Immunization with genetically attenuated P52-deficient Plasmodium berghei sporozoites induces a long-lasting effector memory CD8+ T cell response in the liver

Background

The induction of sterile immunity and long lasting protection against malaria has been effectively achieved by immunization with sporozoites attenuated by gamma-irradiation or through deletion of genes. For mice immunized with radiation attenuated sporozoites (RAS) it has been shown that intrahepatic effector memory CD8⁺ T cells are critical for protection. Recent studies have shown that immunization with genetically attenuated parasites (GAP) in mice is also conferred by liver effector memory CD8⁺ T cells.

Findings

In this study we analysed effector memory cell responses after immunization of GAP that lack the P52 protein. We demonstrate that immunization with p52 ^-GAP sporozoites also results in a strong increase of effector memory CD8⁺ T cells, even 6 months after immunization, whereas no specific CD4⁺ effector T cells response could be detected. In addition, we show that the increase of effector memory CD8⁺ T cells is specific for the liver and not for the spleen or lymph nodes.

Conclusions

These results indicate that immunization of mice with P. berghei p52 ^-GAP results in immune responses that are comparable to those induced by RAS or GAP lacking expression of UIS3 or UIS4, with an important role implicated for intrahepatic effector memory CD8⁺ T cells. The knowledge of the mediators of protective immunity after immunization with different GAP is important for the further development of vaccines consisting of genetically attenuated sporozoites.     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

Barut-Girardello Coherent States for Nonlinear Oscillator with Position-Dependent Mass

Using ladder operators for the non-linear oscillator with position-dependent effective mass, realization of the dynamic group SU(1,1) is presented. Keeping in view the algebraic structure of the non-linear oscillator, coherent states are constructed using Barut-Girardello formalism and their basic properties are discussed. Furthermore, the statistical properties of these states are investigated by means of Mandel parameter and second order correlation function. Moreover, it is shown that in the harmonic limit, all the results obtained for the non-linear oscillator with spatially varying mass reduce to corresponding results of the linear oscillator with constant mass.     

Optical Code Generating Device Using 1×N Asymmetric Hollow Waveguide Couplers

An optical code generating device for security access system application is presented. The code generating device constructed using asymmetric hollow optical waveguide coupler design provides a unique series of output light intensities which are successively used as an optical code. The design of the waveguide is made using two major components which are asymmetric Yjunction splitter and a linear taper. Waveguiding is done using a hollow waveguide structure. Construction of higher level 1×N hollow waveguide coupler is done utilizing a basic 1×2 asymmetric waveguide coupler design together with a cascaded design scheme. Nonsequential ray tracing of the asymmetric hollow optical waveguide couplers is performed to predict the optical transmission properties of the waveguide. A representation of the code combination that can be generated from the device is obtained using combinatory number theory.     

溶胶凝胶合成锰掺杂ZnO的室温磁性行为

通过溶胶凝胶自燃法合成锰掺杂氧化锌纳米晶体, 研究了Mn掺杂ZnO稀磁半导体(简称DMS)的性质．X射线衍射光谱表明,锰掺杂氧化锌保留纤锌矿型状氧化锌六角晶体结构．采用能量色散X射线能谱和扫描电子显微镜分别对成分和形态进行研究．温度依赖的电阻率显示了DMS的半导体材料行为．振动样品磁强计测定的室温磁性行为,揭示了锰掺杂氧化锌的铁磁性和反磁性特性.     

化学合成的钯改性的NiFe2O4纳米颗粒的结构和磁性

采用溶胶-凝胶自动燃烧方法合成了镍铁-钯复合材料NiFe₂O₄-Pd的磁性纳米颗粒. 样品在800 ℃烧结6 h生成结晶相. X射线衍射证实样品呈尖晶石结构. 利用场发射扫描电子显微镜研究结构形态和纳米颗粒的大小. 饱和磁化强度在100和300 K时,随着钯含量增加达5%降低,但加入10%Pd时磁化强度突然上升.     

The generation,detection and measurement of laser-induced carbon plasma ions and their implantation effects on brass substrate

The generation, detection and measurement of laser-induced carbon plasma ions and their implantation effects on brass substrate have been investigated. Thomson parabola technique was employed to measure the energy and flux of carbon ions. The magnetic field of strength 80?mT was applied on the graphite plasma plume to provide an appropriate trajectory to the generated ions. The energy of carbon ions is 678?KeV for laser fluence of 5.1?J/cm² which was kept constant for all exposures. The flux of ions varies from 32?×?10¹¹ to 72?×?10¹⁴?ions/cm² for varying numbers of laser pulses from 3000 to 12,000. In order to explore the ion irradiation effects on brass, four brass substrates were irradiated by carbon ions of different flux. Scanning electron microscope (SEM) and X-ray diffractometer (XRD) are used to analyze the surface morphology and crystallographic structure of ion-implanted brass, respectively. SEM analysis reveals the formation and growth of nano-/micro-sized cavities, pores and pits for the various ion flux for varying numbers of laser pulses from 3000 to 12,000. By increasing ion flux by increasing the number of pulses up to 9000 shots, the dendritic structures initiate to grow along with cavities and pores. At the maximum ion flux for 12,000 shots, the unequiaxed dendritic structures become distinct and the distance between the dendrites is decreased, whereas cavities, pores and pits are completely finished. The XRD analysis reveals that a new phase of ZnC (0012) is formed in the brass substrate after ion implantation. Universal tensile testing machine and Vickers microhardness tester are used to explore the yield stress, ultimate tensile strength and microhardness of ion-implanted brass substrate. The mechanical properties monotonically increase by increasing the ion flux. Variations in mechanical properties are correlated with surface and structural modifications of brass.     

Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser

Transient characteristics of the InGaP–GaAs–InGaAs (quantum well)-GaAs transistor laser are studied. Rate equations are numerically solved to obtain the response of current density and photon density. Expression of resonance frequency $f_{r}$ is obtained by solving the rate equations analytically. It has been found that the $f_{r}$ increases with decreasing spontaneous carrier lifetime and with increasing value of the bias current density.     

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent dark current–voltage (I–V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room temperature. The current–voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine (VOPc) was extracted from the I–V characteristics in the SCLC region and was found approximately 15.5 × 10⁻³ cm² V⁻¹ s⁻¹. The effective barrier height, Ф_B, was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions and at temperatures ranging from 300 to 363 K.