Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

High quantum efficiency of intersubband transitions in coherent tunneling of electrons through asymmetric double-barrier structures

A converging perturbation series that can be summed analytically has been obtained for intersubband transitions of electrons coherently tunneling through the middle of a dimensionally quantized level in an asymmetric double-barrier structure in a high-frequency terahertz electric field. The possibility of a substantial increase in tunneling current accompanied by either absorption or emission of a photon has been demonstrated. The quantum efficiency of radiative transitions between dimensionally quantized levels can be up to 66%. Zh. éksp. Teor. Fiz. 112, 237–245 (July 1997)     

Temperature and frequency dependence of the spin-lattice relaxation times of E′1 centers in neutron-irradiated quartz glass

Results are reported for measurements of the spin-lattice relaxation times of E′₁ centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm⁻¹. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation of irradiation centers in crystalline quartz and quartz glass. Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997)     

Excitation of bulk elastic waves at the surfaces of piezoelectric crystals with 422,622 symmetry

The problem of exciting bulk elastic waves at the surface of a piezoelectric with symmetries 422,622 has been solved by a successive approximation method. In the approximation of a fixed electric field, created at the surface of the piezoelectric crystal by a two-electrode transducer, the distributions are found for the shear wave stress and the energy flux density in the far zone. The equivalent circuit parameters for a two-electrode radiator are determined taking account of the dynamic piezoelectric correction obtained in the second approximation. The equivalent circuit parameters and the transducer loss are treated for TeO₂ crystals. A realistic possibility of using surface transducers in the development of acousto-optic modulators in the s.h.f. region is shown. Tomsk State Academy of Control Systems and Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 8–15, January, 1997.     

Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.     

Increasing the accuracy of eigenvalue computation in the spectral problem

A simple method is proposed for increasing the accuracy of computation of the eigenvalues of elliptic operators, which does not require high-order accurate schemes.Translated from Vychislitel'naya i Prikladnaya Matematika, No. 63, pp. 63–68, 1987.     

Comparison of stimulated-emission-pumping fluorescence dip spectrometry and conventional fluorescence spectrometry in application to supersonic jet spectrometry

Summary A supersonic jet spectrum of 9,10-dichloroanthracene is measured by stimulated-emission-pumping fluorescence dip spectrometry and conventional fluorescence spectrometry. The performance obtained is compared for these spectrometric methods, providing same information concerned with the energy level of the ground state. The former is more preferential for measurement of a high-resolution spectrum, since the spectral resolution is determined by the linewidth of the dumping laser. On the other hand, the latter is more preferential for measurement with better sensitivity at the expense of the spectral resolution, since the fluorescence throughput can be improved by increasing the slit width of the monochromator.Dedicated to Professor Dr. Wilhelm Fresenius on the occasion of his 80th birthday     

Porphyrins 34. Mass spectrometric study of ethane- and ethylene-bis-porphyrins

The mass spectral behavior of 1, 2-di (mesoetioporphyr inyl-1)- and 1, 2-di (mesooctaethylporphyrlnyl) ethanes and ethylenes, their Cu and Ni complexes, as well as Ni Schiff bases of 1, 2-di (mesooctaethylporphyrinyl)ethane complexes, under ionization by electron impact and bombardment by accelerated atoms, was studied. Peaks of molecular ions, for which the basic decomposition pathways were established on the basis of an analysis of the parent and daughter ions, were observed in the electron impact mass spectra of all these compounds.For Communication 29, see [1].Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 1, pp. 24–29, January, 1994.     

Interaction of 4-aminobenzofurazan with aryldiazonium salts

The reaction of 4-aminobenzofurazan with aryldiazonium salts leads to the formation of 4-amino-5-aryl-azobenzofurazans and 5-amino-2-aryl-4-nitroso-2H-benzotriazoles, products of the rearrangement of the initially formed 4-amino-7-(arylazo)benzofurazans. Oxidation of the benzofurazan as well as of the triazole derivatives gives 7-aryl-1,2,3-triazol[4,5-e]benzofurazans. The chemical properties of some of the compounds obtained have been investigated.Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 10, pp. 1432–1438, October, 1994. Original article submitted July 25, 1994.