安装偏差对光纤布喇格光栅应变测量的影响

通过理论推导和试验分析研究了安装偏差对光纤应变测量的影响,得到安装误差所带来测量误差的计算公式.发现光纤的轴向与预定安装方向的角偏差越大,测量误差也越大.用光纤光栅进行应变测量时,必须考虑光纤的安装偏差,它直接关系到测量结果的准确性.实际测量中要尽量确保传感器安装方位的准确.     

光谱色散匀滑技术与衍射光学器件联用性能的空间频谱分析

基于空间频谱分析方法,建立了光谱色散匀滑技术(SSD: Smoothing by Spectral Dispersion)与衍射光学器件(DOE: Diffractive Optical Element)联用性能的简化分析模型,为SSD与DOE联用时,SSD参量的优化提供了理论依据.数值模拟了SSD各参量,包括脉冲时间、调制频率、位相调制系数、光栅线色散系数等对束匀滑性能的影响.模拟结果表明,SSD参量经过优化选取,且波前畸变随时间快速变化时,能获得良好的束匀滑性能.     

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by I_D-V_D characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction--diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90\du\ and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.     

光纤光热干涉气体检测技术研究进展

本文阐述光纤光热干涉气体检测的基本原理,从光纤光热相位调制的产生、动态过程、探测方法以及响应时间等方面出发,综述本研究组在光纤光热干涉气体检测方面的最新工作进展.光纤光热干涉技术具有灵敏度高、动态范围大、测量不受散射及其他损耗影响等优势,能够实现小型化、多点复用、组网及远程监测,在环境、医疗、安防等领域具有重要的应用.     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

Development of picosecond time‐resolved X‐ray absorption spectroscopy by high‐repetition‐rate laser pump/X‐ray probe at Beijing Synchrotron Radiation Facility

A new setup and commissioning of transient X‐ray absorption spectroscopy are described, based on the high‐repetition‐rate laser pump/X‐ray probe method, at the 1W2B wiggler beamline at the Beijing Synchrotron Radiation Facility. A high‐repetition‐rate and high‐power laser is incorporated into the setup with in‐house‐built avalanche photodiodes as detectors. A simple acquisition scheme was applied to obtain laser‐on and laser‐off signals simultaneously. The capability of picosecond transient X‐ray absorption spectroscopy measurement was demonstrated for a photo‐induced spin‐crossover iron complex in 6 mM solution with 155 kHz repetition rate.     

Magnetic properties of Li<Subscript>2</Subscript>RuO<Subscript>3</Subscript> as studied by NMR and LDA + DMFT calculations

We present results of the combined study of the magnetic properties of Li₂RuO₃ by means of nuclear magnetic resonance (NMR) spectroscopy and theoretical dynamical mean-field theory (LDA + DMFT) calculations. The NMR data clearly show the onset of a thermal activation process in the high temperature region, T > 560K, which is tentatively ascribed to the formation of the valence bond liquid. The LDA + DMFT calculations demonstrate that the magnetic response at these temperatures is mostly due to the xz/yz orbitals, while the xy orbitals of Ru still form molecular orbitals. Thus, Ru ions are in the orbital-selective state in the high temperature phase of Li₂RuO₃.     

Multiplicative non-Gaussian noise and additive Gaussian white noise induced transition in a piecewise nonlinear model

We study the transition problems in a piecewise nonlinear model induced by correlated multiplicative non-Gaussian noise and additive Gaussian white noise. Firstly, applying the path integral approach, the unified colored noise approximation, the analytical expression of the steady-state probability density function (SPD) is derived. Then the change regulation of the SPD is analyzed with the change of the strength and relevance of multiplicative noise and additive noise. From numerical computations we obtain some new nonlinear phenomena: the transition can be induced by the cross-correlation strength between noises, the non-Gaussian noise intensity and the Gaussian noise intensity as well as the non-Gaussian noise deviation parameter. This indicates that the effect of the non-Gaussian noise intensity on SPD is the same as that of the Gaussian noise intensity. Moreover, we also find the correlation time of the non-Gaussian noise can not induce the transition.     

Numerical simulation of atomic diffraction in the Raman-Nath regime

The theory of atomic diffraction from a classical standing wave light field in the presence of spontaneous emission in the Raman-Nath regime was developed by Tanguy et al. [6]. We describe the basis of computationally efficient methods for performing calculations in this regime and show their agreement with recent experimental results of Gould et al. [4].     

等离子体全息干涉条纹的数据处理

本文介绍了用全息干涉法诊断爆炸丝等离子体的数据处理方法。在考虑等离子体区域为轴对称的情况下,给出了由折射率计算等离子体电子密度的计算公式。在爆炸丝能量为9.6J的情况下,拍摄到了延时3μs的爆炸丝等离子体干涉图。运用计算机图象处理技术对反拍后的干涉图进行了处理,获得了较为理想的干涉图。用微机控制的线阵CCD摄像机判读了干涉条纹漂移。给出了等离子体密度随径向分布的曲线,并得到相应的等离子体密度在中心处约为10¹⁶个/cm³。