Effect of spin–orbit coupling on spin transport at graphene/transition metal interface

In spite of large spin coherence length in graphene due to small spin–orbit coupling, the created potential barrier and antiferromagnetic coupling at graphene/transition metal (TM) contacts strongly reduce the spin transport behavior in graphene. Keeping these critical issues in mind in the present work, ferromagnetic (Co, Ni) nanosheets are grown on graphene surface to elucidate the nature of interaction at the graphene/ferromagnetic interface to improve the spin transistor characteristics. Temperature dependent magnetoconductance shows unusual behavior exhibiting giant enhancement in magnetoconductance with increasing temperature. A model based on spin–orbit coupling operated at the graphene/TM interface is proposed to explain this anomalous result. We believe that the device performance can be improved remarkably tuning the spin–orbit coupling at the interface of graphene based spin transistor. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Relativistic Shifted-l Expansion Technique for Dirac and Klein-Gordon Equations

The shifted-l expansion technique (SLET) is extended to solve for Dirac particle trapped in spherically symmetric scalar and/or kvector potentials. A parameter λ = 0, l is introduced in such a way that one can obtain the Klein-Gordon (KG) bound states from Dirac bound states. The 4-vector Coulomb, the scalar linear, and the equally mixed scalar and 4-vector power-law potentials are used in KG and Dirac equations. Exact numerical results are obtained for the Cvector Coulomb potential in both KG and Dirac equations. Highly accurate and fast converging results are obtained for the scalar linear and the equally mixed scalar and 4-vector power-law potentials.     

RSOS Models and Jantzen–Seitz Representations of Hecke Algebras at Roots of Unity

A special family of partitions occurs in two apparently unrelated contexts: the evaluation of one-dimensional configuration sums of certain RSOS models, and the modular representation theory of symmetric groups or their Hecke algebras H_m. We provide an explanation of this coincidence by showing how the irreducible H_m-modules which remain irreducible under restriction to H_{m_1} (Jantzen–Seitz modules) can be determined from the decomposition of a tensor product of representations sl_n.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Form factors in the presence of integrable defects

Form factor axioms are derived in two dimensional integrable defect theories for matrix elements of operators localized both in the bulk and on the defect. The form factors of bulk operators are expressed in terms of the bulk form factors and the transmission factor. The structure of the form factors of defect operators is established in general, and explicitly calculated in particular, for the free boson and for some operator of the Lee–Yang model. Fusion method is also presented to generate boundary form factor solutions for a fused boundary from the known unfused ones.     

Effect of Host Medium on the Fluorescence Emission Intensity of Rhodamine B in Liquid and Solid Phase

In this work, we study the effect of concentration, host medium, PH and phase states on the fluorescence emission from the laser dye Rhodamine B pumped by UV laser as exited source. The polymethylmethacrylate PMMA is used as a host medium in case of solid phase samples while, ethanol and Tetrahydrofuran (THF) are used in case of a liquid one. Laser Induced Fluorescence (LIF) technique was used to study the fluorescence properties of both cases of liquid and thin film solid-state samples. In addition, the Dual Thermal Lens (DTL) technique was used to study the quantum yield of these samples. The concentrations of Rhodamine B in ethanol as solvent between 2 × 10⁻² M and 5 × 10⁻⁶ M were studied. The maximum fluorescence emission is observed at concentration of Rhodamine B C = 3 × 10⁻⁴ M. Comparison studies were investigated for different host medium such as ethanol, THF, PMMA in liquid phase state and PMMA in solid phase state. The measurements revealed that, the behavior of both phases state was analogous. Rhodamine B/PMMA thin film sample by ratio of 4:1 and thickness 0.12 mm was found to have the best photostability sample with a quantum yield about ≈0.82.     

The non-isotropic character of electric and dielectric properties of ammonium zinc chloride crystal

The dielectric constant, ε, and the d.c. conductivity, σ, were measured along the a-, b- and c-axes of (NH₄)₂ZnCl₄ (AZC) crystal in the 300-450 K temperature range. Crystals of AZC grown from aqueous solutions containing excess of ZnCl₂ were used. The value of the dielectric permittivity of AZC is extremely small compared to other ferroelectric crystals. Pronounced broad or step-like peaks at the phase transition temperatures were detected along the a- and b-axes, while ε along the c-axis is temperature independent up to the end of the measuring range. Reciprocal of the dielectric permittivity in the range of the commensurate to incommensurate phase transition obeys a relation similar to the Curie-Weiss law that is valid for second order ferroelectric/paraelectric phase transitions. The constants of the proposed relationship applied to the cooling run are given. The J-E characteristics along the three crystallographic axes were measured in the normal, incommensurate, commensurate and antiferroelectric phases. Hence, the type of conduction mechanism has been estimated. Parameters of Poole-Frenkel and Richardson-Schottky types of conduction mechanism have been determined. The effect of applied electric field on the conductivity measurement was also tested. Conductivity anomalies with different character were observed at the phase transition temperatures. The lnσ−1000/T dependence revealed thermal activation energy of conduction along the a-, b- and c-axes with different values in different phases of AZC.     

The effect of anti-reflection coating of porous silicon on solar cells efficiency

Anti-reflection coatings of solar cells have been fabricated using different techniques. The techniques used include SiO₂ thermal oxidation, ZnO/TiO₂ sputtering deposition and porous silicon prepared by electrochemical etching. Surface morphology and structural properties of solar cells were investigated by using scanning electron microscopy and atomic forces microscopy. Optical reflectance was obtained by using optical reflectometer. I-V characterizations were studied under 80 mW/cm² illumination conditions. Porous silicon was found to be an excellent anti-reflection coating against incident light when it is compared with another anti-reflection coating and exhibited good light-trapping of a wide wavelength spectrum which produced high efficiency solar cells.