饱和土与衬砌动力相互作用的圆柱形孔洞内源问题解答

考虑饱和土与衬砌结构的动力相互作用,该文研究了内源荷载作用下圆柱形孔洞的动力响应问题.将饱和土体和衬砌结构分别视为流固耦合介质和弹性均匀介质,通过引入势函数将位移控制方程化为二维轴对称波动方程.采用拉普拉斯变换,得到饱和土体位移应力的表达式及衬砌的位移应力的表达式.利用土体与衬砌结构之间的连续性条件和衬砌结构内边界上的边界条件,确定表达式的未知系数.采用逆拉普拉斯变换的数值方法,给出了问题的数值解.分析了饱和土中圆形衬砌结构随土体和衬砌结构参数变化的动力响应规律.     

A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes

Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In_0.1Ga_0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.     

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.     

Design,Synthesis and Biological Evaluation of Novel Thienylpyridyl- and Thioether-Containing Acetamides and Their Derivatives as Pesticidal Agents

Referring to the structural information of the “hit” compound A from the reported pharmacophore-based virtual screening, a series of novel thienylpyridyl- and thioether/sulfoxide/sulfone-containing acetamide derivatives have been designed and synthesized. The structures of new compounds were confirmed by ¹H NMR, ¹³C NMR and HRMS. The single-crystal structure of A was firstly reported. All the new synthesized compounds were evaluated for insecticidal activities on Mythimna separata Walker and Plutella xylostella L. Through a step-by-step structural optimization, the high insecticidal agents, especially towards Plutella xylostella L., have been found, and thienylpyridyl- and sulfone/thioether-containing acetamides Iq, Io, Ib and A, which are comparable with the control insecticides cartap, triflumuron and chlorantraniliprole in the present study, can be used as novel lead structures for new insecticides innovation research. In addition, some of the compounds, e.g., A, Ih, Id, Io and Iq, also exhibited favourable fungicidal activities against Physalospora piricola, Rhizoctonia cerealis and Sclerotinia sclerotiorum and would provide useful guidance for the design and development of new fungicides.     

线型共轭Cx桥联双金属有机化合物

分子电子器件是近年来的一个热门课题。线型共轭Cx桥联双金属有机化合物是分子导线、分子开关等分子电子器件的模型化合物之一。本文介绍了线型共轭Cx桥联双金属有机化合物的结构、合成及光电性质。     

外汇期权的多维跳-扩散模型

本文建立了外汇期权的多维跳-扩散模型,在此模型下将外汇欧式未定权益的定价问题归结为一类倒向随机微分方程的求解问题,证明了这类倒向随机微分方程适应解的存在唯一性问题,并给出了一个关于外汇欧式未定权益的定价公式.     

Dynamic buckling of stiffened plates under fluid-solid impact load

A simple solution of the dynamic buckling of stiffened plates under fluid-solid impact loading is presented. Based on large deflection theory, a discretely stiffened plate model has been used. The tangential stresses of stiffeners and in-plane displacement are neglected. Applying the Hamilton‘ s principle, the motion equations of stiffened plates are obtained. The deflection of the plate is taken as Fourier series, and using Galerkin method, the discrete equations can be deduced, which can be solved easily by Runge-Kutta method. The dynamic buckling loads of the stiffened plates are obtained from Budiansky-Roth ( B-R ) curves.     

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.     

An efficient and stable structure preserving algorithm for computing the eigenvalues of a Hamiltonian matrix

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Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.