机配体吡啶-2, 6-二羧酸通过原位脱羧制得配合物(HP₂W₁₈O₆₂)(C₆H₆NO₂)₅·2H₂O (1), 并用红外光谱、紫外光谱、循环伏安(CV)和X射线单晶衍射等方法进行了表征。分子中的2-吡啶甲酸来源于吡啶-2, 6-二羧酸 的脱羧反应。化合物1属于单斜晶系, 空间群P2₁/n, 晶胞参数分别为:a=1.553 3(2) nm, b=2.006 3(3) nm, c=2.759 9(4) nm, β=103.981(2)°, Z=4, F(000)=8 816。分子间氢键和2-吡啶甲酸与杂多化合物间的弱相互作用使该化合物具有3D超分子结构。CV结果表明, 化合物1有四步氧化还原反应。     

Bi2WO6/g-C3N4复合型催化剂的制备及其可见光光催化性能

利用溶剂热法, 把Bi₂WO₆纳米颗粒植入g-C₃N₄层间和表面成功地制备了Bi₂WO₆/g-C₃N₄复合型光催化剂。通过XRD、SEM、TEM、BET和UV-Vis分别对样品的结构、组成、形貌、比表面积、光学性能进行了表征。结果表明, g-C₃N₄层状结构被部分剥离成碎片且与Bi₂WO₆纳米颗粒形成了复合物。Bi₂WO₆/g-C₃N₄复合型光催化剂与单一Bi₂WO₆相比不仅扩展了可见光的响应范围、增大了比表面还加速了光生电子与空穴的分离。结果表明, Bi₂WO₆的最佳负载量为60wt%时, 复合型光催化剂具有最高的可见光催化活性且性能稳定、易回收。     

Selective derivatization of oxime-blocked tolylene-2,4-diisocyanate

A selective reaction of cyclohexanone oxime-blocked tolylene-2,4-diisocyanate（2,4-TDI）with amino siloxane was observed,in which amines were capable of discriminating two reactive groups in the 2,4-TDI molecule.Thus,tolylene-2-tert-butyldimethylsilyloxyethyl carbamide-4-cyclohexanone oxime carbamate was synthesized and its precise structure was determined by single-crystal X-ray diffraction.Moreover,it was found that oxime-blocked isocyanate could react selectively with the–NH2group with the–OH group unprotected in ethanolamine.     

Three new eudesmane sesquiterpenes from Artemisia vestita

Three eudesmane sesquiterpene lactones,namely artemivestinolides A–C(1–3),along with three known 11-epimeric lactones(4–6),were isolated from the aerial parts of Artemisia vestita.Their structures were elucidated on the basis of extensive spectroscopic analyses(IR,HR-ESIMS,1D NMR and 2D NMR),and the absolute confgurations were determined by single-crystal X-ray diffraction(with copper radiation).Furthermore,in an in vitro assay,the three new compounds exhibited a moderate inhibition of the lipopolysaccharide(LPS)-induced nitric oxide(NO)production in BV-2 microglial cells.     

一个晶态铅配位聚合物的合成、晶体结构、剥离及荧光性质

通过水热反应合成了1个二维层状结构的铅配位聚合物,[Pb(4-NPA)(H₂O)]_n(1)(4-H₂NPA=4-硝基邻苯二甲酸)。对化合物1进行了红外光谱、元素分析、热重性质以及单晶、粉末X射线衍射表征。在化合物1中,有机配体4-NPA²-阴离子采用(κ¹-κ¹)(κ²-κ²)-μ₄桥连方式连接了4个Pb(Ⅱ)离子形成一维链状结构,该链状结构再通过1个羧酸基团形成一个二维无机层结构。利用"自上而下"的方法将该化合物在甲醇中进行了剥离实验。此外,我们还研究了化合物1的块状样品、剥离样品以及分散在甲醇中的样品的荧光性质。     

β-二亚胺配体支持的铝氧硼六元环化合物的合成、表征及其热稳定性研究

LAlH2(L=(Z)-4-[(2,6-二异丙基苯基)氨基]戊-3-烯-2-亚基-2,6-二异丙基苯胺)与2-三氟甲基苯硼酸反应,合成含铝氧硼六元环的化合物LAl[OB(2-CF3C6H4)]2(μ-O)。化合物是以铝原子为螺中心将无机环AlO3B2和有机环C3N2连在一起的独特例子。通过X射线单晶衍射测定了化合物的单晶结构,对其进行了元素分析、IR、1H NMR等表征。并通过热重分析对化合物进行了热稳定性研究。     

A Quantum Proxy Weak Blind Signature Scheme

We present a weak blind signature scheme based on a genuinely entangled six qubits state. Different from classical blind signature schemes and current quantum signature schemes, our quantum weak blind signature scheme could guarantee not only the unconditionally security but also the anonymity of the message owner. To achieve that, quantum key distribution and one-time pad are adopted in our scheme. Our scheme has the characteristics of classical security and quantum security.     

Deterministic Remote Entangled State Preparation Using Cluster State in Cavity QED

We propose a scheme to prepare a two-qubit remote entangled state based on four-qubit cluster state in cavity quantum electrodynamics which involves the interaction of the atoms with the cavity. Through using four-particle cluster state as a quantum channel, we shown that the probability and fidelity of the successful remote state preparation can approach unit. In addition, our protocol only need single qubit measurement instead of the conventional Bell-state measurement, then it is quite simple but also very robust to the cavity decay and the influence of the thermal field.     

声悬浮过程的格子Boltzmann方法研究

采用轴对称多弛豫时间格子Boltzmann(LB)方法,研究了圆柱形封闭谐振腔中圆盘形样品的声悬浮过程.模拟结果表明,(001)模式下谐振腔的共振长度L=0.499λ,在谐振腔中心引入样品后共振漂移量δL≈-0.9,这与线性声学理论计算结果基本相符.声悬浮力的LB模拟过程包含了黏滞性效应和共振漂移效应,所获得的模拟结果与理论公式计算值在量值上一致,而且其在细节上更符合实验现象.此外,LB模拟还揭示出了声悬浮过程中的声压波形畸变、声流和声辐射压等非线性声学效应.     

Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate

Growth and interfacial properties of atomic layer deposited Al_0.7Ti_0.3O _y on Ge have been investigated as a potential high-k gate dielectric for future Ge-based metal oxide semiconductor devices. A sandwich structure of Al₂O₃/TiO₂ stack is proposed for Al₂O₃/TiO₂ intermixing and high-k/Ge interfacial passivation. The film thicknesses and interface microstructure are characterized by spectroscopy ellipsometry and high-resolution transmission electron microscopy. X-ray photoelectron spectrometry is used to analyze the chemical composition and bonding states, and to reveal the band alignment of high-k/Ge heterojunctions. Metal-oxide-capacitors are formed by depositing aluminum electrodes to perform capacitance–voltage measurements for electrical characteristics. All evidences show a positive prospect of employing atomic layer deposited Al_0.7Ti_0.3O _y as high-k gate dielectric for future Ge-based devices.