利用全反射原理测定水的折射率

介绍一种利用全反射原理测定水的折射率的方法。实验中利用He-Ne激光束在水底产生点光源,根据全反射原理对水底的暗影和水深进行测量,求出水的折射率。     

带轴向温控仪的金属蒸气激光管径向温度场分析

对带轴向温控仪的金属蒸气激光放电管,建立了描述放电管径向温度场的简单数学模型.给出了由热辐射和热传导引起的径向温度变化的解析表达式,计算分析了轴向温控仪对激光管管壁温度和径向温度分布的作用机制.结果表明轴向温控仪可在一定范围内独立调节放电管管壁温度和减小激光管的径向温度梯度,可有效提高激光器运转效率和稳定性.     

焦平面图像红外无线传输系统中边沿位置调制的低功耗实现

在焦平面图像红外无线传输系统中,通过引入边沿位置调制(EPM)方式来代替传统的脉冲位置调制方式,提高了传输带宽效率。提出了基于反熔丝FPGA的EPM调制低功耗实现方案,包括输入接口、缓冲器与RLL(5,12)编码状态机的设计,以及数据恢复、脉冲提取等EPM解调关键技术的解决方案。实验系统利用EPM调制方式,在24MHz带宽条件下实现了320×240像素视频数据的低功耗红外无线实时传输,促进了焦平面图像红外无线输出的进一步实用化。     

A novel pose and illumination robust face recognition with a single training image per person algorithm

In the real-world application of face recognition system, owing to the difficulties of collecting samples or storage space of systems, only one sample image per person is stored in the system, which is so-called one sample per person problem. Moreover, pose and illumination have impact on recognition performance. We propose a novel pose and illumination robust algorithm for face recognition with a single training image per person to solve the above limitations. Experimental results show that the proposed algorithm is an efficient and practical approach for face recognition.     

Optical system and lens design for Blu-ray disc optical pick-up

During the design process of Blu-ray disc optical pick-up (BD OPU), the optical system and the collimator lens design is especially important. This paper designs an optical system and some lenses for the BD OPU, including collimator lens, beam shaping lens for laser beam shaping, and cylinder lens for signal detecting. In this OPU, we use a triplet lens to collimate the laser beam. At the same time, we build a series of assembly jigs to make sure that each lens can be put into the OPU basement properly. At last, we get the reading spot image and S-curve photo of OPU, which can be used to read Blu-ray disc (BD).     

Stable anticipation synchronization in mutually coupled vertical-cavity surface-emitting lasers system

Two vertical-cavity surface-emitting lasers(VCSELs) are mutually coupled through a partially transparent mirror (PTM) placed in the pathway. The PTM plays the role of external mirror,which controls the feedback strength and coupling strength.We numerically simulate this system by establishing a visible SIMULINK model.The results demonstrate that the anticipation synchronization is achieved and it can tolerate some extent frequency detuning.Moreover,the system shows similar chaos-pass filtering effect on unidirectionally coupled system even both VCSELs are modulated.This system allows simultaneously bidirectional secure message transmission on public channels.     

Spectral anomalies and spectral switches of partially coherent and polychromatic light diffracted at an aperture

Inrecentyearsanewbranchofmodernphysicalopticscalledsingularoptics[1]hasbeendeveloped.In2002theworkinsingularopticswasextendedfrommonochromaticlighttospatiallyfullycoherentandpolychromaticlightbyGburetal.[2—4].Itwasfoundthat,whenaconverging,spatiallyfullycoherentandpolychromaticsphericalwaveisdiffractedatanaperture,anomalousspectralchangestakeplaceclosetozerosoftheintensityinthefarfield;i.e.thespectrumisredshiftedatsomepoints,blueshiftedatothers,andsplitintotwolineselsewhere.Thepredictionsofsp…     

Simple Entanglement Measure for Multipartite Pure States

A simple entanglement measure for multipartite pure states is formulated based on the partial entropy of a series of reduced density matrices. Use of the proposed new measure to distinguish disentangled, partially entangled, and maximally entangled multipartite pure states is illustrated.     

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.     

Analytical solutions for some defect problems in 1D hexagonal and 2D octagonal quasicrystals

We study some typical defect problems in one-dimensional (1D) hexagonal and two-dimensional (2D) octagonal quasicrystals. The first part of this investigation addresses in detail a uniformly moving screw dislocation in a 1D hexagonal piezoelectric quasicrystal with point group 6mm. A general solution is derived in terms of two functions φ ₁, φ ₂, which satisfy wave equations, and another harmonic function φ ₃. Elementary expressions for the phonon and phason displacements, strains, stresses, electric potential, electric fields and electric displacements induced by the moving screw dislocation are then arrived at by employing the obtained general solution. The derived solution is verified by comparison with existing solutions. Also obtained in this part of the investigation is the total energy of the moving screw dislocation. The second part of this investigation is devoted to the study of the interaction of a straight dislocation with a semi-infinite crack in an octagonal quasicrystal. Here the crack penetrates through the solid along the period direction and the dislocation line is parallel to the period direction. We first derive a general solution in terms of four analytic functions for plane strain problem in octagonal quasicrystals by means of differential operator theory and the complex variable method. All the phonon and phason displacements and stresses can be expressed in terms of the four analytic functions. Then we derive the exact solution for a straight dislocation near a semi-infinite crack in an octagonal quasicrystal, and also present the phonon and phason stress intensity factors induced by the straight dislocation and remote loads.