Laser bias effect on the receiver sensitivity of passive fibre optic star bus networks

We examine in this paper the reduction in receiver sensitivity in passive fibre optic star bus networks due to the laser bias power transmitted by every terminal. Both transimpedance and high impedance preamplifier configurations using PIN and avalanche photodiodes are considered. The penalty in receiver sensitivity is examined as a function of bit rate, number of terminals, amplifier noise and the ratio of the launched laser bias power to average launched signal power. For PIN receivers the penalty has a maximum at low bit rates and falls off rapidly on either side of the maximum. In an example quoted in the paper the PIN receiver sensitivity penalty for networks with less than 50 terminals is less than 1 dB for all bit rates. The penalty for APD receivers increases with bit rate, and, in a further example, is shown to be less than 1 dB for networks with less than 50 terminals operating at bit rates lower than approximately 20 Mbit s^?1. Techniques for reducing the penalty to negligible levels are also examined.     

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Electron accumulation states in InN have been measured using high resolution angle-resolved photoemission spectroscopy (ARPES). The electrons in the accumulation layer have been discovered to reside in quantum well states. ARPES was also used to measure the Fermi surface of these quantum well states, as well as their constant binding energy contours below the Fermi level E(F). The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation. This is the first unambiguous observation that electrons in the InN accumulation layer are quantized and the first time the Fermi surface associated with such states has been measured.     

Changes in Light Energy Utilization in Photosystem II and Reactive Oxygen Species Generation in Potato Leaves by the Pinworm Tuta absoluta

We evaluated photosystem II (PSII) functionality in potato plants (Solanum tuberosum L.) before and after a 15 min feeding by the leaf miner Tuta absoluta using chlorophyll a fluorescence imaging analysis combined with reactive oxygen species (ROS) detection. Fifteen minutes after feeding, we observed at the feeding zone and at the whole leaf a decrease in the effective quantum yield of photosystem II (PSII) photochemistry (Φ_PSII). While at the feeding zone the quantum yield of regulated non-photochemical energy loss in PSII (Φ_NPQ) did not change, at the whole leaf level there was a significant increase. As a result, at the feeding zone a significant increase in the quantum yield of non-regulated energy loss in PSII (Φ_NO) occurred, but there was no change at the whole leaf level compared to that before feeding, indicating no change in singlet oxygen (¹O₂) formation. The decreased Φ_PSII after feeding was due to a decreased fraction of open reaction centers (q_p), since the efficiency of open PSII reaction centers to utilize the light energy (Fv′/Fm′) did not differ before and after feeding. The decreased fraction of open reaction centers resulted in increased excess excitation energy (EXC) at the feeding zone and at the whole leaf level, while hydrogen peroxide (H₂O₂) production was detected only at the feeding zone. Although the whole leaf PSII efficiency decreased compared to that before feeding, the maximum efficiency of PSII photochemistry (Fv/Fm), and the efficiency of the water-splitting complex on the donor side of PSII (Fv/Fo), did not differ to that before feeding, thus they cannot be considered as sensitive parameters to monitor biotic stress effects. Chlorophyll fluorescence imaging analysis proved to be a good indicator to monitor even short-term impacts of insect herbivory on photosynthetic function, and among the studied parameters, the reduction status of the plastoquinone pool (q_p) was the most sensitive and suitable indicator to probe photosynthetic function under biotic stress.     

Preparation of highly photoconductive amorphous silicon by rf sputtering

The photoconductivity of hydrogenated rf sputtered amorphous Si has been determined as a function of the partial pressure of hydrogen in the sputtering gas and of deposition temperatures up to 450°C. The data can be used to choose conditions for preparing material with large photoresponse and small defect state density.     

Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN

Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d⁸ state. The correlation energies and binding energies for the satellite multiplet have been measured for the satellite and related Auger transitions. The satellite multiplet contains additional constant binding energy features not observed in previous studies of other Ga compounds. The present results are compared with those for GaP and GaAs.     

Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements

It is demonstrated that the NEXAFS spectra are a “fingerprint” of the symmetry and the composition of the binary nitrides GaN, AlN and InN, as well as of their ternary alloys In_0.16Ga_0.84N and Al_yGa_1−yN. From the angular dependence of the N-K-edge NEXAFS spectra, the hexagonal symmetry of the under study compounds is deduced and the (p_x, p_y) or p_z character of the final state is identified. The energy position of the absorption edge (E_abs) of the binary compounds GaN, AlN and InN is found to red-shift linearly with the atomic number of the cation. The E_abs of the Al_yGa_1−yN alloys takes values in between those corresponding to the parent compounds AlN and GaN. Contrary to that, the E_abs of In_0.16Ga_0.84N is red-shifted relative to that of GaN and InN, probably due to ordering and/or phase separation phenomena. The EXAFS analysis results reveal that the first nearest-neighbour shell around the N atom, which consists of Ga atoms, is distorted in both GaN and Al_xGa_1−xN for x<0.5.