220 μJ monolithic single-frequency Q-switched fiber laser at 2 μm by using highly Tm-doped germanate fibers

We report a unique all fiber-based single-frequency Q-switched laser in a monolithic master oscillator power amplifier configuration at ~1920 nm by using highly Tm-doped germanate fibers for the first time. The actively Q-switched fiber laser seed was achieved by using a piezo to press the fiber in the fiber Bragg grating cavity and modulate the fiber birefringence, enabling Q-switching with pulse width and repetition rate tunability. A single-mode polarization maintaining large core 25 μm highly Tm-doped germanate fiber was used in the power amplifier stage. For 80 ns pulses with 20 kHz repetition rate, we achieved 220 μJ pulse energy, which corresponds to a peak power of 2.75 kW with transform-limited linewidth.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Event excess in the MiniBooNE search for ¯νμ→¯νe oscillations

The MiniBooNE experiment at Fermilab reports results from a search for ˉν_{μ}→ˉν_{e} oscillations, using a data sample corresponding to 5.66×102? protons on target. An excess of 20.9±14.0 events is observed in the energy range 475相似文献   

Photon regeneration experiment for axion search using x-rays

In this Letter we describe our novel photon regeneration experiment for the axionlike particle search using an x-ray beam with a photon energy of 50.2 and 90.7 keV, two superconducting magnets of 3 T, and a Ge detector with a high quantum efficiency. A counting rate of regenerated photons compatible with zero has been measured. The corresponding limits on the pseudoscalar axionlike particle-two-photon coupling constant is obtained as a function of the particle mass. Our setup widens the energy window of purely terrestrial experiments devoted to the axionlike particle search by coupling to two photons. It also opens a new domain of experimental investigation of photon propagation in magnetic fields.     

Temperature‐dependent Raman scattering study of multiferroic MnWO4

We have measured polarized Raman spectra of MnWO₄ single crystals at low temperatures, and studied the temperature dependence of the various phonon modes. From our Raman studies of the MnWO₄, a new transition temperature, ∼180 K, was found. We have completely assigned the symmetries of the 18 observed Raman modes of the MnWO₄, as expected from a group theoretical analysis. These Raman modes have been classified into three groups according to weak, intermediate and strong temperature dependence of the modes in each group. Six internal modes have been identified by their weak temperature dependence of the Raman wavenumbers. The temperature dependence of the wavenumbers of the B_g modes in Mg O bonds, modes of intermediate temperature dependence group, shows an anomalous behavior under 50 K. The phonon modes of strong temperature dependence show an anomalous change at ∼180 K in the linewidths. This is believed to be a new transition temperature which involves the changes in the inter‐WO₆ octahedra structure. Copyright © 2009 John Wiley & Sons, Ltd.     

Enhanced suppression of superconductivity in amorphous films with nano-scale patterning

We have measured the thickness dependence of the superconducting critical temperature, T_c(d_Bi)$T_c(d_{\text{Bi}})$, in amorphous Bi/Sb films patterned with a regular array of holes as well as nanoscale thickness variations. We find that the mean field T_c$T_c$ is suppressed relative to simultaneously produced unstructured films of the same thickness. Surprisingly, however, the functional form for T_c(d_Bi)$T_c(d_{\text{Bi}})$, remains unaffected. The role of the thickness variations in suppressing T_c$T_c$ is compared to the role of the holes, through parameterization of the surface, as measured through AFM/SEM and a proximity effect calculation. These results suggest that these two nanoscale modifications suppress T_c$T_c$ about equally and are consistent with T_c$T_c$ being determined on a microscopic length scale.     

Preparation and characterization of nanosized (Y,Bi)VO4:Eu and Y(V,P)O4:Eu red phosphors

Nanosized luminescent (Y,Bi)VO₄:Eu³⁺ and Y(V,P)O₄:Eu³⁺ were synthesized at low temperatures either by a coprecipitation method or by a hydrothermal method from aqueous solutions. The effect of Bi³⁺ ion or P⁵⁺ ion content in the lattice, annealing temperature effects on the crystal structure and the particle size, and the luminescence property of (Y,Bi)VO₄:Eu³⁺ and Y(V,P)O₄:Eu³⁺ nanoparticles were examined with a field-enhanced scanning electron microscopy, XRD, and a spectrofluorometer. The pristine YVO₄:Eu³⁺, (Y,Bi)VO₄:Eu³⁺, or Y(V,P)O₄:Eu³⁺ nanoparticles are 35-50 nm in size. The luminescence spectrum of the Eu³⁺ ion was used to probe its position in the crystal lattice. The dopant ions enter the same lattice sites in the nanocrystalline as in the corresponding bulk material, resulting similar spectral features between them. Photoluminescence intensity is weak for the pristine nanoparticles. Annealing the nanoparticles at temperatures up to 1000 °C results in the increased luminescence intensity (>80% of micrometer-sized phosphors) with the minimal particle growth and the improved particle crystallinity.     

Observation and analysis ofE mesons in\bar p p annihilation at rest in H2 gas

Antiproton-proton annihilation at rest in a gaseous H₂ target at NTP into the final state π⁺ π^? K ^± π^? (K ⁰) with an undetectedK ⁰ or \(\bar K^0 \) has been investigated. We observe theE(1420) resonance in the invariant mass spectrum (K ⁰)_miss K ^± π^? with massM _E =1413±8 MeV/c² and widthГ ^E =62 ± 16MeV/c² and find evidence for the production of thef ₁(1285). The absolute branching ratio of \(\bar p\) p → π⁺ π^? E ⁰,E ⁰ →K ₀ ^L K ^± π ^? at (61±6)%P wave annihilation is (3.0±0.9)·10^?4 of all annihilations. The observed suppression of theE production fromP wave with respect to theS wave together with some simple selection rules suggest that the quantum numbers of theE(1420) areJ ^pc=0^?+ and not I⁺⁺.     

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

LaAlO₃ (LAO) is explored in this work to replace SiO₂ as the gate dielectric material in metal–oxide–semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)₃ and Al(acac)₃ sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of 37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p