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221.
E. N. Sobol’ O. I. Baum A. V. Bol’shunov V. I. Sipliviy N. Yu. Ignat’eva O. L. Zakharkina V. V. Lunin A. I. Omel’chenko V. A. Kamenskiy A. V. Myakov 《Laser Physics》2006,16(5):735-740
A new approach to alterations in eye refraction upon nondestructive laser action on the sclera and cornea is studied. It is demonstrated in in vivo experiments on rabbit eyes that sequential laser irradiation of the sclera and cornea yields a significant alteration in the eye refraction. The collagen structure of the sclera and cornea is studied after the nondestructive laser action with noninvasive polarization-sensitive optical coherence tomography. It is demonstrated that collagen fibers that provide for the cornea tension and applanation partially survive in the zone of the local denaturation of sclera. An irradiation mode that corresponds to an increase in the cornea’s plasticity and does not cause visible structural changes is chosen. The simplest theoretical model for alterations in the eye refraction upon the nonablative laser action on sclera is analyzed. The alteration in the cornea curvature upon stretching resulting from the local sclera coagulation and the corresponding decrease in its volume is calculated. The model makes it possible to approximately estimate the laser irradiation modes that provide the desired alterations in eye refraction. 相似文献
222.
Charles J. Colbourn Sosina S. Martirosyan Gary L. Mullen Dennis Shasha George B. Sherwood Joseph L. Yucas 《组合设计杂志》2006,14(2):124-138
A covering array CA(N;t,k, v is an N × k array such that every N × t subarray contains all t‐tuples from v symbols at least once, where t is the strength of the array. Covering arrays are used to generate software test suites to cover all t‐sets of component interactions. The particular case when t = 2 (pairwise coverage) has been extensively studied, both to develop combinatorial constructions and to provide effective algorithmic search techniques. In this paper, a simple “cut‐and‐paste” construction is extended to covering arrays in which different columns (factors) admit different numbers of symbols (values); in the process an improved recursive construction for covering arrays with t = 2 is derived. © 2005 Wiley Periodicals, Inc. J Combin Designs 14: 124–138, 2006 相似文献
223.
Daniel B. Szyld 《Numerical Algorithms》2006,42(3-4):309-323
Given an oblique projector P on a Hilbert space, i.e., an operator satisfying P
2=P, which is neither null nor the identity, it holds that ||P|| = ||I –P||. This useful equality, while not widely-known, has been proven repeatedly in the literature. Many published proofs are reviewed, and simpler ones are presented. 相似文献
224.
S. Meenakshi B.K. Godwal I. Orgzall S. Tkachev 《Journal of Physics and Chemistry of Solids》2006,67(8):1660-1667
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes. 相似文献
225.
In the field of industrial vision, the 3D inspection of highly reflective metallic objects is still a delicate task. The specular
reflections prevent the use of a 3D laser scanner, whereas the phase shifting-based 3D systems are more adapted to inspect
surfaces with low curvature. This paper deals with a new automated 3D inspection system based on polarization analysis. Studying
the state of polarization of the reflected light is very useful for obtaining information on the normals of the surface. An
extension of the shape from polarization method from dielectric to metallic surfaces is demonstrated. Then, an improved relaxation
algorithm is provided in order to reconstruct the shape from the normal field given by the polarization analysis. Finally,
applications to shape defect detection are discussed and the efficiency of the system in discriminating defects on highly
reflective metallic objects made by stamping and polishing is presented.
The text was submitted by the authors in English. 相似文献
226.
O. I. Berngardt 《Radiophysics and Quantum Electronics》2006,49(6):415-431
We propose a model of coherent-echo signals during the monostatic sounding of the ionosphere. The model is based on the previously
obtained radar equation for separate samples of the scattered signal. The dielectric-permittivity perturbation described by
a discrete set of spatial harmonics modulated in space and time is used as the scattering irregularities. The model was tested
using Irkutsk incoherent-scatter radar data obtained during the coherent-echo observations in July 15 and 16, 2000. The test
shows that the model is suitable for describing the observed characteristics of separate sample spectra of the coherent-echo
signals.
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 6, pp. 459–477, June 2006. 相似文献
227.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献
228.
We have employed a full-relativistic version of an all-electron full-potential linearized-augmented plane-wave method in the local density approximation to investigate the electronic structure of nanolaminate Zr2AlX (X=C and N). The Zr 4d electrons are treated as valence electrons. We have investigated the lattice parameters, bulk moduli, band structures, total and partial densities of states and charge densities. It is demonstrated that the strength and electrical transport properties in these materials are principally governed by the metallic planes. 相似文献
229.
Th. Seyller K.V. Emtsev F. Speck A. Tadich J.D. Riley O. Rader A.M. Shikin 《Surface science》2006,600(18):3906-3911
Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate. 相似文献
230.