The exponential characteristic of the Volterra integral operator with kernel depending on 2<Emphasis Type="Italic">N</Emphasis> variables

Exponential growth is estimated for integral operators with continuous periodic kernels of exponential type. The result is applied to the boundary-value problem for a general hyperbolic differential equation having periodic coefficients with Goursat boundary conditions. It is proved that the exponential characteristic for such a boundary-value problem has canonical form. __________ Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 38, Suzdal Conference-2004, Part 3, 2006.     

Slow cyclotron instability in a high-power backward-wave oscillator

The linear dispersion relation of a backward-wave oscillator (BWO), derived earlier by the authors, is modified to include effects of RF surface current at the beam-vacuum interface. This modified dispersion relation results in an unstable interaction between the slow cyclotron mode (SCM) and the structure mode in addition to the conventional Cherenkov instability caused by the slow space charge mode. Numerical analysis is then carried out using parameters of a BWO experiment at University of Maryland. Fine structure of the SCM instability is elucidated. The analysis indicates that BWO radiation would not be suppressed near cyclotron absorption in an infinitely long system.     

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.     

Numerical analysis of time-dependent Boussinesq models

In this paper we analyse numerical models for time-dependent Boussinesq equations. These equations arise when so-called Boussinesq terms are introduced into the shallow water equations. We use the Boussinesq terms proposed by Katapodes and Dingemans. These terms generalize the constant depth terms given by Broer. The shallow water equations are discretized by using fourth-order finite difference formulae for the space derivatives and a fourth-order explicit time integrator. The effect on the stability and accuracy of various discrete Boussinesq terms is investigated. Numerical experiments are presented in the case of a fourth-order Runge-Kutta time integrator.