Analytical and semi-analytical solutions to flows of two immiscible Maxwell fluids between moving plates

Unsteady flows of two immiscible Maxwell fluids in a rectangular channel bounded by two moving parallel plates are studied. The fluid motion is generated by a time-dependent pressure gradient and by the translational motions of the channel walls in their planes. Analytical solutions for velocity and shear stress fields have been obtained by using the Laplace transform coupled with the finite sine-Fourier transform. These analytical solutions are new in the literature and the method developed in this paper can be generalized to unsteady flows of n-layers of immiscible fluids. By using the Laplace transform and classical method for ordinary differential equations, the second form of the Laplace transforms of velocity and shear stress are determined. For the numerical Laplace inversion, two accuracy numerical algorithms, namely the Talbot algorithm and the improved Talbot algorithm are used.     

Entangled States Based on Two Coherent States 3π/2 out of Phase

Entangled states based on two coherent states 3π/2 out of phase with each other, i.e. ｜α〉 and e^iФ｜-iα〉, as well as on a special state with a relative phase Ф = ｜α｜^2, are constructed. By analysing the amount of entanglement it is evident that entangled states based on this special state can be used as an excellent resource for quantum teleportation. It is also revealed that these entangled states possess some nonclassical features.     

Hot-electron-driven enhancement of spin-lattice coupling in Gd and Tb 4f ferromagnets observed by femtosecond x-ray magnetic circular dichroism

Femtosecond x-ray magnetic circular dichroism was used to study the time-dependent magnetic moment of 4f electrons in the ferromagnets Gd and Tb, which are known for their different spin-lattice coupling. We observe a two-step demagnetization with an ultrafast demagnetization time of 750 fs identical for both systems and slower times which differ sizeably with 40 ps for Gd and 8 ps for Tb. We conclude that spin-lattice coupling in the electronically excited state is enhanced up to 50 times compared to equilibrium.     

Effect of substitution of K ions on the structural and electrical properties of nanocrystalline MgAl2O4 spinel oxide

Potassium substituted nanosized magnesium aluminates having a nominal composition Mg_1−xK_xAl₂O₄ where x=0.0, 0.25, 0.5, 0.75, 1.0 have been synthesized by the chemical co-precipitation method. The samples have been characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), and dc electrical resistivity measurements. The XRD results reveal that the samples are spinel single phase cubic close packed crystalline materials. The calculated crystallite size ranges between 6 and 8 nm. The behaviour of the lattice constant seems to deviate from the Vegard's law. While X-ray density clearly increases, the bulk density and consequently, the percentage porosity do not exhibit a significant change on increasing the K⁺ content. The SEM micrographs suggest homogeneous distribution of the nanocrystallites in the samples. The dc electrical resistivity exhibits a typical semiconducting behaviour. Substitution of a Mg²⁺ ion by a K⁺ ion provides an extra hole to the system, which forms small polaron. Thermally activated hopping of these small polarons is believed to be the conduction mechanism in the Mg_1−xK_xAl₂O₄. The activation energy of hopping of small polarons has been calculated and found K⁺ ions content dependent.     

Novel method for laser focal point positioning on the cover slip for TPP-based microfabrication and detection of the cured structure under optical microscope

Detection of a single cured structure in two-photon photopolymerization (TPP) based microstructure fabrication requires the laser focal spot to be exactly positioned on the cover slip. This is due to the fact that if the laser focal position is not exactly on the cover slip, the structure may not stick to the cover slip and flow away with the liquid during the washing and developing stages. In this paper, we report a scheme of laser spot positioning for the implementation of TPP process and the detection of a single cured microstructure under an optical microscope. For this, a novel yet very simple approach is devised and an uncomplicated procedure is developed. Experimental results are also included to prove the worthiness of the devised method.     

Effect of annealing on contact performance and electrical properties of p-type high purity germanium single crystal

Van de Pauw Hall measurement is an effective method to characterize the properties of semiconductors, such as bulk concentration, mobility, and resistivity, all of which are used to describe the purity level in the semiconductors. However, the performance of the ohmic contacts has a direct impact on the reliability and accuracy of the results obtained from the Van de Pauw Hall measurement. In the present work, the influences of different annealing techniques on the performance of the InSn ohmic contacts have been investigated using a High Purity Germanium (HPGe) crystal sample. The results show that the preferred annealing condition is at 400 °C for 1 hour, which has provided a significant improvement of the InSn contact quality and microscopic homogenization of the impurities in the HPGe crystal. The carrier concentration, charge mobility, and resistivity of the sample annealed at 400 °C for 1 hour are 5.772×10¹⁰/cm³, 1.883×10⁴× cm²/Vs, and 5.795×10³×Ω?cm at 77 K, respectively.     

Analytical Holographic Superconductor with Backreaction Using AdS 3/CFT 2

The holographic model for a two-dimensional superconductor has been investigated by considering the three-dimensional gravity in the bulk. To find the critical temperature, we used the Sturm–Liouville variational method. Where as the same method is applied for calculating the condensation of the dual operators on the boundary. We included the back reactions on the metric by a combination of the perturbation method of the fields with respect to the small parameter and then applying the variational integrals on the resulting equations of the motion. The critical temperature has been successfully obtained on the backreaction effects, and we showed that it dropped with a rise in the backreaction of the fields, and it makes the condensation harder. We can use our analytical results to support the numerical data which was reported previously.     

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

We demonstrate a simple, low‐cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono‐crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma‐assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in‐situ Czochralski process. We show well‐behaved high‐κ /metal gate metal–oxide–semiconductor capacitors (MOSCAPs) using this film. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)