Mg 2p shallow core-level and local atomic structure of i-ZnMgRE quasicrystals

We present a detailed analysis of the Mg 2p shallow core-levels measured on icosahedral single-grain ZnMgY, ZnMgHo, and ZnMgEr quasicrystals during a photoelectron microscopy study. The synchrotron radiation photoemission measurements were performed on in situ cleaved samples at a pressure of 10⁻¹⁰ mbar and at low temperature, typically 90-150 K. The Mg 2p photoemission lines are essentially broadened as compared to those of the Mg 2p spin-orbit doublet recorded on the Zn₂Mg crystalline Laves phase. The broadening is associated to the coordination shifts of the Mg 2p level due to the inequivalent magnesium sites in the quasicrystalline lattice. The coordination shifts are calculated on the basis of i-ZnMg(Ho, Y) atomic structure data, recently determined from the pair distribution function analysis. The coordination shifts obtained are up to 0.2 eV. The Mg 2p experimental spectral intensity is nicely reproduced by a superposition of coordination-shifted Mg 2p spin-orbit doublets.     

Taylor-Galerkin algorithms for viscoelastic flow: Application to a model problem

Coupled and decoupled Taylor-Galerkin algorithms are considered for viscoelastic flow and a model problem—transient startup Poiseuille flow in a channel under a fixed pressure gradient. All algorithms reproduce the steady-state solutions and are stable at high elasticity numbers (E). For a fixed mesh, the coupled and decoupled versions (TGC and TGD) give exceptional time-accuracy at low elasticity numbers [to within O(1%) at E = 1] and reasonable accuracy at high elasticity numbers [to within O(10%) at E = 10, 100]. By definition, the decoupled false-transient scheme (TGF), which uses different time scales for velocity and stress time stepping, provides a poor transient history. Where the main requirement is to compute a steady-state algorithm efficiency is crucial. The TGF scheme attains a steady state between six to eight times faster than does the TGC scheme, and the latter is over twice as fast as the TGD form. © 1994 John Wiley & Sons, Inc.     

Inhomogeneities in silicon p-n-junctions

Latent macroscopic defects in silicon are detected by electrical and electron microscope measurements. They lead to anomalous temperature dependence of the Fermi level position and growth in the hole capture coefficient. A level with energy of 0.55 eV measured from the conduction zone controls the recombination process. It is proposed that macroscopic defects develop upon association of oxygen-silicon vacancy complexes. Action of an electron beam leads to reversible changes which increase upon multiple scanning, affecting the value of the diffusion length.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 71–75, April, 1991.