Instabilities in free-surface electroosmotic flows

Instability of a thin electrolyte film undergoing a direct current electroosmotic flow has been investigated. The film with a compliant electrolyte–air interface is flowing over a rigid charged substrate. Unlike previous studies, inclusion of the Maxwell stresses in the formulation shows the presence of a new finite wavenumber shear-flow mode of instability, alongside the more frequently observed long-wave interfacial mode. The shear mode is found to be the dominant mode of instability when the electrolyte–solid and electrolyte–air interfaces are of opposite charge or of same charge but have very large zeta-potential at the electrolyte–air interface. The conditions for mode-switch (interfacial to shear) and the direction of the travelling waves are discussed through stability diagrams. Interestingly, the analysis shows that when the interfaces are of nearly same zeta potential, the ‘free’ electrolyte–air interface behaves more like a ‘stationary’ wall because of the ion transport in the reverse direction of the flow.     

Finite Larmor radius effect on thermosolutal instability of a plasma in porous medium

The thermosolutal instability of a plasma in porous medium is considered in the presence of finite Larmor radius effect. The finite Larmor radius, stable solute gradient and magnetic field introduce oscillatory modes in the systems which were nonexistent in their absence. For stationary convection, the finite Larmor radius and stable solute gradient have stabilizing effects on the thermosolutal instability in porous medium. In presence of finite Larmor radius effect, the medium permeability has a destabilizing (or stabilizing) effect and the magnetic field has a stabilizing (or destabilizing) effect under certain condition whereas in the absence of finite Larmor radius effect, the medium permeability and the magnetic field have destabilizing and stabilizing effects, respectively, on thermosolutal instability of a plasma in porous medium. The sufficient conditions for nonexistence of overstability are obtained.The financial assistance to Mr. Sunil in the form of Senior Research Fellowship of the Council of Scientific and Industrial Research (CSIR), New Delhi is gratefully acknowledged.     

Search for a precursor crystal-to-crystal phase transition to amorphization in α-GeO2 and α-AlPO4 under pressure

Recent X-ray diffraction studies on α-quartz (SiO₂) by Kingmaet al [1], have shown the occurrence of a reversible, crystalline-to-crystalline, phase transition just prior to amorphization at ≈ 21 GPa. This precursor transition has also been confirmed by our recent molecular dynamics simulation study [2]. In order to investigate the possibility of a similar behaviour in other isostructural compounds, which also undergo pressure induced amorphization, α-GeO₂ and α-AlPO₄ (berlinite form) were studied using energy dispersive X-ray diffraction. In either of these materials, no such phase transition is detected prior to amorphization. The onset of amorphization and its reversal is found to be time dependent in GeO₂.     

Equiconvergence of some complex interpolatory polynomials

Summary Walsh showed the close relation between the Lagrange interpolant in then ^th roots of unity and the corresponding Taylor expansion for functions belonging to a certain class of analytic functions. Recent extensions of this phenomena to Hermite interpolation and other linear processes of interpolation have been surveyed in [3, 5]. Following a recent idea of L. Yuanren [7], we show how new relations between other linear operators can be derived which exhibit Walsh equiconvergence.Dedicated to R. S. Varga on the occasion of his sixtieth birthdayThese authors were supported by NSERC A3094     

Contact hypersurfaces of Kaehler manifolds

Contact hypersurfaces of a Kaehler manifold have been characterized and classified, assuming the second fundamental form to be Codazzi (in particular, parallel). We have also discussed the special cases when the ambient space is a (i) Calabi-Yau manifold and (ii) a complex space-form.     

Preparation and electrical characterization of (PVC + KBrO3) polymer electrolytes for solid state battery applications

This paper presents results of studies on dc electrical conductivity and transference number measurements on potassium bromate (KBrO₃) complexed polyvinyl chloride (PVC) films prepared by solution cast technique. Temperature dependence of dc electrical conductivity and transference number data indicated the dominance of ion type charge transport in these specimens. The magnitude of conductivity increased with increase in concentration of the salt and temperature. Using this (PVC + KBrO₃) electrolyte, solid-state electrochemical cells were fabricated, and their discharge profiles were studied under a constant load of 100 kΩ. Several cell profiles such as open circuit voltage, short circuit current, power density, and energy density associated with these cells were evaluated and were reported. The features of complexation of the electrolytes were studied by X-ray diffraction and Fourier transform infrared spectroscopy. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

Current instabilities in dynamic random access memory storage capacitor formed with electron beam deposited Y2O3 dielectric

Metal-oxide-semiconductor (MOS) storage capacitors based on electron beam deposited Y₂O₃ extrinsic dielectric on Si show changes in capacitance density depending on the amorphous and crystalline phases. Bias stress cycle-dependent changes in capacitance density occur due to the non-equilibrium nature of defect states at the Y₂O₃/Si interface after O₂ annealing as a result of the emergence of a 4–8 nm thick SiO₂ film at the interface. Leakage currents show instability under repeated dc bias stress, the nature and extent of which depend upon the structure of the Y₂O₃ gate dielectric and the polarity of dc bias. With amorphous Y₂O₃, leakage currents drift to lower values under gate injection due to electron trapping, and to higher values under Si-injection due to the generation of holes. Though leakage current drift is minimal for crystalline Y₂O₃, its magnitude increases as the energy of injected electrons from mid-gap states is low and the local field due to asperity is high. The emergence of interfacial SiO₂ reduces the magnitude of Si-injection leakage current substantially, but causes transient changes resulting in switching to higher values at a threshold dc bias. Thermal detrapping of holes and reverse bias stress studies confirm that the instability of current is caused by an increase in the cathodic field from hole trapping at interface states. Leakage current instability limits the application of extrinsic high dielectric constant dielectrics in a high density DRAM storage capacitor, unless a new interface layer scheme other than SiO₂ and a method to form a defect-free dielectric layer can be implemented. Received: 29 October 2001 / Accepted: 22 April 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +1-413/545-4611, E-mail: rastogi@ecs.umass.edu     

Magnetic and martensitic transitions in Ni-Fe-Ga alloy

The ferromagnetic shape memory alloy with nominal composition Ni₅₄Fe₁₉Ga₂₇ is investigated by Ac susceptibility and resistivity measurements. The alloy shows long-range ferromagnetic order below 290 K. The anomaly due to the martensitic transition is observed in the susceptibility and resistivity data in the temperature range around 220 K, which is associated with clear thermal hysteresis. Minor hysteresis loop technique was used to investigate the phase coexistence across the martensitic transition, and our analysis indicate that both martensite and austenite phases mutually coexist in the region of hysteresis.     

High spin states in120Xe

High spin states in ¹²⁰Xe, populated via¹⁰⁷Ag(¹⁶O, p2n) and¹⁰⁸Pd(¹⁶O, 4n)reactions have been studied using γ-ray spectroscopic techniques. 21 new transitions have been added to extend the level scheme. Two S-bands are extended upto 26⁺ and 22⁺;these bands are found to cross the g. s band at hΩ=0. 39 and 0. 47 MeV. The band structures have been discussed within the framework of CSM.