Membrane introduction mass spectrometry

An overview of membrane introduction mass spectrometry (MIMS) is presented and comparisons are made with other direct sample introduction techniques. Special attention is given to the unique advantages and the limitations of newer variants on the MIMS technique, including affinity MIMS, reverse-phase and trap MIMS. The salient features of the interfaces used in MIMS are summarized and the various membrane materials commonly used are delineated. The applicability of MIMS is illustrated via discussion of

1. (i) bioreactor monitoring (represented by yeast fermentation),

2. (ii) environmental monitoring (illustrated by analysis of contaminated ground water samples) and

3. (iii) on-line chemical reaction monitoring (exemplified by the photolysis of aryl esters).

The applicability of MIMS to the analysis of environmental samples, including complex mixtures in water, air and soil, is noted.     

Consecutive reactions of diethoxydimethylsilane and triethoxymethylsilane with methoxide ions in methanol solution

The consecutive reactions of (CH₃)₂Si(OC₂H₅)₂ and CH₃Si(OC₂H₅)₃ with methoxide ions were investigated in methanol solutions. The reverse transesterification reactions with ethoxide ions could be neglected in both cases since the concentration of ethoxide in methanol solution was assumed to be low due to the fast equilibrium reaction C₂H₅O^? + CH₃OH ? C₂H₅OH + CH₃O^?. The progress of the reactions was followed by monitoring the formation of ethanol with a Fourier-transform infrared spectrometer. All rate constants were determined at 295 K. The reactions between the dialkoxydimethylsilanes and methoxide ions were assumed to consist of two consecutive steps that can be represented by the net reaction; (CH₃)₂Si(OC₂H₅)₂ + 2CH₃O^? → (CH₃)₂Si(OCH₃)₂ + 2C₂H₅O^?. The two consecutive rate constants were established as 1.93 ± 0.12M^?1s^?1 and 1.00 ± 0.12M^?1s^?1, respectively. The consecutive rate constants for the reactions between the trialkoxymethylsilanes and methoxide ions can be written according to the total reaction; CH₃Si(OC₂H₅)₃ + 3CH₃O^? → CH₃Si(OCH₃)₃ + 3C₂H₅O^?. The three rate constants corresponding to each consecutive step were established as 1.12 ± 0.09 M^?1s^?1, 0.82 ± 0.10 M^?1s^?1, and 0.51 ± 0.06 M^?1s^?1, respectively. © 1995 John Wiley & Sons, Inc.     

The Systematics of Muonium Hyperfine Constants

The hyperfine constants for muonium in elemental and binary inorganic solids suggest formation of three different families of defect centre, with distinct electronic structures. The overall range of values, spanning nearly five orders of magnitude, and their correlation with host properties such as band gap and electron affinity, reveal a deep-to-shallow instability which has profound implications for the electrical properties of hydrogen impurity in electronic materials, both semiconducting and dielectric.     

Completeness and compactness for varieties over a local field

This paper shows that for a local field K, a subfield k ⊂ K and a variety X over k, X is complete if and only if for every finite field extension Kʹ | K, the set X(Kʹ) is compact in its strong topology. The author likes to thank Florian Pop, Jakob Stix, Stefan Wewers, Gunther Cornelissen and his own parents for their support. Received: 13 April 2006     

Potent New Heterogeneous Asymmetric Catalysts

A set of new, air‐stable, Rh^I‐based heterogeneous asymmetric hydrogenation catalysts have been synthesised, characterised, and tested. Individual members of this new family all exhibit good enantioselectivity.     

Tunable narrow-band infrared emitters from hexagonal lattices

In this work, we present both the theoretical basis as well as supporting experimental measurements for development of a novel mid-infrared thermally stimulated narrow band emitter with a spectral bandwidth of less than 10%. To achieve this, we utilize a metallized-surface 2D photonic crystal of air voids in a silicon background with hexagonal structure symmetry. Our results are based on the generation of discrete surface plasmon (SP) modes in the thin metallized layer residing on the top surface. This yields a series of adequately spaced discrete peaks in the reflection spectrum, dominated by a single sharp feature corresponding to the lowest plasmon order, in an otherwise uniform highly reflective spectrum (>90%) over most of the IR spectrum. This, in turn, gives rise to a sharp absorption feature with a correspondingly narrow thermal emission peak in the emission spectrum. Transfer matrix calculations simulate well both the position and strengths of the absorption peaks. By altering the period of the surface photonic lattice, the SP peak and emissive band can be tuned to the desired wavelength. These devices promise a new class of tunable infrared emitters with high power in a narrow spectral bandwidth. Such narrow band sources are critical to achieving high efficiency gas sensors.