Study of perfection of layers of AlGaSb(AS) solid solution

Studies have been carried out on the perfection of then-Al_xGa_1–xSb_1–yAs_y (0.12x0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt dislocations with a density of up to 5 · 10⁵ cm^–2 is formed while in thick layers (h 20 m) a network of misfit dislocations parallel to the heteroboundary is formed. The time required to dissolve a weighed amount of GaAs in the melt is shown to be of major importance for obtaining layers of a solid solution that are isoperiodic with the substrate. The entry of arsenic only in the initial portion of the epitaxial layer can reduce the dislocation density in the layer without decreasing the measured value of Aa. Dissolution of a weighed amount of GaAs in a Ga + Sb melt for two hours at T=730–750°C is sufficient to obtain layers of Al_xGa_1–xSb_1–yAs_y solid solution that are isoperiodic with the substrate.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 84–89, January, 1988.In conclusion, we thank L. V. Druzhinina for useful discussions as well as Z. V. Korotchenko, L. S. Khludkova, and F. S. Kim for assistance in the performance of the experiments.     

A finiteness criterion for the number of rational points for twisted weil elliptic curves

We consider the Weil elliptic curve E/ℚ and let be its canonical L-series. Admitting the Birch-Swinnerton-Dyer conjecture and fixing the curve E, a criterion is given for the finiteness of the group E_D(ℚ) for twisted elliptic curves E_D, defined by the condition

The minimum area of a surface with prescribed boundary contour in a pseudoeuclidean space

LetE ^{n, k} be a pseudoeuclidean space with linear elementdx ₁ ² ++dx _n–k ² –dx _n–k ^+1/2 ––dx _n ² . The area of a smooth two-dimensional surface inE ^{n, k} is defined by , whereE, F, andG are the coefficients of the first fundamental form of the surface andD is the region of variation of the parametersu andv. The following theorem is proved: LetL be a piecewise smooth closed curve inE ^{n, k} (1kn–1). Then there exists a two-dimensional piecewise smooth surface of arbitrarily small area bounded by the curveL. 3 figures.Translated from Ukrainskií Geometricheskií Sbornik, No. 30, 1987, pp. 18–22.     

On the measure of the spectrum for the almost Mathieu operator

We obtain partial results on the conjecture that for the almost Mathieu operator at irrational frequency, , the measure of the spectrum,S(, , )=|4–2|. For ||2 we show that if _n is rational and irrational, then .Dedicated to Res Jost and Arthur WightmanResearch partially supported by U.S. NSF grant number DMS-8801918 and by BSF under grant number 88-00325     

Area-preserving diffeomorphisms and higher-spin algebras

We show that there exists a one-parameter family of infinite-dimensional algebras that includes the bosonicd=3 Fradkin-Vasiliev higher-spin algebra and the non-Euclidean version of the algebra of area-preserving diffeomorphisms of the two-sphereS ² as two distinct members. The non-Euclidean version of the area preserving algebra corresponds to the algebra of area-preserving diffeomorphisms of the hyperbolic spaceS ^1,1, and can be rewritten as . As an application of our results, we formulate a newd=2+1 massless higher-spin field theory as the gauge theory of the area-preserving diffeomorphisms ofS ^1,1.     

QCD perturbation theory in the temporal gauge

In this paper we present a non-trivial check of the consistency of the quantization of a gauge theory with fermions (QCD) in the temporal gauge. We use the approach based on the finite time Feynman propagation kernel, in which the Gauss law is imposed as a constraint on the states by means of a functional integration over all the time independent gauge transformations acting on the boundary values of the fields. We spell out in detail the “Feynman rules” when fermions are present and we compute, as an example, the gauge invariant correlation function $$\begin{gathered} G(t) = \left\langle {\bar \psi (0,t)(\gamma _5 \gamma _0 )\frac{{1 - \gamma _0 }}{2}P} \right. \hfill \\ \left. { \cdot \exp \left( {ig\int\limits_0^t {A_0 (0,t')dt'} } \right)(\gamma _5 \gamma _0 )^ + (0,0)} \right\rangle \hfill \\ \end{gathered} $$ up to orderg ², obtaining the expected result.     

Inclusive\bar K^{0*} (892) andK 0*(892) production on silicon by 200 GeVK − andπ −

The production of the neutralK ^? (892) resonances by 200 GeVK ^? andπ ^? has been studied over the kinematic range 0.0<x _f<1.0 andp _t ² <5.0 GeV². Longitudinal and transverse momentum distributions are presented. In addition the decay angular distributions inK ^? fragmentation to \(\bar K^{0*} \) have been investigated.     

Plane logarithmic spiral with peripheral excitation

Conclusion In a planar logarithmic spiral excited at its periphery there simultaneously exist surface, quasieffluent, and radiated waves; the phase velocities of surface and quasieffluent waves are identical and depend on the reduced radius k, which defines the regions of normal and anomalous dispersion; in the region kn the surface wave transforms to a radiated one by means of the quasieffluent; the directional pattern differs little from that for central excitation, with ellipticity coefficient of a spiral open at the center varying from 0.7 to 0.9 over a 1:2 frequency range; the input impedance depends weakly on the presence of reflection at the center of the spiral, is of an oscillating character, and changes more intensely than for central excitation.Khar'kov State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 33, No. 1, pp. 78–84, January, 1990.     

High dose iron implantation into silicon and metals

High dose implantations of Fe into metals and semiconductors have been performed with beam energies up to 1 MeV at the UNILAC-injector at GSI. Unusual high concentrations of 70 atomic % for Si and 20 atomic % for Cu have been obtained, with doses of 10¹⁸ Fe/cm² in the case of Si and several 10¹⁷ Fe/cm² in the case of Cu. For Si the thickness of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relative high particle energies. Samples have been characterized using several complementary methods (Mössbauer Spectroscopy (MS), Rutherford Backscattering Spectroscopy (RBS), Auger electron Spectroscopy (AES). Scanning Electron Microscopy (SEM), X-ray diffraction (XRD)).     

Sub-megabar Mössbauer studies using diamond anvil cells

The development and the use of the diamond anvil cell for Mössbauer Spectroscopy (MS) to pressures nearing 100 GPa are discussed. Three types of cells and their typical performance are given. Pressure calibration, hydrostatic media, gasketing, collimation, -ray absorption, and sample size for MS are reviewed. New MS results showing hysteresis in the room temperature high pressure transition in iron and showing the rapid rise ofT _N in NiI₂ with pressure are presented.