“强光一号”等离子体断路开关及负载的数值计算

 等离子体断路开关（POS）是“强光一号”加速器产生短脉冲γ射线的关键器件之一。应用POS融蚀模型分析了“强光一号”加速器POS与二极管系统的基本工作过程，通过该模型计算获得了POS与二极管系统的总电流以及电子束电流，计算结果与实验结果吻合较好。计算结果表明，“强光一号”POS在工作时并未达到完全磁绝缘状态，其阻抗最终为21.5 Ω，约有60％总电流在二极管负载导通时流过POS，且融蚀模型对POS阻抗增长预测偏高，但由于电流变化较大，二极管负载电压仍能达到4.5 MV左右。     

MOSFET调制器的实验研究

 介绍了MOSFET调制器的基本原理,并对其并联分流和感应叠加两种开关结构进行了实验研究。基于可编辑逻辑器件设计了其触发电路,驱动电路采用高速MOSFET对管组成的推挽输出形式,加快了MOSFET的开关速度。利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真,结果表明,加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压。实验中,电流波形用Pearson线圈测量,用3个MOSFET并联作开关,当电容充电电压为450 V,负载为30 Ω时,脉冲电流13 A,前沿20 ns,平顶约80 ns;用3个单元调制器感应叠加,当电容充电电压为450 A,负载为30 Ω时,脉冲电流强度为40 A,前沿25 ns,平顶约70 ns。     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

阿尔芬波加热研究的进展

本文概述了阿尔芬波加热的理论和实验情况。讨论了阿尔芬波加热的基本物理问题,并介绍了某些重要的实验结果。对在大托卡马克上采用阿尔芬波加热的可能性进行了全面论述。     

Ground-state and dynamical properties of a spin-S Heisenberg star

We generalize the Heisenberg star consisting of a spin-1/2 central spin and a homogeneously coupled spin bath modeled by the XXX ring [Richter J and Voigt A 1994 J. Phys. A: Math. Gen. 27 1139-1149] to the case of arbitrary central-spin size S < N/2, where N is the number of bath spins. We describe how to block-diagonalize the model based on the Bethe ansatz solution of the XXX ring, with the dimension of each block Hamiltonian ≤ 2S + 1. We obtain all the eigenenergies and explicit expressions of the sub-ground states in each l-subspace with l being the total angular momentum of the bath. Both the eigenenergies and the sub-ground states have distinct structures depending whether S ≤ l or l < S. The absolute ground-state energy and the corresponding l as functions of the intrabath coupling are numerically calculated for N = 16 and S = 1, 2, ⋯ ,7 and their behaviors are quantitatively explained in the weak and strong intrabath coupling limits. We then study the dynamics of the antiferromagnetic order within an XXX bath prepared in the Néel state. Effects of the initial state of the central spin, the value of S, and the system-bath coupling strength on the staggered magnetization dynamics are investigated. By including a Zeeman term for the central spin and the anisotropy in the intrabath coupling, we also study the polarization dynamics of the central spin for a bath prepared in the spin coherent state. Under the resonant condition and at the isotropic point of the bath, the polarization dynamics for S > 1/2 exhibit collapse-revival behaviors with fine structures. However, the collapse-revival phenomena are found to be fragile with respect to the anisotropy of the intrabath coupling.     

Nonideal double-slope effect in organic field-effect transistors

With the development of device engineering and molecular design,organic field effect transistors(OFETs)with high mobility over 10 cm2 V-1-s-1 have been reported.However,the nonideal doubleslope effect has been frequently observed in some of these OFETs,which makes it difficult to extract the intrinsic mobility OFETs accurately,impeding the further application of them.In this review,the origin of the nonideal double-slope effect has been discussed thoroughly,with affecting factors such as contact resistance,charge trapping,disorder effects and coulombic interactions considered.According to these discussions and the understanding of the mechanism behind double-slope effect,several strategies have been proposed to realize ideal OFETs,such as doping,molecular engineering,charge trapping reduction,and contact engineering.After that,some novel devices based on the nonideal double-slope behaviors have been also introduced.     

