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941.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
942.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
943.
H. Akimune T. Yamagata S. Nakayama M. Fujiwara K. Fushimi K. Hara K. Y. Hara K. Ichihara K. Kawase K. Matsui K. Nakanishi A. Shiokawa M. Tanaka H. Utsunomiya M. Yosoi 《Physics of Atomic Nuclei》2004,67(9):1721-1725
Trinucleon molecular structures in 6He and 6Be were investigated by using the 6Li(7Li, 7Be)6He reaction at 455 MeV and 6Li(3He, t)6Be reaction at 450 MeV, respectively. Binary decays into t + t from a broad state at E x =18.0±1.0 MeV in 6He and into 3He + 3He from one at E x =18.0±1.2 MeV in 6Be, respectively, were observed by measuring trinucleon cluster decays in coincidence with reaction particles. The branching ratios for binary decay were estimated to be about 0.7 for 6He and 6Be. These large branching ratios show that a trinucleon cluster state exists as an isobaric partner around E x =18 MeV in 6He and 6Be. 相似文献
944.
A. G. Milekhin A. I. Nikiforov M. Yu. Ladanov O. P. Pchelyakov S. Schulze D. R. T. Zahn 《Physics of the Solid State》2004,46(1):92-96
This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO2 layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed. 相似文献
945.
946.
The incubation-period-based criterion for fracture is considered in terms of the Zhurkov kinetic model of fracture. Within the kinetic model, fracture is treated as a continuously developing process, which starts immediately after the application of a tensile load to a sample and consists in breaking of the interatomic bonds and gradual accumulation of broken bonds in the material in the course of a fracture test. For certain materials, the inclusion of the thermal-fluctuation mechanism for fracture in the incubation-period-based criterion significantly affects the position of the static branch of the time dependence of strength. Time dependences of strength are calculated for a number of materials. The experimental data are analyzed using the structural-time criterion for fracture, which allows one to obtain a unified time dependence of strength for quasi-static and high-rate short-term loadings. The temperature dependence of the incubation period (latent time) is calculated analytically, and a relation is found between the latent fracture time and the thermal vibration frequency of atoms. 相似文献
947.
O. P. Bobrov S. N. Laptev H. Neuhäuser V. A. Khonik K. Csach 《Physics of the Solid State》2004,46(10):1863-1867
Isochronous relaxation of tensile stresses is measured in a bulk Pd40Cu30Ni10P20 metallic glass in the initial state and after certain thermal treatments. The results of measurements are used to find the energy spectrum of irreversible structural relaxation, from which the temperature dependence of shear viscosity is then calculated. This dependence is also found independently from measurements of creep in the same glass. The calculated viscosity is shown to agree well with the experimental data. 相似文献
948.
Teys S. A. Talochkin A. B. Romanyuk K. N. Olshanetsky B. Z. 《Physics of the Solid State》2004,46(1):80-84
Physics of the Solid State - The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the... 相似文献
949.
V. V. Dvorkin N. N. Dzbanovskii A. F. Pal’ N. V. Suetin A. Yu. Yur’ev P. Ya. Detkov 《Physics of the Solid State》2004,46(4):729-732
A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 1010 cm-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry. 相似文献
950.
G. Busiello R. V. Saburova V. G. Sushkova G. P. Chugunova 《Physics of the Solid State》2004,46(2):316-325
The ageing effect is studied analytically in a disordered quantum system interacting with its surroundings and subjected to an external ac magnetic field. Energy dissipation is due to the interaction of the system with a set of independent harmonic oscillators, imitating a quantum thermal bath. Dynamic equations for the autocorrelation function and linear-response function are derived using the method of closed-path integrals. The effect of an external field is studied on the correlation function and response in the spin-glass and paramagnetic phases. Both functions are found to depend on the spin interaction strength. 相似文献