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971.
972.
张东海  巩进生 《中国物理》2004,13(7):1000-1004
Results are presented for an investigation of the mean free path of projectile fragments with charge 3≤Z≤8, produced by 60 A GeV {}^{16}O in nuclear emulsion. No dependence of mean free path on the distance from the point of the fragment emission is observed and our result is consistent with the nonexistence of anomalons.  相似文献   
973.
974.
The sorption properties of stationary phases based on nematic p-substituted azoxybenzenes were studied. Correlations were revealed between the structural selectivity of mesogens, chemical nature of terminal substituents, capability for dispersion interactions and polarity of the sorbents, temperature gradient of the retention indices, and thermodynamic parameters of solution of xylene isomers in the sorbents.  相似文献   
975.
Amorphization of Al32Ge68 at normal pressure, starting from the thermobarically quenched high-pressure crystalline metallic γ-phase, was studied in a slow heating run by performing NMR field-sweep experiments. In the temperature interval from 77 to 300 K the 27Al central line exhibits a continuous broadening and a positive frequency shift. Close to 300 K rather abrupt changes were observed, where the shift changed its sign, and the line width jumped to its highest value. The discontinuous course of the phase changes indicates that the amorphization process proceeds via a sequence of intermediate metastable states, which can be ‘overheated’ in a slow heating run and consequently transform in an explosion-like manner to the final amorphous state at a well-defined temperature. The frequency shift could be decomposed into the negative second-order quadrupolar shift and the positive Knight shift. The change of the shift sign from positive to negative at 300 K reflects the vanishing tendency of the Knight shift upon heating and is compatible with the conduction-electron localization upon structure amorphization.  相似文献   
976.
浮栅ROM器件辐射效应机理分析   总被引:1,自引:0,他引:1       下载免费PDF全文
分析了浮栅ROM器件的辐射效应机理,合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和60Co γ辐射效应都是总剂量效应 . 关键词: FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">60Co γ 总剂量效应  相似文献   
977.
978.
979.
A tomographic reconstruction method based on Monte Carlo random searching guided by the information contained in the projections of radiographed objects is presented. In order to solve the optimization problem, a multiscale algorithm is proposed to reduce computation. The reconstruction is performed in a coarse-to-fine multigrid scale that initializes each resolution level with the reconstruction of the previous coarser level, which substantially improves the performance. The method was applied to a real case reconstructing the internal structure of a small metallic object with internal components, showing excellent results.  相似文献   
980.
A guest-host nanocomposite based on electroconducting polyaniline doped with 12-phosphotungstic acid and V2O5 as well as its bifunctional analog containing not more than 5 mass% nanosized platinum were obtained. A study was carried out on the structure of these nanocomposites, their redox characteristics, and electrocatalytic activity in the reduction of oxygen. These nanocomposites were found to display catalytic properties in the electrochemical reduction of oxygen, while the presence of even a slight amount of nanosized platinum in the bifunctional composite leads to a significant increase in its electrocatalytic activity. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 43, No. 5, pp. 307–314, September–October, 2007.  相似文献   
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