液态Sn-Cu钎料的黏滞性与润湿行为研究

金属熔体的黏度和表面张力都是与液态结构相关的敏感物理性质, 且存在一定的相互关系. 对于微电子封装材料而言, 黏度和表面张力均是影响其工艺性能的重要参量. 本文利用回转振动式高温熔体黏度仪测量了Sn-xCu (x = 0.7, 1.5, 2)钎料熔体在不同温度下的黏度值, 发现在一定温度范围内钎料熔体的黏度值存在突变, 可划分为低温区和高温区. 在各温区内, 黏温关系很好地符合Arrhenius方程, 在此基础上讨论了液态钎料的结构特征和演变规律. 同时, 利用黏度值计算了液态Sn-xCu钎料在相应温度下的表面张力, 并通过Sn-xCu钎料在Cu基板上的润湿铺展实验对计算结果进行验证. 结果显示, 润湿角和扩展率的测试结果与表面张力的计算结果具有很好的一致性, 表明通过熔体黏度值来计算锡基二元无铅钎料合金表面张力并评估其润湿性能的方法是可行的. 关键词： Sn-Cu钎料 黏度 表面张力 润湿性     

磁刺激穴位复杂脑功能网络构建与分析

本文采用互信息方法对磁刺激内关穴过程中的脑电信 号进行了两两通道间非线性时域关联特性分析, 构建了不同频率刺激前、刺激中、刺激后的脑功能网络, 并基于复杂网络理论对脑功能网络的特征进行了深入研究. 结果表明, 磁刺激频率为3 Hz 时, 大脑功能网络的平均度、平均聚类系数和全局效率与刺激前相比均有显著升高, 平均路径长度显著降低, 并且相应脑功能网络的"小世界"属性有所增强, 信息在大脑各区域间的传递更加高效. 本研究首次开展了磁刺激穴位复杂脑功能网络的构建与分析, 为探索磁刺激穴位对大脑神经调节的作用和机理提供新思路和新方法. 关键词： 复杂网络 磁刺激 脑功能网络 互信息     

国产六面顶压机多晶种法合成宝石级金刚石单晶

对国产六面顶压机平台下使用多晶种法合成宝石级金刚石单晶进行了系统的研究. 通过合理调整温度梯度法的合成腔体组装, 采用多晶种法, 探索多晶种法金刚石合成的压力和温度区间, 在单个合成腔体内放置3–5颗金刚石晶种, 成功合成出多颗(3–5)优质Ib型宝石级金刚石单晶. 多颗晶种的引入, 单次实验合成的多个金刚石晶体晶形及品质一致; 同时, 晶体的整体生长速度也有明显的增大. 多晶种法金刚石单晶合成的研究, 可以有效地利用腔体空间、提高单次金刚石单晶合成的效率, 解决压机大型化下高温高压资源利用率低的问题; 同时, 为宝石级金刚石单晶商业化生产提供重要的依据. 关键词： 金刚石 国产六面顶 多晶种 温度梯度法     

Refined holographic entanglement entropy for the AdS solitons and AdS black holes

We consider the refinement of the holographic entanglement entropy for the holographic dual theories to the AdS solitons and AdS black holes, including the corrected ones by the Gauss–Bonnet term. The refinement is obtained by extracting the UV-independent piece of the holographic entanglement entropy, the so-called renormalized entanglement entropy which is independent of the choices of UV cutoff. Our main results are: (i) the renormalized entanglement entropies of the _AdSd+1${\mathrm{AdS}}_{d+1}$ soliton for d=4,5$d=4,5$ are neither monotonically decreasing along the RG flow nor positive-definite, especially around the deconfinement/confinement phase transition; (ii) there is no topological entanglement entropy for AdS₅ soliton even with Gauss–Bonnet correction; (iii) for the AdS black holes, the renormalized entanglement entropy obeys an expected volume law at IR regime, and the transition between UV and IR regimes is a smooth crossover even with Gauss–Bonnet correction; (iv) based on AdS/MERA conjecture, we postulate that the IR fixed-point state for the non-extremal AdS soliton is a trivial product state.