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31.
32.
Single photonic crystal defects based on an air-bridge structure were fabricated. We obtained sharp defect modes with quality factors higher than 600 and observed their response to ultrashort optical pulses by utilizing two-photon absorption.  相似文献   
33.
34.
We theoretically demonstrate optical pulsation based on optical near-field interactions between quantum nanostructures. It is composed of two quantum dot systems, each of which consists of a combination of smaller and larger quantum dots, so that optical excitation transfer occurs. With an architecture in which the two systems take the role of a timing delay and frequency up-conversion, we observe pulsation in populations pumped by continuous-wave light irradiation. The pulsation is induced with suitable setting of parameters associated with the optical near-field interactions. This will provide critical insights toward the design and implementation of experimental nanophotonic pulse generating devices.  相似文献   
35.
It is confirmed, in terms of the Woods-Saxon-Strutinsky method, that the spin-orbit potential plays a decisive role in the predominance of prolate deformation, which has been a long standing problem in nuclear physics. It is originated from the combined effects of the spin-orbit coupling and the diffused surface of the potential, in agreement with the previous work based on a more schematic Nilsson-Strutinsky method. The degree of prolate-shape dominance exhibits an oscillatory behavior with respect to the strength of spin-orbit potential and, the prolate-shape dominance is realized at the proper strength of the spin-orbit potential together with the standard surface diffuseness; this oscillatory behavior disappears in case of small diffuseness corresponding to ellipsoidal cavity. The calculated energy differences between oblate and prolate minima in this Letter are consistent with those of our extensive self-consistent calculations of the Hartree-Fock + BCS method with the Skyrme interaction.  相似文献   
36.
We have used a non-equilibrium surface Green's function matching formalism combined with a tight-binding Hamiltonian to consider the effect of different arrangements of pentagon rings on localization of density of states at the tip regions of semi-infinite capped carbon nanotubes. The transfer matrixes are obtained by an iterative procedure. The results demonstrate that the positions of the peaks near Fermi energy are remarkably affected by the relative locations of pentagons. It is observed that in thin nanotubes, carbon atoms belonging two neighboring pentagon rings have significant contribution in the localized states near fermi energy. From our calculations, it turns out that the metallic or semiconducting behavior of capped nanotubes in the tip regions depends on the metallic or semiconducting nature of their nanotube stems.  相似文献   
37.
We utilize nitroanisole, that absorbs infrared (IR) radiation as heat, as an optical modulation device based on a thermal process. The nitroanisole exhibits a thermal lens effect, i.e. a temperature dependent refractive index. Hence, the nitroanisole can induce phase modulation to visible light, in direct response to intensity of the incident IR radiation. The proposed method can be used to obtain the phase modulation distribution that corresponds to the IR intensity distribution, i.e. the IR hologram itself, on the nitroanisole by examining the phase map of visible light that is modulated upon passing through the nitroanisole. The IR wavefront can be reconstructed by calculating extracted IR holograms through the Fresnel transform. It is verified that both the amplitude and the phase of the IR wavefront can be reconstructed accurately by proposed method.  相似文献   
38.
Within the methodology [M. Khazaei, A.A. Farajian, Y. Kawazoe, Phys. Rev. Lett. 95 (2005) 177602] based on first-principles electronic structure calculations, the effects of Cs treatment on current emissions and emission patterns of capped carbon nanotubes are considered at low deposition densities when the nanotubes are under an electric field 0.2 V/Å. The results show that the current emission from the cap with one adsorbed Cs is 3.4 times larger than the cap without any Cs. It is 9.6 times larger in the cap with two adsorbed Cs atoms. After Cs deposition the emission patterns become asymmetric (current emission from the carbon atoms located at the topmost pentagon ring close to Cs atoms is larger than the other atomic sites). There are very few localized states on Cs atoms. Hence, although the tunneling probability of electron emission from Cs atoms is significant, there is no current from Cs atoms. In addition, the effect of Cs on work function reduction of nanotubes is explained in terms of Cs deposition densities and the surface dipole moments.  相似文献   
39.
We propose a color vision model that can be used to predict color appearance in mesopic vision as well as photopic and scotopic vision. It is based on a two-stage model which consists of the cone and opponent stages and it assumes rod intrusion at the opponent stage. The model has the following features to describe the color appearance in mesopic vision. First, it includes a gradual and nonlinear shift in spectral luminous efficiency from V (LD) to V (LD) to cope with the spectral sensitivity difference between photopic and scotopic vision and the nonlinearity of rod influence on the luminance channel. Second, the model assumes decrease of the chromatic component with decreasing illuminance to explain the reduction of saturation at low illuminance levels. Third, it assumes that red/green and yellow/blue components change with illuminance levels independently, thus explaining hue shifts with decreasing illuminance. We applied the model for color appearance simulation of natural scenes in a mesopic visual environment.  相似文献   
40.
We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(0 0 1) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs.  相似文献   
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