A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.     

355 nm激光作用下苯甲醚的多光子电离质谱研究

在355 nm激光作用下,利用多光子电离技术结合飞行时间质谱(TOF-MS)对苯甲醚分子进行了研究。实验结果表明苯甲醚分子的多光子电离机制属于母体分子电离-解离模型。通过对主要碎片离子的可能形成过程的讨论,得出该波长下母体分子离子解离的主要有两种通道,但是随激光能量的增强,甲基移除通道逐步占据优势成为主要通道。应用高斯软件采用HF/6-31G(d) 方法对苯甲醚分子和苯甲醚阳离子基态的几何构型进行优化得到其稳定构型,并计算了苯甲醚分子离子及其初级解离产物的能量。比较两条通道的碎片离子能量的变化,理论验证了实验中苯甲醚分子主要解离通道的合理性。     

A new probe of neutron skin thickness

The correlation between neutron-to-proton yield ratio (R_np) and neutron skin thickness (δ_np) in neutron-rich projectile induced reactions is investigated within the framework of the Isospin-Dependent Quantum Molecular Dynamics (IQMD) model. The density distribution of the Droplet model is embedded in the initialization of the neutron and proton densities in the present IQMD model. By adjusting the diffuseness parameter of neutron density in the Droplet model for the projectile, the relationship between the neutron skin thickness and the corresponding R_np is obtained. The results show strong linear correlation between R_np and δ_np for neutron-rich Ca and Ni isotopes. It is suggested that R_np may be used as an experimental observable to extract δ_np for neutron-rich nuclei, which is very interesting in the study of the nuclear structure of exotic nuclei, the equation of state (EOS) of asymmetric nuclear matter and neutron-rich matter in astrophysics, etc.     

一种双正则项全变差高光谱图像去噪算法

受传感器特性影响,高光谱图像中的噪声在各个维度都有体现。噪声的存在降低了高光谱图像中信息的有效性,在进行地物分类前必须采用适当的算法对噪声予以去除。文章针对高光谱图像的噪声特性,提出了一种基于全变差的高光谱图像去噪算法。该算法将经典二维图像全变差去噪模型推广至三维形式,提出了采用双正则项及相应的调整参数的目标函数,在三维空间中完成新目标函数的离散化,并采用基于优化-最小化算法的迭代方法对目标函数进行优化与求解。对星载Hyperion成像光谱仪数据的实验表明,适当的设置调整参数,该方法可很好地提高高光谱图像的各波段信噪比、平滑光谱曲线并保留细节特征,其去噪效果优于经典的MNF去噪算法及Savitzky-Golay滤波方法。     

TG-FTIR技术对水氯镁石结晶热解过程的研究

水氯镁石脱水是镁资源利用的关键.其中一种重要的方法是向水氯镁石中添加助剂形成复盐及络合物脱水.通过缓慢冷却水氯镁石及盐酸苯胺的过饱和水溶液制备了水氯镁石-盐酸苯胺结晶物.通过TGDTA-FTIR联用技术分析了盐酸苯胺、水氯镁石以及盐酸苯胺-水氯镁石结晶物的热解过程,定性检测每步分解的逸出气体以推测反应过程.结果显示:盐酸苯胺在400℃以前仅发生物理变化;水氯镁石的热解分阶段进行,205℃以前发生脱去四个结晶水,205℃以后在脱水反应的同时发生水解反应生成HCl;盐酸苯胺-水氯镁石结晶物分阶段脱水、脱盐酸苯胺,整个过程没有水解现象发生,能够得到高纯度无水氯化镁.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

Structural polarization properties of vector Gaussian beam in the far field

Based on the vector angular spectrum representation of optical beam and the method of stationary phase, the analytical TE and TM terms of vector Gaussian beam have been presented in the far field. By using the local polarization matrix, the polarization properties of the TE and TM terms in the far field are investigated, and it is found that the degree of their polarization is only determined by the spatial location. When the source is completely polarized, the TE and TM terms are both completely polarized in the far field. When the source is completely unpolarized, the TE and TM terms in the far field are partially polarized. The whole beam is also partially polarized except on the propagating axis. Moreover, the degrees of polarization of TE and TM terms are both larger than that of the whole beam.[第一段]     

近自然彩色图像融合算法及其实时处理系统的发展

在军事和生产领域,特别是在极其恶劣的可视条件下,图像融合技术越来越强调融合效果显示的"近自然"感觉,以及人类视觉感知的要求。从彩色图像融合算法的发展概况出发,着重介绍了两种具有代表性的基于视觉特性的近自然彩色图像融合方法,并特别阐述了课题组近期开展的相关算法研究成果。总结了国内外实时彩色图像融合系统的发展现状,概括了课题组已具备的硬件实验基础,综合分析了实时彩色图像融合技术的若干关键技术,如多源图像特征分析、实时图像配准、融合图像后处理等。针对实时图像融合技术的应用状况,提出图像融合系统未来的发展趋势。     

脉冲偏压电弧离子镀TiO2薄膜的力学与光学性能

用脉冲偏压电弧离子镀技术在玻璃基片上制备均匀透明的TiO₂薄膜.利用X射线衍射仪、原子力显微镜、扫描电子显微镜、紫外-可见透射光谱仪和纳米压痕仪等手段,对不同脉冲负偏压下合成薄膜的相结构、微观结构、表面形貌、力学和光学性能进行表征.结果表明，沉积态薄膜为非晶态.脉冲负偏压对薄膜性能有明显的影响.随偏压的增加，薄膜厚度、硬度和弹性模量均先增大后减小，前者峰值出现在100—200 V负偏压范围，后两者则在250—350V范围.300 V负偏压时薄膜硬度最高，薄膜达到原子级表面光滑度，均方 关键词： 2薄膜')" href="#">TiO₂薄膜 脉冲偏压电弧离子镀 硬度 折射率