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The scattering of heavy ion with a multilevel Rydberg atom in the presence of an electromagnetic field is studied. The interaction of Rydberg atom and the e.m field is explored using non-perturbative quasi-energy technique. Although the results are presented for selected excitations but in actual calculations we have included many levels of the atom. The effect of various parameters are shown on collisional excitation process. As an illustration detailed calculations are performed for the inelastic proton-Na Rydberg atom collision accompanied by the transfer of photons and the effects of dressing due to the field are considered. The emphasis of the present work is on collision induced transitions especially the case that involves change of orbital as well as principal quantum number. Received 26 December 2001 / Received in final form 8 April 2002 Published online 19 July 2002  相似文献   
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The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β1, β2 and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β2-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.  相似文献   
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A fast-frequency modulated (FM) diode laser has been optically narrowed using the technique of resonant optical feedback, to provide linewidths in each FM mode of ≈ 200 kHz peak-to-peak. With a drive frequency of 50 MHz and modulation index of 0.2, the FM laser has been used for the first time to obtain Doppler-free FM spectra of the Rb D1 line at 795 nm. The potential use of this system for laser frequency stabilisation is discussed.  相似文献   
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The determination of the past and the future of a physical system are complementary aims of measurements. An optimal determination of the past of a system can be achieved by an informationally complete set of physical quantities. Such a set is always strongly noncommutative. An optimal determination of the future of a physical system can be obtained by a Boolean complete set of quantities. The two aims can be reconciled to a reasonable degree with using unsharp measurements.This work was partly supported by the Bundesministerium für Forschung und Technologie, Bonn, the Research Institute for Theoretical Physics, Helsinki, and the University of Turku Foundation, Turku.  相似文献   
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Cognitive style refers to differences that can be perceived in individuals due to differing cognitive structures. There has been a large amount of research on how cognitive style affects managerial decision-making, particularly in the context of management information systems, but little or no attempt to relate these findings to operational research. This paper reviews the findings of cognitive-style research from the perspective of operational research, and draws a number of useful inferences concerning the matching of OR aids to managers, the presentation of information and recommendations, the use and acceptance of OR, and the structure of OR groups. Further, it is argued that cognitive-style findings help to give a justification to the move towards ‘soft’ approaches to analysis.  相似文献   
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Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.  相似文献   
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