Palladium‐Catalyzed Stereoselective Intramolecular Oxidative Amidation of Alkenes in the Synthesis of 1,3‐ and 1,4‐Amino Alcohols and 1,3‐Diamines

An efficient and practical Pd‐catalyzed intramolecular oxidative allylic amidation provides facile access to derivatives of 1,3‐ and 1,4‐amino alcohols and 1,3‐diamines. The method operates under mild reaction conditions (RT) with molecular oxygen (1 atm) as the sole reoxidant of Pd. Excellent diastereoselectivities were attained with substrates bearing a secondary stereogenic center     

Tight multipartite Bell's inequalities involving many measurement settings

We derive tight Bell's inequalities for N>2 observers involving more than two alternative measurement settings. We give a necessary and sufficient condition for a general quantum state to violate the new inequalities. The inequalities are violated by some classes of states, for which all standard Bell's inequalities with two measurement settings per observer are satisfied.     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Beta decay of 101Sn

The β decay of the very neutron-deficient isotope ¹⁰¹Sn was studied at the GSI on-line mass separator using silicon detectors for recording charged particles and germanium detectors for γ-ray spectroscopy. Based on the β-delayed proton data the production cross-section of ¹⁰¹Sn in the ⁵⁰Cr + ⁵⁸Ni fusion-evaporation reaction was determined to be about 60nb. The half-life of ¹⁰¹Sn was measured to be 1.9(3)s. For the first time β-delayed γ-rays of ¹⁰¹Sn were tentatively identified, yielding weak evidence for a cascade of 352 and 1065keV transitions in ¹⁰¹In. The results for the ¹⁰¹Sn decay as well as those from previous work on the ¹⁰³Sn decay are discussed by comparing them to predictions obtained from shell model calculations employing a new interaction in the ⁸⁸Sr to ¹³²Sn model space.     

XRD,Raman and magnetic studies of Bi1−xLaxFeO3 solid solution obtained by mechanochemical synthesis

ABSTRACT

Bi_{1 ? x}La_xFeO₃ single-phase solid solution with 0 ≤ x ≤ 0.3 was obtained by mechanochemical synthesis and characterized by X-ray diffraction, FT NIR Raman spectroscopy and magnetic studies. The nanocrystalline powders of rhombohedrally distorted perovskite structure R3c were studied ‘as synthesized’ by mechanosynthesis and after annealing at 500 °C for 1 h. The annealing, which resulted in recrystallization of the amorphous shell of the nanograins, was found to modify the external lattice modes of Bi_1?xLa_xFeO₃ and resulted in changes in the temperature variation of the magnetization.     

Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)

Density Functional Theory (DFT) calculations indicate that energetically stable structure of clean GaN(0001) surface posses (2 × 1) reconstruction, having every second row of Ga located near plane of N atoms, that gives rise to Ga-related dispersionless surface electronic state, already identified by angle resolved photoelectron spectroscopy (ARPES) measurements [S.S. Dhesi et al. Phys. Rev. B 56 (1997) 10271, L. Plucinski et al. Surf. Sci 507-10 (2002) 223, S. M. Widstrand et al. Surf. Sci. 584 (2005) 169]. The energy reduction in reconstruction proceeds via change of the hybridization of the occupied Ga surface states from sp³ to sp², transforming the empty states to p_z type. It is also shown that the electric subsurface field, modeled in new slab model which allows to simulate electric fields at the semiconductor surfaces [P. Kempisty et al., J. Appl. Phys. 106 (2009) 054901], strongly affects the energy of electronic states of GaN(0001) surfaces. The change of the field may shift the energy of surface states of bare and hydrogen covered GaN(0001) surface, by several eV with respect to the band states. The phenomenon, denoted as Surface States Stark Effect (SSSE), explains various band bending values, measured at differently doped n-type GaN(0001) surfaces. It is shown also that, for the adsorbate density up to one H atom for each Ga surface atom i.e. 1 monolayer coverage (1 ML), the hydrogen adatoms are located at the on-top positions, i.e. directly above Ga atoms. For these adsorbate densities, the H-related quantum surface state is located slightly below the valence band maximum (VBM) in the case of p-type GaN surface. For n-type GaN, the H-related surface state is located deeply in the valence band, about 2 eV below VBM. For higher, 1.25 ML hydrogen coverage, the two H adatoms create either surface attached H₂ ad-molecule (energetically stable) or triple bridge configuration is created (metastable). The H₂ ad-molecule is weekly attached to the surface, having the desorption energy barrier equal to 0.16 eV. For 1.25 ML coverage the DFT results were obtained for p-type GaN only. They show that in the ad-molecule case, a new surface electronic state arises which is located about 6.7 eV below VBM. In the case of the bridge configuration, the bridge related surface state is located closely to the conduction band minimum (CBM).     

Ultra-intense femtosecond super-heavy ion beams driven by a multi-PW laser

The paper reports the results of numerical studies on the laser-driven acceleration of super-heavy ions by a multi-PW laser pulse of ultra-relativistic intensity attainable with the Extreme Light Infrastructure lasers currently being built in Europe. Using a multi-dimensional (2D3V) particle-in-cell code, it is shown that multi-GeV super-heavy (thorium) ion beams with an intensity of $～{10}^{21}\text{–}{10}^{22}\text{W}/{\text{cm}}^2$, fluence $～{10}^{17}\text{–}{10}^{18}{\text{cm}}^{?2}$ and time duration $～20\text{–}100\text{fs}$ can be produced from a sub-μm thorium target irradiated by a 150-J, 20-fs laser pulse with an intensity of ${10}^{23}\text{W}/{\text{cm}}^2$. Such ion beams are impossible to obtain presently with the use of conventional RF-driven accelerators, so they can open the door to new areas of research in both nuclear and high energy-density physics.     

Time decay of the solution to the Cauchy problem for a three-dimensional model of nonsimple thermoelasticity

This paper is devoted to the investigation of the solution to the Cauchy problem for a system of partial differential equations describing thermoelasticity of nonsimple materials in a three-dimensional space. The model of linear dynamical thermoelasticity of nonsimple materials is considered as the system of partial differential equations of fourth order. In this paper, we proposed a convenient evolutionary method of approach to the system of equations of nonsimple thermoelasticity. We proved the L^p−L^q time decay estimates for the solution to the Cauchy problem for linear thermoelasticity of nonsimple materials.