The preparation of nanophase tungsten carbide powder with zeolite-X catalysts

The reduction–carburization of tungsten trioxide (WO₃) under carbon monoxide flow was studied in the temperature range of 300–750 °C. The reduction–carburization of WO₃ was improved by mechanically mixing with zeolite-HX, -NaX and -KX. The interaction between cation in zeolite-X and oxygen in WO₃ affected the improvement of the reduction–carburization of WO₃ to WC. Moreover, the improved reduction–carburization of WO₃ could lead to the decrease of reaction temperature. Because the particle size of WC is in contact with a reaction temperature, the nanophase WC can be prepared at low temperature. In particular, the particle size of WC was controlled by reaction temperature. The particle sizes of produced WC at 550, 650 and 700 °C were 25, 50 and 100 nm respectively.     

The circular and elliptic white-light dark spatial solitons in a photovoltaic self-defocusing nonlinear medium

We observed circular white-light dark spatial solitons in photovoltaic self-defocusing LiNbO₃:Fe crystal using an ordinary incandescent lamp as light source (a line source) with the filament of the bulb parallel to the crystalline c axis. Besides the above condition, the formation of the elliptic soliton needs an additive condition that the crystalline c axis is parallel to the minor axis of dark elliptic spot.     

从电子上看康普顿效应

在康普顿效应中，散射光子与入射光子的频率不同，但在电子静止的参考系，可以证明光子的频率在碰撞前后相同。     

Misalignment tolerance analysis and fabrication for highly efficient parallel optical-electrical convertor module

A compact, highly efficient, and passively assembled parallel optical-electrical convertor module (POECM) for active optical cable application is proposed. This paper presents our POECM structure, optical design simulation results, fabrication process, and data transmission test results, in sequence. The POECM has a compact size of \(18.5\hbox {mm} \times 10\hbox {mm} \times 2.8\hbox {mm}\) . We confirm a data rate of total throughput at 21.6 Gbps ( \(5.4\hbox {Gbps} \times 4\) channels) with a bit error rate of less than \(10^{-12}\) .     

Three-dimensional GaN-Ga2O3 core shell structure revealed by x-ray diffraction microscopy

In combination of direct phase retrieval of coherent x-ray diffraction patterns with a novel tomographic reconstruction algorithm, we, for the first time, carried out quantitative 3D imaging of a heat-treated GaN particle with each voxel corresponding to 17 x 17 x 17 nm3. We observed the platelet structure of GaN and the formation of small islands on the surface of the platelets, and successfully captured the internal GaN-Ga2O3 core shell structure in three dimensions. This work opens the door for nondestructive and quantitative imaging of 3D morphology and 3D internal structure of a wide range of materials at the nanometer scale resolution that are amorphous or possess only short-range atomic organization.     

A voltage-controlled chaotic oscillator based on carbon nanotube field-effect transistor for low-power embedded systems

This paper presents a compact and low-power-based discrete-time chaotic oscillator based on a carbon nanotube field-effect transistor implemented using Wong and Deng＇s well-known model. The chaotic circuit is composed of a nonlinear circuit that creates an adjustable chaos map, two sample and hold cells for capture and delay functions, and a voltage shifter that works as a buffer and adjusts the output voltage for feedback. The operation of the chaotic circuit is verified with the SPICE software package, which uses a supply voltage of 0.9 V at a frequency of 20 kHz. The time series, frequency spectra, transitions in phase space, sensitivity with the initial condition diagrams, and bifurcation phenomena are presented. The main advantage of this circuit is that its chaotic signal can be generated while dissipating approximately 7.8 μW of power, making it suitable for embedded systems where many chaos-signal generators are required on a single chip.     

Large coercivity and unconventional exchange coupling in manganese-oxide-coated manganese gallium nanoparticles

The microstructures and magnetic properties of nanoparticles, each composed of an antiferromagnetic （AFM） manganese-oxide shell and a ferromagnetic-like core of manganese-gallium （MnGa） compounds, are studied. The coreshell structure is confirmed by transmission electron microscope （TEM）. The ferromagnetic-like core contains three kinds of MnGa binary compounds, i.e., ferrimagnetic （FI） DO22-type MnaGa, ferromagnetic （FM） Mn8Gas, and AFM DO19-type Mn3Ga, of which the first two correspond respectively to a hard magnetic phase and to a soft one. Decoupling effect between these two phases is found at low temperature, which weakens gradually with increasing temperature and disappears above 200 K. The exchange bias （EB） effect is observed simultaneously, which is caused by the exchange coupling between the AFM shell and FM-like core. A large coercivity of 6.96 kOe （1Oe = 79.5775 A·m^-1） and a maximum EB value of 0.45 kOe are achieved at 300 K and 200 K respectively.     

Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

离线测量钍快中子裂变反应率方法

钍快中子裂变反应率是钍铀燃料循环中的重要数据.为了测量基于聚变-裂变混合能源堆包层概念设计的钍样品在宏观中子学装置中的钍快中子裂变数据,发展了钍快中子裂变率的离线活化γ测量方法.通过测量232Th裂变碎片85mKr的β衰变产物85Rb发射的151.16 keV特征γ射线,并结合钍裂变产额数据,获得了钍样品装置中232Th裂变反应率的分布.详细介绍了此方法的原理和影响因素,并利用14 MeV的D-T中子源在贫铀球壳中开展了校验实验,实验不确定度为5.3%—5.5%.采用MCNP5程序和ENDF/B-VI及ENDF/B-VII数据库模拟计算的结果与实验结果在实验不确定度内基本符合,这证明该方法能够有效地模拟装置中232Th裂变反应率.