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Tao Xu A. Yu Nikiforov Ryan France Christos Thomidis Adrian Williams T. D. Moustakas 《physica status solidi (a)》2007,204(6):2098-2102
Self‐assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma‐assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 1010 cm–2, respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to Quantum Confined Stark effect. Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440, 560 and 640 nm, respectively, were grown and fabricated. The electroluminescence peak positions of both the green and red InGaN MQD LEDs are shown to be more blue‐shifted with increasing injection current than that of the blue InGaN/GaN MQW LEDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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S Kawatkar D Moustakas M Miller D Joseph-McCarthy 《Journal of computer-aided molecular design》2012,26(8):921-934
An NMR fragment screening dataset with known binders and decoys was used to evaluate the ability of docking and re-scoring methods to identify fragment binders. Re-scoring docked poses using the Molecular Mechanics Poisson-Boltzmann Surface Area (MM-PBSA) implicit solvent model identifies additional active fragments relative to either docking or random fragment screening alone. Early enrichment, which is clearly most important in practice for selecting relatively small sets of compounds for experimental testing, is improved by MM-PBSA re-scoring. In addition, the value in MM-PBSA re-scoring of docked poses for virtual screening may be in lessening the effect of the variation in the protein complex structure used. 相似文献
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M. Katsikini E. C. Paloura J. Antonopoulos P. Bressler T. D. Moustakas 《Journal of Crystal Growth》2001,230(3-4):405-409
It is demonstrated that the NEXAFS spectra are a “fingerprint” of the symmetry and the composition of the binary nitrides GaN, AlN and InN, as well as of their ternary alloys In0.16Ga0.84N and AlyGa1−yN. From the angular dependence of the N-K-edge NEXAFS spectra, the hexagonal symmetry of the under study compounds is deduced and the (px, py) or pz character of the final state is identified. The energy position of the absorption edge (Eabs) of the binary compounds GaN, AlN and InN is found to red-shift linearly with the atomic number of the cation. The Eabs of the AlyGa1−yN alloys takes values in between those corresponding to the parent compounds AlN and GaN. Contrary to that, the Eabs of In0.16Ga0.84N is red-shifted relative to that of GaN and InN, probably due to ordering and/or phase separation phenomena. The EXAFS analysis results reveal that the first nearest-neighbour shell around the N atom, which consists of Ga atoms, is distorted in both GaN and AlxGa1−xN for x<0.5. 相似文献
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L. Plucinski L. Colakerol Yufeng Zhang K.E. Smith A.A. Zakharov I. Grzegory S. Porowski T.D. Moustakas 《Solid State Communications》2005,136(4):191-195
Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d8 state. The correlation energies and binding energies for the satellite multiplet have been measured for the satellite and related Auger transitions. The satellite multiplet contains additional constant binding energy features not observed in previous studies of other Ga compounds. The present results are compared with those for GaP and GaAs. 相似文献
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We consider in this paper the system properties of the optical metal-insulator (tunnel)-silicon-thyristor (MIST) device when operating as a threshold transducer. Measured values of switching speed, noise performance and sensitivity for devices operated in the monostable mode are reported. Improvements in these parameter values are also predicted for operation in the bistable mode. For our non-optimized experimental devices, operation at 2 Mbit s–1 with a–36 dBm receiver sensitivity is shown to be possible, thereby illustrating the suitability of the MIST in its present form for data bus applications. Areas for further improvement and development are outlined. 相似文献
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