Reduction of nonholonomic variation problems to isoperimetric ones and connections in principal bundles

Translated from Matematicheskie Zametki, Vol. 49, No. 5, pp. 37–44, May, 1991.     

Interference inspection of the aspherical components of an objective for nanolithography

Methods and schemes to inspect the EUV mirror shape are developed on the basis of a point diffraction interferometer with computer processing of interferograms. A measurement accuracy to within 0.001 of a wavelength in the visual range is achieved.     

Calculation of the Radiating Characteristics of a Thermodynamically Nonuniform Gas Medium

Passive methods of remote analysis of waste gases of industrial enterprises and aircrafts engines and gases ejected in eruptions of volcanos, in fires, and in other processes disturbing the atmosphere are now of limited utility because of the lack of well-developed mathematical techniques for solving the inverse problems of gas analysis. However, the advantage of these methods is obvious, since the equipment is limited to a receiving device and the gas medium serves as a radiator. At the same time, in modern techniques, the interpretation of measurements of emissivities of gases is performed using a phenomenological approach such that experimental data on radiation characteristics of various objects are approximated by simple polynomial relations whose coefficients are determined by minimization methods. This approach does not allow one to investigate the mechanism of the processes occurring in a radiating medium and gives no way of solving the inverse problem of monitoring the composition and thermodynamic parameters of a medium which disturbs the atmosphere by thermal effects. In elaborating theoretical methods of gas analysis, the elaboration of the direct problem of calculation of radiating characteristics of gases is of importance, since it is not clear how the emissivity of a gas medium depends on its thermodynamic parameters. This paper is devoted to the above problem. Here, the error is estimated that arises in modeling a nonuniform gas medium with an actual temperature distribution, which linearly depends on coordinate, by a uniform gas layer. It is shown that the difference between the radiation intensities calculated for uniform and nonuniform media can be significant in the practically important case where the recording device is in a zone of normal temperatures. This implies that the error of reconstruction of the spectroscopic and molecular parameters of gaseous compounds from high-temperature measurements of the radiating and absorbing characteristics should take into account the thermodynamic nonuniformity of the medium.     

The effect of olefinic terminal chains on the mesomorphic properties of 4,4'-disubstituted diphenyldiacetylenes

New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

New Heat-Resistant Polyimidates Derived from Bisphenols and Mono- and Dicarboxylic Acid Imidoyl Chlorides

New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined.     

Two-limit problems for almost semicontinuous processes defined on a Markov chain

We consider almost upper-semicontinuous processes defined on a finite Markov chain. The distributions of functionals associated with the exit of these processes from a finite interval are studied. We also consider some modifications of these processes. __________ Translated from Ukrains’kyi Matematychnyi Zhurnal, Vol. 59, No. 4, pp. 555–565, April, 2007.