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161.
A high efficiency launcher of quasi-optical (QO) mode converters for high power gyrotrons have been designed and tested. A helical cut launcher radiates the RF power via its straight cut onto the first phase correcting mirror. The launchers have been optimized for the TE31.8 mode at 170 GHz and TE22.6 mode at 110 GHz by numerically optimizing a launcher surface. The helical cut of the launcher has been optimized by taking the taper angle into account. Further more, the amplitude of the surface perturbation have been optimized for improved focusing in order to reduce the diffraction losses at the helical cut. Low power measurement shows a good agreement with the design. High efficiency characteristics of the design have also been calculated on the assumption of frequency downshift due to the thermal expansion of the cavity and stepwise frequency tuning by changing the operating mode. Besides, the possibility of high efficiency launcher for higher mode is discussed, and these results give the prospect to high efficiency long pulse gyrotrons.  相似文献   
162.
The morphology of a glass surface having a transparent coating processed with focused femtosecond laser pulses is investigated. The transparent coating is formed of poly-methyl methacrylate (PMMA). When the glass was coated with a PMMA film with a thickness of 2.8 μm, bumps were formed over a wide range of axial focus positions. The same laser pulse energy produced cavities when processing bare glass with no coating. The bumps were formed as a result of suppressing material emission from the glass surface by a shielding effect of plasma generated by ablation of the PMMA film and by physical blocking of the PMMA film. A thinner film with a thickness of 0.7 μm produced a reduced shielding effect, forming an exploded bump with a small pit at its center and debris around the periphery. PACS 44.10.+i; 61.80.Ba; 79.20.Ds  相似文献   
163.
There are many advantages in being able to perform positron annihilation lifetime spectroscopy (PALS) using a variable energy positron beam, the most obvious being the easy identification of different defect types at different depths. The difficulty in conducting variable energy (VE) PALS studies lies in the fact that a “start” signal is required to signal the entry of the positron into the target. Two methods have been used to overcome this problem, namely the bunching technique, which employs radio frequency (RF) cavities and choppers, and secondly the use of secondary electrons emitted from the target. The latter technique is in terms of experimental complexity much simpler, but has in the past suffered from poor time resolution (typically ∼500 ps). In this work, we present a series of computer simulations of a design based on the secondary electron emission from thin C-foils in transmission mode which shows that significant improvements in time resolution can be made with resolutions ∼200 ps being in principle possible.  相似文献   
164.
Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 − xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 − xCdxTe epilayers can be converted to p-Hg1 − xCdxTe epilayers by in situ annealing.  相似文献   
165.
U Camci  Z Can  Y Nutku  Y Sucu  D Yazici 《Pramana》2006,67(6):1043-1053
We present the explicit form of the symplectic structure of anti-self-dual Yang-Mills (ASDYM) equations in Yang’s J- and K-gauges in order to establish the bi-Hamiltonian structure of this completely integrable system. Dirac’s theory of constraints is applied to the degenerate Lagrangians that yield the ASDYM equations. The constraints are second class as in the case of all completely integrable systems which stands in sharp contrast to the situation in full Yang-Mills theory. We construct the Dirac brackets and the symplectic 2-forms for both J- and K-gauges. The covariant symplectic structure of ASDYM equations is obtained using the Witten-Zuckerman formalism. We show that the appropriate component of the Witten-Zuckerman closed and conserved 2-form vector density reduces to the symplectic 2-form obtained from Dirac’s theory. Finally, we present the Bäcklund transformation between the J- and K-gauges in order to apply Magri’s theorem to the respective two Hamiltonian structures.  相似文献   
166.
We have investigated the magnetic, electrical transport and electron spin resonance (ESR) properties of polycrystalline Nd0.85Na0.15MnO3 prepared by sol–gel method. A ferromagnetic–paramagnetic (FM–PM) transition is observed around 110 K, which is not accompanied by a metal–insulator transition. The sample displays the complete PM state associated with the ESR spectra fitted by single Lorentzian line shape above 130 K. Below 130 K, ESR spectra become distorted and then linewidth increases rapidly, where short-range magnetic order develops and coexists with PM phase due to the inhomogeneous magnetic state. In addition, the large difference between the activation energies obtained from the resistivity and ESR parameters (peak-to-peak linewidth and line intensity) at the frame of adiabatic small polaron hopping model is pointed out for Nd0.85Na0.15MnO3.  相似文献   
167.
通过测量252Cf自发裂变所产生的瞬发γ射线, 对146Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对146Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.  相似文献   
168.
Consider the problem of three point vortices (also called Helmholtz’ vortices) on a plane, with arbitrarily given vorticities. The interaction between vortices is proportional to 1/r, where r is the distance between two vortices. The problem has 2 equilateral and at most 3 collinear normalized relative equilibria. This 3 is the optimal upper bound. Our main result is that the above standard statements remain unchanged if we consider an interaction proportional to r b, for any b < 0. For 0 < b < 1, the optimal upper bound becomes 5. For positive vorticities and any b < 1, there are exactly 3 collinear normalized relative equilibria. The case b = −2 of this last statement is the well-known theorem due to Euler: in the Newtonian 3-body problem, for any choice of the 3 masses, there are 3 Euler configurations (also known as the 3 Euler points). These small upper bounds strengthen the belief of Kushnirenko and Khovanskii [18]: real varieties defined by simple systems should have a simple topology. We indicate some hard conjectures about the configurations of relative equilibrium and suggest they could be attacked within the quasi-polynomial framework.  相似文献   
169.
The three dimensional problem of steady fluid deposition on an inclined rotating disk is solved by similarity transform. For a given spraying rate there may be one, two or no steady state solution. The inclination causes a downward draining flow and a lateral flow. Perturbation solutions compare well with exact similarity solutions when the fluid film is thin.  相似文献   
170.
Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h  相似文献   
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