Bright Red Organic Electroluminescent Devices Based on a Soluble Rare Earth Complex Eu(TTA)_3 Phen

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腰椎间盘纤维环膨隆症站立位动态脊髓造影的临床意义

目的:在MRI或CT检查的腰腿痛病人中,通过站立位动态脊髓造影,了解椎间盘纤维环在腰椎中立、过屈、过伸三位置下的变化,并探讨其临床意义,筛选出具有手术指征的LDH病人,决定手术方式.方法:对86例LDH患者,行站立或平卧中立、过屈、过伸脊髓造影,对比分析两组动态变化.鉴别出LDB,选择性行有限椎板减压,或保留其椎间盘.结果:脊髓造影侧位像“拿破仑帽”状影,站立三位置均明显大于平卧位,差异非常显著(P＜0.01),在动态变化中平卧位者改成由中至屈曲位时,硬膜囊受压影较站立位者明显缩小,差异非常显著(P＜0.01),站立由中至伸时,压迫影较平卧位增大,差异显著(P＜0.05).其中28例,行有限椎板切除或保留其椎间盘,效果优良.结论:站立位会使LDB加重、临床症状加重,因站立过伸位使腰椎管狭窄病人症状加重.而平卧位造影时因重力负荷减轻,(拿破仑帽)影像不明显或消失,而出现假阴性.     

集值映射的 RS集逼近

本文研究了取值为 Banach空间中子集的上半连续的集值映射的 RS集逼近问题 ,给出了集值映 射用 RS集逼近的特征和唯一性结果 ,从而推广了他人的结果 .     

电流控阈技术及三值电流型 CMOS施密特电路

本文以开关信号理论为指导 ,对电流型 CM OS电路中如何实现阈值控制进行研究. 建立实现阈 值控制电路的电流传输开关运算 ,并用于指导电流型 CMOS施密特电路的开关级设计 .用 PSPICE程序 模拟证明了所设计的电路具有理想的施密特电路特性.     

改进的遥感图像多种信息熵阈值分割算法

给出了一种新的图像信息量的表述方法,提出了五种基于信息熵的科学分割遥感图像的改进方法。用MATLAB对这些算法进行了实验仿真,并进行了算法性能优化。得出了各种不同算法的最佳阈值和耗时,并对它们进行了比较和分析。实验数据表明,新算法较以往的算法在分割效果和速度上都有明显的改善和提高。     

一个传送原子纠缠态的新方案

本文提出一个通过原子和腔场相互作用传送未知原子纠缠态的新方案,并且成功概率为100%.在这个方案里,我们主要利用两个原子用来接受被传送的原子纠缠态以及一个双模腔作为量子通道.由于腔场的两个模具有不同的频率和正交极化,因此这两个模能够被区分,并且处于腔场的不同区域.原子和腔场通过J-C哈密顿量发生共振相互作用,当原子和其中一个模相互作用时,另外一个模不受影响.该方案既不需要贝尔态测量,也不需要任何操作重构纠缠初态.这个方案也可以推广到传送N个原子的纠缠态.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Noncontinuous Solitary Wave Solutions for Double sine-Gordon Equation

Using the tanh method and a variable separated ordinary difference equation method to solve the double sineGordon equation, we derive some new exact travelling wave solutions, especially a new type of noncontinuous solitary wave solutions. These noncontinuous solitary wave solutions are verified by using the conservation law theory.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.