High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S)

We report the results of an X-ray diffraction study of CdAl₂Se₄ and of Raman studies of HgAl₂Se₄ and ZnAl₂Se₄ at room temperature, and of CdAl₂S₄ and CdAl₂Se₄ at 80 K at high pressure. The ambient pressure phase of CdAl₂Se₄ is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl₂Se₄ and ZnAl₂Se₄ reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl₂S₄ and CdAl₂Se₄, which shows a very weak temperature dependence of the Raman-active phonon modes.     

Harmonic mappings of the Sierpinski gasket to the circle

Harmonic mappings from the Sierpinski gasket to the circle are described explicitly in terms of boundary values and topological data. In particular, all such mappings minimize energy within a given homotopy class. Explicit formulas are also given for the energy of the mapping and its normal derivatives at boundary points.

     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Stability of Mappings with Bounded Distortion on the Heisenberg Group

A stability theorem is proved for mappings with bounded distortion over John domains in the Heisenberg group furnished with the Carnot–Caratheodory metric.     

Barotropic Instability of the Bickley Jet at High Reynolds Numbers

We investigate the linear stability of the Bickley jet in the framework of the beta-plane approximation. Because singular inviscid neutral modes exist in the retrograde case     , it is necessary to add viscosity to interpret them. One of these modes was found in closed form by Howard and Drazin [1] . However, its critical point is at the center of the jet and it was therefore not possible for these authors to ascertain the relationship of this mode to the stability problem or to discuss how to continue the eigenfunction across the singularity.
The viscous critical layer problem associated with this singularity is considerably more difficult than the usual one (which leads to integrals of the Airy function) because     and, consequently, a second-order turning point is involved. Our analysis shows that the Howard–Drazin mode is degenerate in the domain where it is valid as a limit of the viscous problem (wavenumber  α²≤ 9/2  ), that is, it corresponds to both an odd and an even mode. This conclusion is confirmed by direct numerical solution of the Orr–Sommerfeld equation which shows, in addition, that viscosity is destabilizing along portions of the stability boundary. For a retrograde jet, instability is found to occur beyond the inviscid critical value of β, that is, in the region where the flow would be stable according to the Rayleigh–Kuo condition.     

Arithmetic on Groups of Positive Rationals

In this paper we develop a theory of unique factorization for subgroups of the positive rationals. We show that this theory is strong enough to include arithmetic progressions and the theory of genera in algebraic number fields. We establish generalizations of both Dirichlet's theorem on primes in arithmetic progressions and the theory of genera for Abelian extensions of the rationals.     

Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures

We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study the Gibbsian character of the measure νS(t) at time t and show the following: (1) For all ν and μ, νS(t) is Gibbs for small t. (2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0. (3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t. (4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t. The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios. Received: 26 April 2001 / Accepted: 10 October 2001     

Interference of spin splittings in magneto-oscillation phenomena in two-dimensional systems

The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillation phenomena in the presence of the terms of only one of these types.