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941.
942.
The synergisic properties of docosa-5Z, 17Z-diene — one of the by-products of the synthesis of the synthetic cotton bollworm pheromone — have been revealed.A. S. Sadykov Institute of Bioorganic Chemistry, Academy of Sciences of the Republic of Uzbekistan, Tashkent, fax 627071. Translated from Khimiya Prirodnykh Soedinenii, No. 1, pp. 130–132, January–February, 1994.  相似文献   
943.
944.
The effect of addition of Re, Zr, Sc, and Sn on an aluminoplatinum catalyst in the reaction of dehydrogenation of propane was investigated. It was shown that addition of 0.2–0.5% Zr, Sc, or Re virtually does not alter the catalytic properties of the aluminoplatinum catalyst (APC); addition of 0.2% Sn increases the activity, selectivity, and stability of Pt/Al2O3. The amount of coke deposited on the APC after the first 5 min of work decreases by three times in the presence of Sn. The coke is more enriched with hydrogen than the other systems formed on the surface of Pt-Sn/Al2O3.Deceased.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 4, pp. 765–771, April, 1991.  相似文献   
945.
946.
Vanadium oxide surface studies   总被引:4,自引:0,他引:4  
The vanadium oxides can exist in a range of single and mixed valencies with a large variety of structures. The large diversity of physical and chemical properties that they can thus possess make them technologically important and a rich ground for basic research. Here we assess the present status of the microscopic understanding of the physico-chemical properties of vanadium oxide surfaces. The discussion is restricted to atomically well-defined systems as probed by surface techniques. Following a brief review of the properties of the bulk oxides the electronic and geometric structure of their clean single crystal surfaces and adsorption studies, probing their chemical reactivity, are considered. The review then focuses on the growth and the surface properties of vanadium oxide thin films. This is partitioned into films grown on oxide substrates and those on metal substrates. The interest in the former derives from their importance as supported metal oxide catalysts and the need to understand the two-dimensional overlayer of the so-called “monolayer” catalyst. On the single crystal metal substrates thin oxide layers with high structural order and interesting properties can be prepared. Particular attention is given to ultrathin vanadium oxide layers, so-called nano-layers, where novel phases, stabilised by the substrate, form.  相似文献   
947.
The crystal structure of 2-(carboxy-3-propyl)-3-amino-6-cyclohexylpyridazinium bromide has been determined by single-crystal X-ray diffraction techniques and refined by full-matrix least squares. The compound crystallized in the tri-clinic space groupP ¯1 witha=10.275(1),b=11.215(1),c=7.082(1) Å,=91.84(1),=102.21(1), =106.77(1)°, andZ=2. FinalR-factor is 0.045. The main structural results are very similar to the ones observed for the 6-phenyl analog. These two compounds are GABA-A antagonists.Ab initio molecular orbital calculations, with STO-3G and 4-31G basis sets, suggest that the exocyclic nitrogen accurately mimics the nitrogen atom of GABA.  相似文献   
948.
A pink-red air-stable, crystalline compound of empirical formula [Cu(Im)4(N-tsval)2] (Im=imidazole; ts=4-toluenesulfonyl group, hereafter abbreviated as tosyl;N-tsval=N-tosylvalinate monoanion) was synthesized and characterized by means of structural and spectroscopic measurements. The crystal structure of the compound was determined from three-dimensional diffractometer data. The crystals are monoclinic, space groupC2/c, a=18.952 (5),b=12.372 (2),c=17.594 (3) Å,=93.77 (2)°,Z=4. The structure was solved by the heavy-atom method and refined through least-squares calculations toR=0.035 for 2284 observed reflections. The coordination about the copper atom is elongated octahedral, with four imidazole molecules as equatorial ligands and two sulfonic oxygens in axial positions.  相似文献   
949.
950.
A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E t 1 = Ev + 0.25 eV and E t 2 = Ec – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.  相似文献   
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