Observation and analysis ofE mesons in\bar p p annihilation at rest in H2 gas

Antiproton-proton annihilation at rest in a gaseous H₂ target at NTP into the final state π⁺ π^? K ^± π^? (K ⁰) with an undetectedK ⁰ or \(\bar K^0 \) has been investigated. We observe theE(1420) resonance in the invariant mass spectrum (K ⁰)_miss K ^± π^? with massM _E =1413±8 MeV/c² and widthГ ^E =62 ± 16MeV/c² and find evidence for the production of thef ₁(1285). The absolute branching ratio of \(\bar p\) p → π⁺ π^? E ⁰,E ⁰ →K ₀ ^L K ^± π ^? at (61±6)%P wave annihilation is (3.0±0.9)·10^?4 of all annihilations. The observed suppression of theE production fromP wave with respect to theS wave together with some simple selection rules suggest that the quantum numbers of theE(1420) areJ ^pc=0^?+ and not I⁺⁺.     

Unique pitch evolution in the smectic-C+alpha phase

Employing resonant x-ray diffraction, we observed unique pitch evolutions in the smectic-C*(alpha) phase in mixtures of two antiferroelectric liquid crystals. Our results show that the pitch in this phase continuously evolves across 4 layers, contradicting a theoretical model that predicts that the smectic-C*(FI2) phase intervenes in the smectic-C*(alpha) phase. The phase sequences we found can be explained by another model that includes one type of long-range interaction among smectic layers.     

Hopf bifurcation control via a dynamic state-feedback control

To relocate two Hopf bifurcation points, simultaneously, to any desired locations in n-dimensional nonlinear systems, a novel dynamic state-feedback control law is proposed. Analytical schemes to determine the control gains according to the conditions for the emergence of Hopf bifurcation are derived. To verify the effectiveness of the proposed control law, numerical examples are provided.     

Joint remote preparation of an arbitrary three-qubit state via EPR-type pairs

In this work, we propose a scheme to realize a joint remote preparation of an arbitrary three-qubit state using six EPR-type pairs as the shared quantum resource. By determining the right measurement bases for the preparers and right ancilla-assisted unitary transformation/recovery operations for the receiver, our scheme applies to the most general case when all the coefficients of the state to be prepared and the EPR-type pairs are complex. The total success probability is found to be dependent only on the “smaller” coefficients of the EPR-type pairs shared between the receiver and one of the preparers.     

Surface and interfacial properties of PVDF/acrylic copolymer blends before and after UV exposure

Morphological and chemical properties of both the surface and interface of poly(vinylidene fluoride)/poly(methyl methacrylate)-co-poly(ethyl acrylate) (PVDF/PMMA-co-PEA) blend films have been investigated before and after the samples were exposed to ultraviolet (UV) irradiation using a xenon arc lamp at 50 °C and 9% relative humidity (RH) for 7 months. Surface and interfacial morphologies were studied by atomic force microscopy (AFM). Chemical composition information was obtained by confocal Raman microscopy, attenuated total reflection-FTIR spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. Results show an enrichment of the PVDF material at the air surface, while the acrylic copolymer enriches the interface. Blends having greater than 50% mass fraction of PVDF show little change in the surface morphology after UV exposure for 7 months. However, for a lower PVDF content, blends exhibit significant degradation of PMMA-co-PEA copolymer and a much rougher surface after UV exposure. Microstructural changes in the PVDF spherulites are also observed after UV degradation. It is found that the surface and interfacial morphologies are correlated with the chemical properties.     

Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhanced suppression of superconductivity in amorphous films with nano-scale patterning

We have measured the thickness dependence of the superconducting critical temperature, T_c(d_Bi)$T_c(d_{\text{Bi}})$, in amorphous Bi/Sb films patterned with a regular array of holes as well as nanoscale thickness variations. We find that the mean field T_c$T_c$ is suppressed relative to simultaneously produced unstructured films of the same thickness. Surprisingly, however, the functional form for T_c(d_Bi)$T_c(d_{\text{Bi}})$, remains unaffected. The role of the thickness variations in suppressing T_c$T_c$ is compared to the role of the holes, through parameterization of the surface, as measured through AFM/SEM and a proximity effect calculation. These results suggest that these two nanoscale modifications suppress T_c$T_c$ about equally and are consistent with T_c$T_c$ being determined on a microscopic length scale.     

Structural and compositional heterogeneities in liquid aluminosilicate: insight from a grain structure model

Network structure as well as structural and compositional heterogeneities in aluminosilicate (Al₂O₃-2SiO₂) under compression is investigated by analysis and visualization of simulation data. Structural and compositional heterogeneities are clarified through analysis of topology structure and size distribution of TO _x -clusters (T = Si, Al; x = 3, 4, 5, 6) as well as OT _y -clusters (y = 2, 3, 4). The TO _x -cluster can be considered as TO _x -grains. It appears that the structure of aluminosilicate is the mixture of TO _x -grains with a different short-range order structure and this is the origin of structural heterogeneity. Regarding their composition, the OSi _y - and OAl _y -clusters can be considered as silica- and alumina-grains respectively, and the structure of aluminosilicate can thus be considered to be formed from silica- and alumina-grains. This results in compositional heterogeneity. Moreover, the degree of polymerization and polyamorphism as well as dynamic heterogeneity is also discussed in detail.     

Advances in theoretical and experimental XAFS studies of thermodynamic properties,anharmonic effects and structural determination of fcc crystals

Thermodynamic properties, anharmonic effects and structural determination of fcc crystals have been studied based on the theoretical and experimental Debye–Waller factors presented in terms of cumulant expansion up to the third order, thermal expansion coefficient, X-ray absorption fine structure (XAFS) spectra and their Fourier transform magnitudes. The advances in these studies are performed by the further development of the anharmonic correlated Einstein model primary only for approximating three first XAFS cumulants into the method using that all the considered theoretical and experimental XAFS parameters have been provided based on only the calculated and measured second cumulants. The obtained cumulants describe the anharmonic effects in XAFS contributing to the accurate structural determination. Numerical results for Cu are found to be in good agreement with the experimental values extracted by using the present advanced method and with those obtained by the other measurements.