Automated and rapid online determination of 15N abundance and concentration of ammonium, nitrite, or nitrate in aqueous samples by the SPINMAS technique

On the basis of the principle of reaction continuous-flow quadrupole mass spectrometry, an automated sample preparation unit for inorganic nitrogen (SPIN) species was developed and coupled to a quadrupole Mass Spectrometer (MAS). The SPINMAS technique was designed for an automated, sensitive, and rapid determination of 15N abundance and concentration of a wide variety of N-species involved in nitrogen cycling (e.g. NH4+, NO3-, NH2OH etc.). In this paper, the SPINMAS technique is evaluated with regard to the determination of 15N abundance and concentration of the most fundamental inorganic nitrogen compounds in ecosystems such as NH4+, NO2-, and NO3-. The presented paper describes the newly developed system in detail and demonstrates the general applicability of the system. For a precise determination of 15N abundance and concentration, a minimum total N-amount of 10 microg NH4+ - N, 0.03 microg NO2- - N, or 0.3 microg NO3- - N has to be supplied. Currently, the SPINMAS technique represents the most rapid and only fully automated all-round method for a simultaneous determination of 15N abundance and total N-amount of NH4+, NO2-, or NO3- in aqueous samples.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.     

Operation of a Raman laser in bulk silicon

A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.     

Unbounded Entropy in Spacetimes with Positive Cosmological Constant

In theories of gravity with a positive cosmological constant, we consider product solutions with flux, of the form (A)dS _p ×S ^q . Most solutions are shown to be perturbatively unstable, including all uncharged dS _p ×S ^q spacetimes. For dimensions greater than four, the stable class includes universes whose entropy exceeds that of de Sitter space, in violation of the conjectured N-bound. Hence, if quantum gravity theories with finite-dimensional Hilbert space exist, the specification of a positive cosmological constant will not suffice to characterize the class of spacetimes they describe.     

Diffractive beam splitter characterization via a power-recycled interferometer

We used the high-precision laser interferometer technique of power recycling to characterize the optical loss of an all-reflective grating beam splitter. This beam splitter was used to set up a Michelson interferometer with a power-recycling resonator with a finesse of 883. Analyzing the results obtained, we determined the beam splitter's total optical loss to be (0.193+/-0.019)%. Low loss all-reflective beam splitters might find application in future high-power laser interferometers for the detection of gravitational waves.     

Tuning of optical resonances in asymmetric microtube cavities

We tune optical resonances in rolled-up SiO/SiO(2) microtube cavities by gradually modifying the tube structure through asymmetrical postdeposition of SiO(2). Spectral blueshifts followed by redshifts of the resonant modes are observed in a thin-walled microtube (tube-I), which is attributed to a competition between shape deformation and effective increase of tube wall thickness. In contrast, only a monotonic redshift is detected when asymmetrical deposition is performed on a thick-walled microtube (tube-II). Distinct wavelength-dependent tuning was revealed in both kinds of tubes. Numerical calculations based on perturbation theory are carried out to explain and confirm the experimental results.